• Journal of the Korea Society of Computer and Information
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• v.20 no.11
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• pp.1-8
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• 2015

Flash memory has advantages in that it is fast access speed, low-power, and low-price. Therefore, they are widely used in electronics industry sectors. However, the flash memory has weak points, which are the limited number of erase operations and non-in-place update problem. To overcome the limited number of erase operations, many wear leveling techniques are studied. They use many tables storing information such as erase count of blocks, hot and cold block indicators, reference count of pages, and so on. These tables occupy some space of main memory for the wear leveling techniques. Accordingly, they are not appropriate for low-power devices limited main memory. In order to resolve it, a wear leveling technique using bit array and Bit Set Threshold (BST) for flash memory. The proposing technique reduces the used space of main memory using a bit array table, which saves the history of block erase operations. To enhance accuracy of cold block information, we use BST, which is calculated by using the number of invalid pages of the blocks in a one-to-many mode, where one bit is related to many blocks. The performance results illustrate that the proposed wear leveling technique improve life time of flash memory to about 6%, compared with previous wear leveling techniques using a bit array table in our experiment.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.8-13
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• 1997

This paper describes a scalable systolic synchronous memory for digital signal processing and packet switching. The systolic synchronous memory consists of the 2-D array of small memory blocks which are fully pipelined and communicated in three directions with adjacent blocks. The maximum delay of a small memory block becomes the operation speed of the chip. The array configuration is scalable for the entire memory size requested by an application. it has the initial latency of N+3 cycles with NxN array configuration. We designed an experimental 200 MHz 4Kb static RAM chip with the 4x4 array configuration of 256 SRAM blocks. It was fabricated is 0.8$\mu\textrm{m}$ twin-well single-poly double-metal CMOS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.222-227
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• 2004

The sub-bitline (SBL) sensing voltage of a cell and total cell array can be measured by the method of SBL voltage evaluation method. The MOSAID tester can collect all SBL signals. The hierarchical bitline of unit cell array block is composed of the cell array of 2k rows and 128 columns, which is divided into 32 cell array sections. The unit cell array section is composed of the cell array of 64 rows and 128 columns. The average sensing voltage with 2Pr value of $5{\mu}C/cm^2$ and SBL capacitance of 40fF is about 700mV at 3.0V operation voltage. That is high compensation method for capacitor size degradation effect. Thus allowed minimum 2Pr value for high density Ferroelectric RAM (FeRAM) can move down to about less than $5{\mu}C/cm^2$.

• IEMEK Journal of Embedded Systems and Applications
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• v.6 no.6
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• pp.345-359
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• 2011

In high performance embedded systems, the use of multiple on-chip memories is an essential architectural feature for exploiting inherent parallelism in multimedia applications. This feature allows multiple data accesses to be executed in parallel. However, it remains difficult to effectively exploit of multiple on-chip memories. The successful use of this architecture strongly depends on how to efficiently detect and exploit memory parallelism in target applications. In this paper, we propose a technique based on a linear array access descriptor [1], which is generated from profiled data, to detect and exploit memory parallelism. The proposed technique tackles an array reorganization problem to maximize memory parallelism in multimedia applications. We present preliminary experiments applying the proposed technique onto a representative coarse grained reconfigurable array processor (CGRA) with multimedia kernel codes. Our experimental results demonstrate that our technique optimizes data placement by putting independent data on separate storage. The results exhibit 9.8% higher performance on average compared to the existing method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.48-51
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• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• Journal of the Korea Society of Computer and Information
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• v.22 no.5
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• pp.1-9
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• 2017

Recently, flash memory has been in a great demand from embedded system sectors for storage devices. However, program/erase (P/E) cycles per block are limited on flash memory. For the limited number of P/E cycles, many wear leveling techniques are studied. They prolonged the life time of flash memory using information tables. As one of the techniques, block erase table (BET) method using a bit array table was studied for embedded devices. However, it has a disadvantage in that performance of wear leveling is sharply low, when the consumption of memory is reduced. To solve this problem, we propose a novel wear leveling technique using Sampling-based Block Erase Table (SBET). SBET relates one bit of the bit array table to each block by using exclusive OR operation with round robin function. Accordingly, SBET enhances accuracy of cold block information and can prevent to decrease the performance of wear leveling. In our experiment, SBET prolongs life time of flash memory by up to 88%, compared with previous techniques which use a bit array table.

• ETRI Journal
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• v.25 no.3
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• pp.179-186
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• 2003

Using biometrics to verify a person's identity has several advantages over the present practices of personal identification numbers (PINs) and passwords. At the same time, improvements in VLSI technology have recently led to the introduction of smart cards with 32-bit RISC processors. To gain maximum security in verification systems using biometrics, verification as well as storage of the biometric pattern must be done in the smart card. However, because of the limited resources (processing power and memory space) of the smart card, integrating biometrics into it is still an open challenge. In this paper, we propose a fingerprint verification algorithm using a multi-resolution accumulator array that can be executed in restricted environments such as the smart card. We first evaluate both the number of instructions executed and the memory requirement for each step of a typical fingerprint verification algorithm. We then develop a memory-efficient algorithm for the most memory-consuming step (alignment) using a multi-resolution accumulator array. Our experimental results show that the proposed algorithm can reduce the required memory space by a factor of 40 and can be executed in real time in resource-constrained environments without significantly degrading accuracy.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.2
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• pp.87-92
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• 2001

This paper proposes a new content-addressable memory implemented with an analog array which has linear writing and erasing characteristics. The size of the array in this memory is $2{\times}2$, which is a reasonable structure for checking the disturbance of the unselected cells during programming. An intermediate voltage, Vmid, is used for preventing the interference during programming. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We simulate the function of the mechanism by means of Hspice with 1.2${\mu}m$ double poly CMOS parameters of MOSIS fabrication process.

• Journal of IKEEE
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• v.24 no.3
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• pp.797-802
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• 2020

In this paper, we presents the design and implementation results of the FFT processor, which supports 4096 points of operation with less memory by sharing several memory used in the base-4 systolic array FFT processor into one memory. Sharing memory provides the advantage of reducing the area, and also simplifies the flow of data as I/O of the data progresses in one memory. The presented FFT processor was implemented and verified on the FPGA device. The implementation resulted in 51,855 CLB LUTs, 29,712 CLB registers, 8 block RAM tiles and 450 DSPs, and confirmed that the memory area could be reduced by 65% compared to the existing base-4 systolic array structure.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.168-169
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• 2000

We have tried to enhance the density of the near-field optical memory and to improve the recording/readout speed. The current optical memory has the limitation in both density and speed. This barrier due to the far-field nature can be overcome by the use of the near-field$^{(1)}$ . The optical data storage density can be increased by reducing the size of the nanometric aperture where the near-field is obtained. To fabricate the aperture in precise dimension, we applied the orientation-dependent / anisotropic etching property of crystal Si often employed in the field of MEMS$^{(2)}$ . And so we fabricated the 10$\times$10 aperture array. This array will be also the indispensable part for speeding up. One will see the possibility of the multi-tracking pickup in the phase changing type memory through this array$^{(3)}$ . This aperture array will be expected to write the bit-mark whose size is about 100nm. We will show the recent result obtained. (omitted)