• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10b
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• pp.179-188
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• 2003

The objective of our study is to investigate the micro fabric ability by conventional metal forming processes. In the present investigation, micro hole punching was studied. We tried to control punching process at the micro level and scaled down the standard blanking condition for $25{\mu}m$ hole fabrication. To accommodate this, tungsten carbide tooling sets and micro punching press were carefully designed and assembled meeting accuracy requirements for $25{\mu}m$ hole punching. With our developments, 100, 50, and $25{\mu}m$ holes were successfully made on metal foils such as brass and stainless steel of 100, 50, and $25{\mu}m$ in thickness, respectively, and hole sizes and shapes were measured and analyzed to investigate fabrication accuracy. Shear behavior during micro punching was also discussed. Our study showed that the conventional punching process could produce high quality holes down to $25{\mu}m$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.914-917
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• 2000

Application of ceramics, carbide, ferrite has grown considerably due to significant improvement in their mechanical properties such as light weight, chemical stability , super wear resistance and electronical. Despite these character, the me of advanced material has not increased because of poor machinability. The method of using of metal bond wheel was proposed. But it is difficult that metal bond wheel can be dressed. Recently, the technology of in-process electrolytic dressing is developed to solve this problem. This method need wheel for electrolytic dressing, power supply and electrolyte. But development of wheel for electrolytic dressing is the most need. The aim of this study is development of wheel for electrolytic and appraisement of CIB-diamond lapping wheel

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.858-861
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• 2000

Application of ceramics, carbide, ferrite has grown considerably due to significant improvement in their mechanical properties such as light weight chemical stability super wear resistance and electronical. Despite these character, the use of hi-tech material has not increased because of poor machinability. The method of using of metal bond wheel was proposed. But it is difficult that metal bond wheel can be dressed. Recently, the technology of in-process electrolytic dressing is developed to solve this problem. This method need wheel for electrolytic dressing, power supply and electrolyte. But development of wheel for electrolytic dressing is the most need. The aim of this study is development of wheel for electrolytic and appraisement of CIB-diamond lapping wheel

• Journal of the Korean Society for Heat Treatment
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• v.7 no.1
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• pp.35-43
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• 1994

For the purpose of studying the change of mechanical properties of weld parts, shielded metal are welding, one-pole and two-pole submerged arc welding were accomplished weldability on $60kg/mm^2$ quenched and tempered high strength steel. Charpy impact values of the weld metal in welded parts by SMAW and SAW were lower than those of the heat affected zone and increased in order of bond, coarsened, refined and carbon spheroidized regions in the heat affected zone. Grain size of prior austenite or M-A constituent did not significantly affect toughness of welded parts, but precipitated carbide films which forms at the grain boundaries or within matrix and volume fraction of pearilte were most important factor for toughness.

• Journal of Mechanical Science and Technology
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• v.15 no.1
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• pp.26-34
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• 2001

Most research to date concerning the cryogenic toughness of austenitic stainless steels has concentrated on the base metal and weld metal in weldments. The most severe problem faced on the conventional austenitic stainless steel is the thermal aging degradation such as sensitization and carbide induced embrittlement. In this paper, we investigate the cryogenic toughness degradation which can be occurred for austenitic stainless in welding. The test materials are austenitic stainless JN1, JJ1 and JK2 steels, which are materials recently developed for use in nuclear fusion apparatus at cryogenic temperature. The small punch(SP) test was conducted to detect similar isothermally aging condition with material degradation occurred in service welding. The single-specimen unloading compliance method was used to determine toughness degradation caused by thermal aging for austenitic stainless steels. In addition, we have investigated size effect on fracture toughness by using 20% side-grooved 0.5TCT specimens.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.280-284
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• 2011

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

• Journal of Powder Materials
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• v.31 no.1
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• pp.57-76
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• 2024

Recent advancements in electronic devices and wireless communication technologies, particularly the rise of 5G, have raised concerns about the escalating electromagnetic pollution and its potential adverse impacts on human health and electronics. As a result, the demand for effective electromagnetic interference (EMI) shielding materials has grown significantly. Traditional materials face limitations in providing optimal solutions owing to inadequacy and low performance due to small thickness. MXene-based composite materials have emerged as promising candidates in this context owing to their exceptional electrical properties, high conductivity, and superior EMI shielding efficiency across a broad frequency range. This review examines the recent developments and advantages of MXene-based composite materials in EMI shielding applications, emphasizing their potential to address the challenges posed by electromagnetic pollution and to foster advancements in modern electronics systems and vital technologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.