• 한국결정성장학회지
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• 제23권4호
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• pp.161-166
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• 2013

실리콘 기판 위에 GaN를 성장하기 위해서 AlN 완충층을 사용해 왔다. 그러나 AlN은 아직까지 high doping이 쉽지 않기 때문에, 이로 인해 AlN를 전자소자나 광소자 제작을 위한 완충층으로 이용하는 경우 직렬 저항의 증가라는 문제가 발생할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위해 AlN 완충층 대신에 금속 완충층을 사용하여 실리콘 기판 위에 GaN 박막 성장실험을 수행하였다. Al, Ti, Cr 그리고 Au 등을 금속 완충층으로 사용하여 실리콘 기판 위에 GaN 층을 성장하였다. 성장된 GaN 박막의 표면 특성을 분석하기 위해 광학현미경과 SEM을 사용하였고, 결정성과 광학적 특성을 평가하기 위하여 PL과 XRD 분석을 실시하였으며 AlN 완충층을 사용한 경우와 금속 완충층을 사용한 경우의 저항 차이를 확인하기 위하여 전류-전압 특성을 측정하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• 한국분말재료학회지
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• 제26권1호
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• pp.49-57
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• 2019

Layered $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode materials single- and dual-doped by the rare-earth elements Ce and Nd are successfully fabricated by using a coprecipitation-assisted solid-phase method. For comparison purposes, non-doping pristine $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode material is also prepared using the same method. The crystal structure, morphology, and electrochemical performances are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, and electrochemical techniques. The XRD data demonstrates that all prepared samples maintain a typical ${\alpha}-NaFeO_2$-layered structure with the R-3m space group, and that the doped samples with Ce and/or Nd have lower cation mixing than that of pristine samples without doping. The results of SEM and EDS show that doped elements are uniformly distributed in all samples. The electrochemical performances of all doped samples are better than those of pristine samples without doping. In addition, the Ce/Nd dual-doped cathode material shows the best cycling performance and the least capacity loss. At a 10 C-rate, the electrodes of Ce/Nd dual-doped cathode material exhibit good capacity retention of 72.7, 58.5, and 45.2% after 100, 200, and 300 cycles, respectively, compared to those of pristine samples without doping (24.4, 11.1, and 8.0%).

• Current Photovoltaic Research
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• 제12권2호
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

• 세라미스트
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• 제21권2호
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• pp.49-58
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• 2018

Metal oxide based materials have been widely used to fields of electrochemical applications. Recently, various type of defects from microstructures of metal oxides and their nanocomposites have been raised as the important material design factors for realizing highly improved electrochemical properties. Previous experimental and theoretical works have suggested that controlling the reaction activity and kinetics of the key electrochemical reactions by activated interfaces originating from the defect sites can play an important role in achieving the robust energy storage and conversion. Therefore, this paper focuses on the role of defect-controlled metal oxide materials such as doping, edge-sites, grain boundaries and nano-sized pores for the high performances in energy storage devices and electrocatalysts. The research approaches demonstrated here could offer a possible route to obtain noble ideas for designing the metal oxide materials for the energy storage and conversion applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1974-1976
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• 2005

The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.146.2-146
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• 2002

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.79.2-79.2
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• 2008

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2018년도 추계학술논문요약집
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• pp.584-585
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• 2018