• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2002.11a
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• pp.221-232
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• 2002

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.13-20
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• 2018

Gas sensors based on metal oxide semiconductors are used in numerous applications including monitoring indoor air quality and detecting harmful substances like volatile organic compounds. Nanostructures, for example, nanoparticles, nanotubes, nanodomes, and nanofibers have been widely utilized to improve gas sensing properties of metal oxide semiconductors, and this increases the effective surface area, resulting in participation of more target gas molecules in the surface reaction. In the recent times, 1-dimensional (1D) metal oxide nanostructures fabricated using anodic oxidation have attracted great attention due to their high surface-to-volume ratio with large-area uniformity, reproducibility, and capability of synthesis under ambient air and pressure, leading to cost-effectiveness. Here, we provide a brief overview of 1D metal oxide nanostructures fabricated by anodic oxidation and their gas sensing properties. In addition, recent progress on thin film-based anodic oxidation for application in gas sensors is introduced.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.5
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• pp.1183-1188
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• 2011

The novel metal position detection method is proposed where conventional techniques, in high temperature, moisture and particle environment, are not able to be applied. It is known that electronic devices, utilizing microwave, ultrasonic or optical technique, are hard to apply for sensing application where temperature is exceeding above 300 degree centigrade. Metal position detection technique, which was consisted with passive elements facing hot sensing surface, utilizing electromagnetic wave was investigated, and the metal detection sensitivity was measured by varying sensor frequency and sensing distance. Measurement result in laboratory test set-up showed position measurement resolution up to 1mm, when distance between two sensing elements were 500mm, and possibility to measure position of hot metal sheet having very high surface temperature.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.365-368
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• 2020

As a green and abundant source of energy, H2 has attracted the attention of researchers for use in different applications. Nevertheless, it is highly flammable, and because of its significantly small size, extreme attention is needed to detect its leakage. In this review, we discuss different effects of noble metals on the H2 gas response and performance of metal oxide-based gas sensors. In this regard, we discuss the effects of noble metals, in combination with metal oxides, on H2 gas detection. The catalytic activity towards H2 gas and the formation of heterojunctions with metal oxides are the main contributions of noble metals to the sensing improvement of H2 gas sensors. Furthermore, in the special case of Pd and somewhat Pt, the formation of PdHx and PtHx also affects the H2 sensing performance. This review paper provides useful information for researchers working in the field of H2 gas detection.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.865-871
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• 2015

This study was conducted in order to develop a finger exoskeleton system using ionic polymer metal composites (IPMCs) as the actuator and sensor in a hybrid structure. To use the IPMC as an actuator producing large force, a first order transfer function was obtained using results from a block force for DC excitation that applied to two IPMCs of 20mm-width, 50mm-length, and 2.4mm thickness together. After which the validation of 200gf control with anti-windup PI controller was confirmed. A 5mm-width, 50mm-length, 0.6mm-thickness of IPMC was also modeled as a sensor for tip displacement. As a result, the IPMC sensor could been utilized as a trigger role for the actuator. Finally, an IPMC sensor and actuator were installed on the joint of a single DOF exoskeleton in the hybrid structure, and test for the control of 40gf of block force and predefined sequence of motion was performed.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.137-143
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• 2005

Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• Korean Journal of Food Science and Technology
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• v.30 no.2
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• pp.356-362
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• 1998

The study is to predict fermentation time of Korean style soybean paste by portable electronic nose that has six metal oxide sensors. Korean style soybean paste using Aspergillus oryzae was fermented at $15^{\circ}C,\;20^{\circ}C\;and\;25^{\circ}C$. The changes of sensitivity by electronic nose, amino nitrogen and reducing sugar were observed during fermentation. Sensitivities of six metal oxide sensor were decreased with increase of fermentation time while amino nitrogen was increased. Sensor #3 and #4 showed good correlation between sensitivities of the sensors and fermentation time $(r^2=0.71{\sim}0.95)$. And the good correlation between sensitivity by electronic nose and the produced amino nitrogen was shown until soybean paste was fermented. Portable electronic nose using metal oxide sensor (#3 and #4) could predict fermentation time of Korean style soybean paste.