• Transactions on Electrical and Electronic Materials
• /
• 제17권2호
• /
• pp.92-97
• /
• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Transactions on Electrical and Electronic Materials
• /
• 제17권1호
• /
• pp.7-12
• /
• 2016

This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of −90.9 dB (compared to − 58 dB in conventional designs ), the insertion of −0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design ) making the switch suitable for wide band applications.

• 한국화재소방학회논문지
• /
• 제24권5호
• /
• pp.136-141
• /
• 2010

본 연구에서는 옥내 조명 설비의 전원을 ON/OFF 하기 위해 사용되는 저압용 스위치의 구조 및 발열 메커니즘을 제시하고, 에너지원의 종류에 따라 스위치의 고정금구 및 가동 접점 등의 소손패턴을 제시함으로써 향후 예상되는 PL 분쟁의 판단 근거를 확보하는데 있다. 스위치에 인가된 일반 화염은 한국산업규격(KS)의 난연성 시험 방법을 적용하였다. 또한 스위치에 공급된 전류는 대전류공급장치(PCITS)를 이용하였다. 실험이 진행될 때 주위의 온도는 $22{\pm}2^{\circ}C$, 습도는 40~60%를 유지시켰다. 스위치의 발열은 배선과 클립의 접속 불량, 가동 접점의 절연 열화 및 접촉 불량 등에 의해서 생성되는 것으로 판단된다. 일반 화염에 의해 소손된 스위치는 표면이 균일하게 탄화되었으며, 화원을 제거하면 자연 소화되었다. 일반화염에 의해 탄화된 스위치를 분해한 결과 고정금구 및 가동 접점 등은 비교적 양호한 형태를 보였으나 외함, 클립 지지대, 가동 접점, 표시램프 등에서 탄화 및 변색을 확인할 수 있었다. 과전류에 의해 소손된 스위치는 배선을 연결하는 클립 및 클립 지지대 등은 소손의 흔적이 거의 없으나 고정금구, 가동 접점, 표시 램프 등은 심하게 탄화되었다. 즉 접촉 저항이 큰 부분에서 집중적으로 소손되었고 내부에서 외부로 탄화가 진행되는 패턴을 나타냈다. 따라서 소손된 스위치의 탄화 패턴 및 금속 금구류의 특성을 분석하면 최초의 에너지원 판정이 가능하다.

• 한국기계가공학회지
• /
• 제19권12호
• /
• pp.80-86
• /
• 2020

With the exception of welding activities, it is forbidden to use electricity in shipyards, owing to safety concerns such as the possibility of fire, explosions, and short circuits. In this paper, an automatic chamfering machine using pneumatics is proposed for use in such environments. Customers specify their requirements and the machine derives the corresponding theoretical design conditions. The proposed machine was used to perform 3D modeling, and its suitability and performance were confirmed via cutting experiments of the manufactured device. Two types of sensors may be used in this system: contact and non-contact. In the case of the contact type, an end-stop switch that can recognize the end of the material is installed, and when the machine reaches the end of the material, the end-stop switch is operated to cut off the air pressure. In the non-contact type, four sensors were used: photonic, ultrasonic, metal detection, and encoder. The use of the four sensors was repeated 30 times, and the average error determined. Thus, the optimum sensor was identified.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
• /
• pp.2395-2397
• /
• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.1109-1112
• /
• 2003

본 연구는 switching mode 의 Power NMOSFET failure mode 에 관하여 분석하고 원인을 규명하였다. 분석된 power NMOSFET은 30V급이며, vender A의 상용화 제품이다. 발생한 failure mode는 power switch 회로에서 특정 ID 를 detect 하지 못하는 mode 였다. 측정결과 source voltage 가 저하되었으며, power NMOSFET DC 동작특성 분석 결과 Vgs 변화에 따라 Id 가 저하되었다. Fail 된 power MOSFET 특성값 reference는 동일 LOT의 양품을 선정하였다. De-cap후 Inversion 과 Accumulation mode 별로 Photoemission spectrum analyzer(PSA) 분석 방법을 적용하였다. 결과 accumulation mode 에서 intensity가 감소하였으며, forward diode mode에서 국소적으로 변화하는 영역이 검출되었다. SEM 분석결과 gate metal 과 source metal 의 micro-contact 이 이루어져 있었다. 이 경우 gate metal 과 source metal 사이 close loop 를 형성하여 gate charge량을 변화시켜 power NMOSFET의 출력을 저하하는 failure mode가 발생됨을 분석할 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제29권8호
• /
• pp.461-465
• /
• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.