• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.3
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• pp.408-414
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• 2012

Screen printing is a printing method that uses a woven mesh to support an ink-blocking stencil by transferring ink or other printable materials in order to form an image onto a substrate. Recently, the screen printing method has applied to micro-electronic packaging by using solder paste as a printable material. For the screen printing of solder paste, metal masks containing a number of micro-holes are used as a stencil material. The metal mask undergoes deformation when it is installed in the screen printing machine, which results in the deformation of micro-holes. In the present study, finite element (FE) analysis was performed to predict the amount of deformation of a metal mask. For an efficient calculation of the micro-holes of the metal mask, the sub-domain analysis method was applied to perform FE analyses connecting the global domain (the metal mask) and the local domain (micro-holes). The FE analyses were then performed to evaluate the effects of slot designs on the deformation characteristics, from which more uniform and adjustable deformation of the metal mask can be obtained.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Current Photovoltaic Research
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• v.9 no.1
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• pp.6-10
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• 2021

The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.314-317
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• 2006

Electroformed part is widely used in modem manufacturing industries, especially semi-conductor division. It is basically a specialized form of electroplating. So, it has very similar parameters with electroplating. The object of this study is development of the fine metal mask by electroforming process. In this paper considered two parameters. The first is relationship of UV exposure and soft baking time. The other one is thickness uniformity of electroformed parts by distance of between electrodes. This paper presents the fabrication method of fine metal mask by electroforming process.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.140.2-140
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• 2001

In this paper, we develop the system which inspects the metal mask using area scan camera and belu type xy-table and introduce its inspection algorithm. Thes whole area of the metal mask is divides into several inspection block and the sixe of a inspection block is decided by FOV(Field of View). To compare with the camera image of each block, the reference image is made by gerber file. The ratation angle of the metal mask is calculated through the linear equation that is substituted two end points of horizontal boundary of a specific hole in a camera image for. To calculate the position error caused by belt type xy-table, hough-transform using the distances among the holes in two images os used. The center of the reference image is moved as much as the calculated position error to be coincide with the camera image ...

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.265-266
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• 2008

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.2
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• pp.1-9
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• 2003

We develop an experimental system to inspect a metal mask and, in this paper, introduce its inspection algorithm. This system is composed of an ASC(Area Scan Camera) and a belt type xy-table. The whole area of the metal mask is divided into several inspection blocks. The area of each block is equal to FOV(Field of View). For each block, the camera image is compared to the reference image. The reference image is made by gerber file. The rotation angle of the metal mask is calculated through the linear equation that is substituted two end points of horizontal boundary of a specific hole in a camera image. To calculate the position error caused by the belt type xy-table, HT(Hough-Transform) using distances among the holes in two images is used. The center of the reference image is moved as much as the calculated Position error to be coincided with the camera image. The information of holes in each image, such as centroid, size, width and height, are calculated through labeling. Whether a holes is mado correctly by laser machine or not, is judged by comparing the centroid and the size of hole in each image. Finally, we build the experimental system and apply this algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.