• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.28-28
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• 1994

• 공업화학
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• 제26권2호
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• pp.128-131
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• 2015

친환경적 조건에서의 니트릴의 수화 반응은 아미드를 생산하기 위한 가장 경제적이고 매력적인 방법이다. 고체 금속 산화물과 지지체를 이용한 전이 금속 촉매 시스템은 이러한 니트릴 수화 반응을 보다 향상시키기 위한 의미 있는 연구로써 수행되어져 왔다. 이들 촉매들의 중요한 특징은 방향족, 지방족, 이종 원자형, 지방족 고리형 등의 니트릴들을 포함하는 넓은 범위의 다양한 기질들에 적용된다는 것이다. 또한 이들은 높은 촉매적 활성을 유지하면서 여러 번의 재사용성이 가능하고 반응 후 그 혼합물로부터 분리가 용이하다는 장점들을 갖는다. 이 리뷰를 통하여 니트릴 수화반응을 통한 아미드 합성에 적용되는 금속 산화물과 지지체를 가진 금속 촉매들에 대해 알아본다.

• Nuclear Engineering and Technology
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• 제47권3호
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• pp.227-239
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• 2015

The thermal, mechanical, and neutronic performance of the metal alloy fast reactor fuel design complements the safety advantages of the liquid metal cooling and the pool-type primary system. Together, these features provide large safety margins in both normal operating modes and for a wide range of postulated accidents. In particular, they maximize the measures of safety associated with inherent reactor response to unprotected, doublefault accidents, and to minimize risk to the public and plant investment. High thermal conductivity and high gap conductance play the most significant role in safety advantages of the metallic fuel, resulting in a flatter radial temperature profile within the pin and much lower normal operation and transient temperatures in comparison to oxide fuel. Despite the big difference in melting point, both oxide and metal fuels have a relatively similar margin to melting during postulated accidents. When the metal fuel cladding fails, it typically occurs below the coolant boiling point and the damaged fuel pins remain coolable. Metal fuel is compatible with sodium coolant, eliminating the potential of energetic fuel-coolant reactions and flow blockages. All these, and the low retained heat leading to a longer grace period for operator action, are significant contributing factors to the inherently benign response of metallic fuel to postulated accidents. This paper summarizes the past analytical and experimental results obtained in past sodium-cooled fast reactor safety programs in the United States, and presents an overview of fuel safety performance as observed in laboratory and in-pile tests.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• 전기학회논문지
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• 제59권1호
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• pp.130-133
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• 2010

Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

• 한국표면공학회지
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• 제47권1호
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• pp.7-12
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• 2014

The characteristics of oxidation for the Zry-4 was measured in the $800^{\circ}C$ and high steam pressure (50 bar, 75 bar, 100 bar) conditions, using an apparatus for high pressure steam oxidation. The effect of accelerated oxidation by high-pressure steam was increased more than 60% in hydrogen-charged cladding than normal cladding. This difference between hydrogen charged claddings and normal claddings tends to be larger as the higher pressure. The accelerated oxidation effect of hydrogen charging cladding is regarded as the hydrogen on the metal layer affects the formation of the protective oxide layer. The creation of the sound monoclinic phase in Zry-4 oxidation influences reinforcement of corrosion-resistance of the oxide layer. The oxidation is estimated to be accelerated due to the creation of equiaxial type oxide film with lower corrosion resistance than that of columnar type oxide film. When tetragonal oxide film transformed into the monoclinic oxide film, surface energy of the new monoclinic phase reduced by hydrogen in the metal layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.296-296
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• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.

• 대한화학회지
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• 제37권4호
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• pp.416-422
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• 1993

${\alpha},{\beta}$-구리 및 무금속의 프탈로시아닌을 비이온성 계면활성제를 사용하여 수용액 중에서 산화아연에 흡착시켰더니, 첨가시킨 색소가 모두 흡착되었다. 계면활성제를 사용하지 않고 술폰화된 프탈로시아닌의 나트륨염인 경우는 Langmuir 단분자 흡착성을 나타내었다. 흡착상태에 따른 증감특성을 알기 위하여 진동용량형 표면 전위계를 사용하여 광기전력을 측정하였더니, 산화아연의 고유파장과 프탈로시아닌 색소의 흡수파장에서 높은 광기전력을 나타내었다. 계면활성제를 이용하여 흡착시킨 프탈로시아닌은 산화아연에 대한 피복율(${\theta}_{BET}$)이 약 80%에서 광기전력이 크게 나타났고, 술폰화된 프탈로시아닌은 피복율(${\theta}_{BET}$)이 약 30% 부근에서 광기전력이 증가하는 경향을 나타내었다.

• 세라미스트
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• 제21권4호
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• pp.349-365
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• 2018

Since the electrification of vehicles has been extended, solid-state batteries have been attracting a lot of interest because of their superior safety. Especially, polymer, sulfide, and oxide based materials are being studied as solid electrolytes, and each type of materials has advantaged and disadvantages over others. Oxide electrolytes has higher chemical and electrochemical stability compared to the other types of electrolytes. However, ionic conductivity isn't high enough as much as that of organic liquid electrolytes. Also, there are many difficulties of fabricating solid-state batteries with oxide based electrolytes because they require a sintering process at very high temperature (above ${\sim}800^{\circ}C$). Herein, we review recent studies of solid-state batteries with oxide based electrolytes about the ionic conductivity, interfacial reactions with Li metal, and preparation of solid-state cell.

• 한국결정성장학회지
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• 제10권6호
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• pp.412-417
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• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.