• 제목/요약/키워드: Memory access

검색결과 1,134건 처리시간 0.029초

고속 영상처리를 위한 다중접근 기억장치의 구현 (An Implementation of Multiple Access Memory System for High Speed Image Processing)

  • 김길윤;이형규;박종원
    • 전자공학회논문지B
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    • 제29B권10호
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    • pp.10-18
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    • 1992
  • This paper considers and implementation of the memory system which provides simultaneous access to pq image points of block(p$\times$q), horizontal vector(1$\times$pq)and/vertical vector(pq$\times$1) in 2-dimension image array, where p and q are design parameters. This memory system consists of an address calculation circuit, address routing circuit, data routing circuit, module selection circuit and m memory modules where m>qp. The address calculation circuit computes pq addresses in parallel by using the difference of addresses among image points. Extra module assignment circuit is not used by improving module selection circuit with routhing circuit. By using Verilog-XL logic simulator, we verify the correctness of the memory system and estimate the performance. The implemented system provides simultaneous access to 16 image points and is 6 times faster than conventional memory system.

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대규모 영상처리를 위한 외장 메모리 확장장치의 구현 (Implementation of External Memory Expansion Device for Large Image Processing)

  • 최용석;이혜진
    • 방송공학회논문지
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    • 제23권5호
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    • pp.606-613
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    • 2018
  • 본 연구는 대규모 영상처리를 위한 메모리 확장을 위한 외장 메모리 확장장치 구현에 관련된 내용으로, 이는 영상처리를 위한 그래픽 워크스테이션에 장착되는 PCI(Peripheral Component Interconnect) Express Gen3 x8 인터페이스를 가지는 외장 메모리 어댑터 카드와 외장 DDR(Dual Data Rate) 메모리로 구성된 외장 메모리 보드로 구성되며, 메모리 어댑터 카드와 외장 메모리 보드간의 연결은 광 인터페이스를 통하여 이루어진다. 외장 메모리 억세스를 위해서는 Programmable I/O 방식과 DMA(Direct Memory Access) 방식을 모두 사용할 수 있도록 하여 영상 데이터의 효율적 송수신이 이루어지도록 하였다. 본 연구 결과의 구현은 Altera Stratix V FPGA(Field Programmable Gate Array)와 40G 광 트랜시버가 장착된 보드를 사용하였으며, 1.6GB/s의 대역폭 성능을 보여주고 있다. 이는 4K UHD(Ultra High Definition) 영상 한 채널을 담당할 수 있는 규모이다. 향후 본 연구를 계속 진행하여 3GB/s 이상 대역폭을 보이는 연구결과를 보일 예정이다.

SPIN ENGINEERING OF FERROMAGNETIC FILMS VIA INVERSE PIEZOELECTRIC EFFECT

  • Lee, Jeong-Won;Shin, Sung-Chul;Kim, Sang-Koog
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.188-189
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    • 2002
  • One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

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RISC 병렬 처리를 위한 기억공간의 효율적인 활용 알고리즘 (An efficient Storage Reclamation Algorithm for RISC Parallel Processing)

  • 이철원;임인칠
    • 전자공학회논문지B
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    • 제28B권9호
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    • pp.703-711
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    • 1991
  • In this paper, an efficient storage reclamation algorithm for RISC parallel processing in the object orented programming environments is presented. The memory management for the dynamic memory allocation and the frequent memory access in object oriented programming is the main factor that decreases RISC parallel processing performance. The proposed algorithm can be efficiently allocated the memory space of RISCy computer which is required the frequent memory access, so it can be increased RISC parallel processing performance. The proposed algorithm is verified the efficiency by implementing C language on SUN SPARC(4.3 BSD UNIX).

