• Title/Summary/Keyword: Memory Reference

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Scalar First Replacement Strategy for Reference Prediction Table Used in Prefetching Streaming Data (스트리밍 데이터의 선인출에 사용되는 참조예측표의 스칼라 우선 교체 전략)

  • Lim, Chul-hoo;Chon, Young-Suk;Kim, Suk-il;Jeon, Joong-nam
    • The KIPS Transactions:PartA
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    • v.11A no.3
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    • pp.163-172
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    • 2004
  • Multimedia applications tend to access their data as a streaming pattern with regular intervals. This characteristic can be utilized in prefetching the multimedia data into cache memory so as to reduce their execution speeds. The reference-prediction prefetch algorithm predicts the memory address that seems to be used in the next time based on the previous history of memory references stored in the prediction reference table. This paper proposes a strategy to manipulate the reference prediction table which contains all of the data reference instructions to scalar and streaming data. We have recognized that the scalar reference instructions do not contribute to the data prefetching algorithm. Therefore, when replacing an element in the reference prediction table, the proposed algorithm preferentially selects the scalar reference instruction before the stream reference instruction. It makes the stream reference instruction to stay for a long time compared to the FIFO replacement policy, and eventually improves the performance of data prefetching.

Memory Access Reduction Scheme for H.264/AVC Decoder Motion Compensation (H.264/AVC 디코더의 움직임 보상을 위한 메모리 접근 감소 기법)

  • Park, Kyoung-Oh;Hong, You-Pyo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.4C
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    • pp.349-354
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    • 2009
  • In this paper, a new motion compensation scheme to reduce external memory access frequency which is one of the major bottlenecks for real-time decoding is proposed. Most H.264/AVC decoders store reference pictures in external memories due to the large size and reference blocks are read into the decoder core as needed during decoding. If the reference data access is done for each reference block in decoding sequence, the memory bandwidth can be unacceptable for real-time decoding. This paper presents a memory access scheme for motion compensation to read as many reference data as possible with reduced memory access frequency by analyzing reference data access pattern for each macroblock. Experimental results show that the proposed motion compensation scheme leads to approximately 30% improvement in memory bandwidth requirement.

Design of a Low Memory Bandwidth Inter Predictor Using Implicit Weighted Prediction Technique (묵시적 가중 예측기법을 이용한 저 메모리 대역폭 인터 예측기 설계)

  • Kim, Jinyoung;Ryoo, Kwangki
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.12
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    • pp.2725-2730
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    • 2012
  • In this paper, for improving the H.264/AVC hardware performance, we propose an inter predictor hardware design using a multi reference frame selector and an implicit weighted predictor. previous reference frame are reused for Low Memory Bandwidth. The size of the reference memory in the predictor was reduced by about 46% and the external memory access rate was reduced by about 24% compared with the one in the reference software JM16.0. We designed the proposed system with Verilog-HDL and synthesized inter predictor circuit using the Magnachip 0.18um CMOS standard cell library. The synthesis result shows that the gate count is about 2,061k and the design can run at 91MHz.

Characterization Method of Memory Compiler Using Reference Memories (기준 메모리를 이용한 메모리 컴파일러 특성화 방법)

  • Shin, Woocheol;Song, Hyekyoung;Jung, Wonyoung;Cho, Kyeongsoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.2
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    • pp.38-45
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    • 2014
  • This paper proposes a characterization method based on the reference memory to characterize memory compiler quickly and accurately. In order to maintain the accuracy of the memory complier and to minimize characterization time, the proposed method models the trends of the generated memories by selecting the reference memories after analyzing the timing trends of the memory compiler. To validate the proposed method, we characterized the 110nm memory compiler derived from 130nm memroy compiler. The average error rate of the characteristics of the memories generated by the proposed method and SPICE simulation is lower than ${\pm}0.1%$. Furthermore, we designed memory BIST test chips at 110nm and 180nm processes and the results of the function test show that the yield is 98.8% and 98.3%, respectively. Therefore, the proposed method is useful to characterize the memory compiler.

Analyzing Virtual Memory Write Characteristics and Designing Page Replacement Algorithms for NAND Flash Memory (NAND 플래시메모리를 위한 가상메모리의 쓰기 참조 분석 및 페이지 교체 알고리즘 설계)

  • Lee, Hye-Jeong;Bahn, Hyo-Kyung
    • Journal of KIISE:Computer Systems and Theory
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    • v.36 no.6
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    • pp.543-556
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    • 2009
  • Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.

Widely Tunable Adaptive Resolution-controlled Read-sensing Reference Current Generation for Reliable PRAM Data Read at Scaled Technologies

  • Park, Mu-hui;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.363-369
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    • 2017
  • Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

Caching and Prefetching Policies Using Program Page Reference Patterns on a File System Layer for NAND Flash Memory (NAND 플래시 메모리용 파일 시스템 계층에서 프로그램의 페이지 참조 패턴을 고려한 캐싱 및 선반입 정책)

  • Kim, Gyeong-San;Kim, Seong-Jo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.777-778
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    • 2006
  • In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.

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Analysis of Memory Write Reference Patterns in Mobile Applications (모바일 앱의 메모리 쓰기 참조 패턴 분석)

  • Lee, Soyoon;Bahn, Hyokyung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.21 no.6
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    • pp.65-70
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    • 2021
  • Recently, as the number of mobile apps rapidly increases, the memory size of smartphones keeps increasing. Smartphone memory consists of DRAM and as it is a volatile medium, continuous refresh operations for all cells should be performed to maintain the contents. Thus, the power consumption of memory increases in proportion to the DRAM size of the system. There are attempts to configure the memory system with low-power non-volatile memory instead of DRAM to reduce the power consumption of smartphones. However, non-volatile memory has weaknesses in write operations, so analysis of write behaviors is a prerequisite to realize this in practical systems. In this paper, we extract memory reference traces of mobile apps and analyze their characteristics specially focusing on write operations. The results of this paper will be helpful in the design of memory management systems consisting of non-volatile memory in future smartphones.

Page replication mechanism using adjustable DELAY counter in NUMA multiprocessors (NUMA 다중처리기에서 조정가능한 지연 카운터를 이용한 페이집 복사 기법)

  • 이종우;조유곤
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.6
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    • pp.23-33
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    • 1996
  • The exploitation of locality of reference in shared memory NUMA multiprocessors is one of the improtant problems in parallel processing today. In this paper, we propose a revised hardeare reference counter to help operating system to manage locality. In contrast to the previous one, the value of counter can abe adjusted dynamically and periodically to adapt the page replication policy to the various memory reference patterns of processors. We use execution-driven simulation of real applications to evaluate the effectiveness of our adjustable DELAY counter. Our main conclusijon is that by using the adjustable DELAY counter the t normalized average memory access costs and the variance of them become smaller for most applications than the previous one and more robust memory management policies can be provided for the operating systems.

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Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory

  • Choi, Jun-Tae;Kil, Gyu-Hyun;Kim, Kyu-Beom;Song, Yun-Heub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.31-38
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    • 2016
  • A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard $0.18{\mu}m$ CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.