• Journal of KIISE:Computer Systems and Theory
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• v.33 no.5
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• pp.306-315
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• 2006

In general, the hit ratio of the first level cache is one of the most important factors in determining the performance of computer systems. Prefetching from lower level memory structure is one of the most useful techniques for improving the hit ratio of the first level cache. In this paper, we propose a prefetch on continuous same page access (CSPA) scheme which improves the prefetch efficiency of the instruction cache and reduces prefetch cost at the same time. The proposed CSPA scheme traces the page addresses of executed instructions to count how many times the same memory page is accessed continuously. To increase the prefetch efficiency, the CSPA scheme initiates prefetch only if the number of accesses to the same page exceeds the threshold value. Generally, the size of a L1 cache block is smaller than that of a L2 cache block. Therefore, one L2 cache block contains a number of L1 cache blocks. To reduce the number of unnecessary accesses to the L2 cache due to prefetch, the CSPA scheme enables prefetch only when the missed L1 block and the prefetch L1 block are in the same L2 cache block, leading to reduced prefetch cost. According to our simulations, the proposed prefetching scheme improves the performance by up to 6.7%.

• Journal of IKEEE
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• v.27 no.4
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• pp.644-649
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• 2023

As the cell spacing decreases during the scaling process of DRAM(Dynamic Random Access Memory), the reduction in STI(Shallow Trench Isolation) thickness leads to an increase in sub-threshold leakage due to the passing word line effect. The increase in sub-threshold leakage current caused by the voltage applied to adjacent passing word lines affects the data retention time and increases the number of refresh operations, thereby contributing to higher power consumption in DRAM. In this paper, we identify the causes of the passing word line effect through TCAD Simulation. As a result, we confirm the DRAM operational conditions under which the passing word line effect occurs, and observe that this effect alters the proportion of the total leakage current attributable to different causes. Through this, we recognize the necessity to consider not only leakage currents due to GIDL(Gate Induced Drain Leakage) but also sub-threshold leakage currents, providing guidance for improving DRAM structure.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.33 no.2
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• pp.295-303
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• 2023

As the cloud computing market grows, a variety of cloud services are now reliably delivered. Administrative agencies and public institutions of South Korea are transferring all their information systems to cloud systems. It is essential to develop security solutions in advance in order to safely operate cloud services, as protecting cloud services from misuse and malicious access by insiders and outsiders over the Internet is challenging. In this paper, we propose a zero trust model for cloud storage services that store sensitive data. We then verify the effectiveness of the proposed model by operating a cloud storage service. Memory, web, and network forensics are also performed to track access and usage of cloud users depending on the adoption of the zero trust model. As a cloud storage service, we use Amazon S3(Simple Storage Service) and deploy zero trust techniques such as access control lists and key management systems. In order to consider the different types of access to S3, furthermore, we generate service requests inside and outside AWS(Amazon Web Services) and then analyze the results of the zero trust techniques depending on the location of the service request.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Nutrition Research and Practice
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• v.5 no.4
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• pp.294-300
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• 2011

Takju is a Korean alcoholic beverage made from rice, and is brewed with the yeast Saccharomyces cerevisiae. This study was conducted to evaluate the effects of exercise training and moderate Takju consumption on learning ability in 6-week old Sprague-Dawley male rats. The rats were treated with exercise and alcohol for 4 weeks in six separate groups as follows: non-exercised control (CC), exercised control (EC), non-exercised consuming ethanol (CA), exercised consuming ethanol (EA), non-exercised consuming Takju (CT), and exercised consuming Takju (ET). An AIN-93M diet was provided ad libitum. Exercise training was performed at a speed of 10 m/min for 15 minutes per day. Ethanol and Takju were administered daily for 6-7 hours to achieve an intake of about 10 ml after 12 hours of deprivation, and, thereafter, the animals were allowed free access to deionized water. A Y-shaped water maze was used from the third week to understand the effects of exercise and alcohol consumption on learning and memory. After sacrifice, brain acetylcholinesterase (AChE) activity was analyzed. Total caloric intake and body weight changes during the experiment were not significantly different among the groups. AChE activity was not significantly different among the groups. The number of errors for position reversal training in the maze was significantly smaller in the EA group than that in the CA and ET groups, and latency times were shorter in the EA group than those in the CC, EC, CT, and ET groups. The latency difference from the first to the fifth day was shortest in the ET group. The exercised groups showed more errors and latency than those of the non-exercised groups on the first day, but the data became equivalent from the second day. The results indicate that moderate exercise can increase memory and learning and that the combination of exercise and Takju ingestion may enhance learning ability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.57-64
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• 2002

The structure of conventional CAM(Content Addressable Memory) cell, used to Look-up table scheme in Huffman CODEC, is not performed by being separated in reading, writing and match operation. So, there is disadvantages that the control is complicated, and the floating states of match line force wrong operation to be happened in reading, writing operation. In this paper, in order to improve the disadvantages and proces the data fast, fast Look-up table is designed using DBLCAM(Dual Bit Line CAM)-performing the reading, writing operation and match operation independently and Two-port SRAM being more fast than RAM in an access speed. Look-up table scheme in Huffman CODEC, using DBLCAM and Two-port SRAM proposed in this paper, is designed in Cadence tool, and layout is performed in 0.6${\mu}{\textrm}{m}$ 2-poly 3-metal CMOS full custom. And simulation is peformed with Hspice.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.68-75
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• 2009

As the recent performance of microprocessor is improving quickly, the necessity of cache is growing because of the increase of the access time of main memory. Every block of direct-mapped cache maps to one cache line. Although the mapping rule is simple, if different blocks map to one cache line, the miss ratio will be higher than the set-associative cache due to conflicts. In this paper, for the improvement of the direct-mapped cache of OpenRISC, 4-way set-associative cache is proposed. Four blocks of the main memory of the proposed cache map to one cache line so that the miss ratio is less than the direct-mapped cache. Pseudo-LRU Policy, which is one of the Line Replacement Policies, is used for decreasing the number of bits that store LRU value. The OpenRISC core including the 4-way set-associative cache was verified with FPGA emulation. As the result of performance measurement using test program, the performance of the OpenRISC core including the 4-way set-associative cache is higher than the previous one by 50% and the decrease of miss ratio is more than 15%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.77-82
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• 2008

H.264 is a video coding standard of ITU-T and ISO/IEC, and widely spreads its application due to its high compression ratio more than twice that of MPEG-2 and high image quality. It has different architecture depending on demands since it is a lied from small image of QVGA to large size of HD. In this paper, We propose a scalable architecture for intra-prediction of H.264 decoders. The proposed scheme has a scalable architecture that can accommodate up to 4 processing elements depending on performance demands and can reduce the number of access to memory using efficient memory management so as to be energy-efficient. We design the intra-prediction unit using Verilog-HDL and verily it by prototyping using an FPGA. The performance is analyzed using the results of design.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.181.1-181.1
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• 2015

용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.