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다중프로세서시스테멩 대한 파이프라인 방식 메모리 접근제어의 설계와 그 효율분석 (A Design of Pipelined Memory Access Control for Multiprocessor Systems and its Evaluation)

  • 김정두;손윤구
    • 대한전자공학회논문지
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    • 제25권8호
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    • pp.927-936
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    • 1988
  • This paper proposes a pipelined memory access method as a new technique for a bus interface between processors and memories in tightly coupled multiprocessor systems. Since the shared bus is bottle neck of the system, model of pipelined access to memory has been developed. Results of the evaluation by the discrete time Markov model showed a significant improvement of the efficiency.

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스핀 터널링 거대자기저항 효과를 이용한 랜덤 엑세스 메모리 (Random Access Memory utilizing Spin Tunneling Giant Magnetoresistance Effect)

  • 박승영;최연봉;조순철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.950-953
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    • 1999
  • Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory

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고성능 저전력 하이브리드 L2 캐시 메모리를 위한 연관사상 집합 관리 (Way-set Associative Management for Low Power Hybrid L2 Cache Memory)

  • 정보성;이정훈
    • 대한임베디드공학회논문지
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    • 제13권3호
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    • pp.125-131
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    • 2018
  • STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

IoT 기반 간헐적 이벤트 로깅 응용에 최적화된 효율적 플래시 메모리 전력 소모 감소기법 (Efficient Flash Memory Access Power Reduction Techniques for IoT-Driven Rare-Event Logging Application)

  • 권지수;조정훈;박대진
    • 대한임베디드공학회논문지
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    • 제14권2호
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    • pp.87-96
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    • 2019
  • Low power issue is one of the most critical problems in the Internet of Things (IoT), which are powered by battery. To solve this problem, various approaches have been presented so far. In this paper, we propose a method to reduce the power consumption by reducing the numbers of accesses into the flash memory consuming a large amount of power for on-chip software execution. Our approach is based on using cooperative logging structure to distribute the sampling overhead in single sensor node to adjacent nodes in case of rare-event applications. The proposed algorithm to identify event occurrence is newly introduced with negative feedback method by observing difference between past data and recent data coming from the sensor. When an event with need of flash access is determined, the proposed approach only allows access to write the sampled data in flash memory. The proposed event detection algorithm (EDA) result in 30% reduction of power consumption compared to the conventional flash write scheme for all cases of event. The sampled data from the sensor is first traced into the random access memory (RAM), and write access to the flash memory is delayed until the page buffer of the on-chip flash memory controller in the micro controller unit (MCU) is full of the numbers of the traced data, thereby reducing the frequency of accessing flash memory. This technique additionally reduces power consumption by 40% compared to flash-write all data. By sharing the sampling information via LoRa channel, the overhead in sampling data is distributed, to reduce the sampling load on each node, so that the 66% reduction of total power consumption is achieved in several IoT edge nodes by removing the sampling operation of duplicated data.

FinFET SRAM Cells with Asymmetrical Bitline Access Transistors for Enhanced Read Stability

  • Salahuddin, Shairfe Muhammad;Kursun, Volkan;Jiao, Hailong
    • Transactions on Electrical and Electronic Materials
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    • 제16권6호
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    • pp.293-302
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    • 2015
  • Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.

차세대 CPU를 위한 캐시 메모리 시스템 설계 (Design of Cache Memory System for Next Generation CPU)

  • 조옥래;이정훈
    • 대한임베디드공학회논문지
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    • 제11권6호
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    • pp.353-359
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    • 2016
  • In this paper, we propose a high performance L1 cache structure for the high clock CPU. The proposed cache memory consists of three parts, i.e., a direct-mapped cache to support fast access time, a two-way set associative buffer to reduce miss ratio, and a way-select table. The most recently accessed data is stored in the direct-mapped cache. If a data has a high probability of a repeated reference, when the data is replaced from the direct-mapped cache, the data is stored into the two-way set associative buffer. For the high performance and fast access time, we propose an one way among two ways set associative buffer is selectively accessed based on the way-select table (WST). According to simulation results, access time can be reduced by about 7% and 40% comparing with a direct cache and Intel i7-6700 with two times more space respectively.