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http://dx.doi.org/10.4313/JKEM.2011.24.4.280

The Effect of Catalytic Metal Work Functions and Interface States on the High Temperature SiC-based Gas Sensors  

Jung, Ji-Chul (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.4, 2011 , pp. 280-284 More about this Journal
Abstract
Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.
Keywords
Interface states; Schottky diode; SiC;
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1 A. Lloyd Spetz, P. Tobias, A. Baranzahi, P. Martensson, and I. Lundstrom, IEEE Trans. on Electron Devices, 46, 3 (1999).
2 S. K. Lee, E. K. Suh, N. K. Cho, H. D. Park, L. Uneus, and A. Lloyd Spetz, J. Solid State Electr, 49, 1297 (2005).   DOI
3 J. Yu, M. Shafiei, W. Wlodarski, Y. X. Li, and K. Kalantarzadeh, J. Phys. D, 43, 025103 (2010).   DOI
4 S. Kandasamy, W. Wlodarski, and A. Holland, Appl. Phys. Lett., 90, 064103 (2007).   DOI
5 A. Lloyd Spetz, L. Uneus, H. Svenningstorp, P. Tobias, L.-G. Ekedahl, O. Larsson, A. Go¨ras, S. Savage, C. Harris, P. Martensson, R. Wigren, P. Salomonsson, B. Haggendahl, P. Ljung, M. Mattsson, and I. Lundstrom, Solid State Phys., 185, 15 (2001).   DOI