• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.8
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• pp.415-419
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• 2004

A pulse power supply using IGBTs and MPC (magnetic pulse compression) circuit was developed for a metal vapor laser. The life time of the pulse power supply is expected to be much longer than that of a vacuum tube or thyratron type pulse power supply. A series-connected IGBT array generated a long pulse of its pulse width 2 ${\mu}\textrm{s}$ md then it was compressed to less than 100 ns by a three stage MPC circuit. This pulse power supply was applied to a laser plasma tube of 10 mm inner diameter and 0.5 m discharge length. and successfully operated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.568-572
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• 2003

A longitudinal discharge heated copper vapor laser with internal diameter 28 mm and discharge length 1.3 m has been constructed and tested. At the discharging voltage 15.2 kV, pulse repetition rate 10 kHz, buffer gas pressure 40 mbar, and internal temperature of the laser plasma tube $1520^{\circ}C$, it delivers more than 30 W average laser outputs.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.59-64
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• 2004

A study on the semiconductor laser-based atomic absorption spectroscopy was performed for monitoring physical vapor deposition process. Gadolinium metal was vaporized with a high evaporation rate by electron beam heating. Real-time atomic absorption spectra were measured by using tunable semiconductor laser beam at 770-794 nm (center wavelength of 780 nm) and its second harmonic at 388-396 nm. Atomic densities of metal vapor can be calculated from the absorption spectra measured. We plot the atomic densities as a function of the electron beam power and compare with the evaporation rates measured by quartz crystal monitor. We demonstrate that the semiconductor laser-based spectroscopic system developed in this study can be applied to monitor the physical vapor deposition process for other metals such as titanium.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.190-197
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• 2005

A reliable and compact pulse power supply using a thyratron and a magnetic pulse compression (MPC) circuit was developed for a metal vapor laser. The life time of the pulse power supply is expected to be much longer than that of a conventional thyratron-discharge type pulse power supply. A thyratron generated a long pulse of its conduction pulse width 500 ns and then it was compressed to less than 80 ns of its output voltage rise time by a three stage MPC circuit. This pulse power supply was applied to a laser plasma tube of 30 mm inner diameter and 1.5 m discharge length. It was operated several hundreds hours without any troubles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.13-22
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• 2017

In laser full penetration welding process, full penetration hole(FPH) is formed as a result of force balance between the vapor pressure and the surface tension of the surrounding molten metal. In this work, a three-dimensional numerical model based on a conserved-mass level-set method is developed to simulate the transport phenomena during laser full penetration welding process, including full penetration keyhole dynamics. Ray trancing model is applied to simulate multi-reflection phenomena in the keyhole wall. The ghost fluid method and continuum method are used to deal with liquid/vapor interface and solid/liquid interface. The effects of processing parameters including laser power and scanning speed on the resultant full penetration hole diameter, laser energy distribution and energy absorption efficiency are studied. The model is validated against experimental results. The diameter of full penetration hole calculated by the simulation model agrees well with the coaxial images captured during laser welding of thin stainless steel plates. Numerical simulation results show that increase of laser power and decrease of welding speed can enlarge the full penetration hole, which decreases laser energy efficiency.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.165-173
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• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1210-1212
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• 1994

An amplitude modulation technique for increasing the laser penetration efficiency for metals has been studied. By chopping electro-optically Nd:YAG laser pulse, the threshold energy for reliable hole drilling was decreased significantly and the penetration depth was increased. It was observed that the effect of chopping was optimal at 8-12 kHz with 60% duty cycle. It is believed that this improvement is due to an increase in the vapor recoil pressure and reduced plasma screening.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.47-56
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• 1993

Practical efficiencies of pulsed gas discharge lasers utilizing vaporized Au, Ba, Cu, Fe, Mn, Pb, TI atoms are numerically optimized for a discharge pulse of 30 ns rise time at 5 kHz pulse repetition rate. Calculated optimum operating temperatures are close to the values at which the vapor pressure of each atom is about 1 Torr and are in good agreement with experimental values reported elasewhere. The optimum charging voltage was about 4 kV for all atomic vapor lasers except the TI laser. The calculated maximum efficiencies that have been discussed for possible limiting efficiencies for each laser were considerably higher than the reported experimental values. Especially, they were as high as 6.8% for Mn laser and 15% for Ba laser that were comparable to the 8.5% of copper vapor laser, from which considerably higher efficiencies can be expected for these two lasers experimentally. But, the present calculation shows a very low efficiency of 0.058% and requires an exceptional operating condition for the TI laser.