• Journal of the Speleological Society of Korea
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• no.75
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• pp.49-54
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• 2006

Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.348-348
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• 2011

We present the interfacial electronic structures of electrodeposited Cu and Fe on bare and 1,4-phenylene diisocyanide (PDI)-functionalized Au nanoisland templates (NITs), and Au and Ag nanoparticles on transition metal oxide supports. Our discussion is based on the depth-profiling X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3183-3184
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• 2013

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.157-159
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• 2009

LED BLU(Back Light Unit), based on MCPCB(Metal Core Printed Circuit Board) with anodizing oxide dielectric layer and improved thermal dissipation property, are presented. Reflecting cups were also formed on the surface of the MCPCB such that optical coupling between neighboring chips were minimized for improving the photon extraction efficiency. LED chips were directly attached on the MCPCB by using the COB (Chip On Board) scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.9-16
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• 2000

A survey over the role of sol-gel processing and metal alkoxides in the thin film preparation is given. The basic chemistry of the sol-gel process is complex due to the different reactivities of the network forming and the wide variety of reaction parameters. Despite the important progress in the investigations of the mechanisms of thin film formation, a direct relation of reaction parameters to functional oxide properties is still very difficult.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.471-475
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• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.25-37
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• 2020

In this study, hybridization of graphene oxide and metal was carried out by the functional groups containing oxygen and thermal treatment for reduction in order to enhance the electrical conductivity and magnetic properties of graphene materials. Graphene-metal hybrid materials were synthesized using the oxygen-containing functional groups (-OH, -COOH and so on) on the surface of graphene oxide by replacing them with metal ions via ion exchange method as well as thermal reduction. The metals used in this study were Fe, Ag, Ni, Zn, and Fe/Ag, and it was confirmed that metal particles of uniform size were well dispersed on the graphene surface through SEM, TEM, and EDS. All of the metal particles on the graphene surface had an oxide-crystalline structure. To check the electrical properties, sheet resistance of the rGO-metal hybrid sample was measured on the PET film made by the dip-coating, and the specific resistance was calculated by measuring the thickness of the specimen through SEM. As a result, the specific resistance was in the range of 2.14×10-5 and 3.5×10-3 ohm/cm.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.2-61
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• 2003