• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.1-5
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• 2008

In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• Tribology and Lubricants
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• v.39 no.5
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• pp.197-202
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• 2023

Recently, research on experimental and analytical techniques utilizing microfluidic devices has been pursued. For example, lab-on-a-chip devices that integrate micro-devices onto a single chip for processing small sample quantities have gained significant attention. However, during sample preparation, unnecessary gases can be introduced into the internal channels, thus, impeding device flow and compromising specific function efficiency, including that of analysis and separation. Several methods have been proposed to mitigate this issue, however, many involve cumbersome procedures or suffer from complexities owing to intricate structures. Recently, some approaches have been introduced that utilize hydrophobic device structures to remove gases within channels. In such cases, the permeability of gases passing through the structure becomes a crucial performance factor. In this study, a method involving the deposition and sintering of diluted Ag-ink onto a silicon wafer surface is presented. This is followed by unstructured nano-pattern creation using a Metal Assisted Chemical Etching (MACE) process, which yields a nanostructured surface with unstructured pillar shapes. Subsequently, gas permeability in the spaces formed by these surface structures is investigated. This is achieved by experiments conducted to incorporate a pressure chamber and measure gas permeability. Trends are subsequently analyzed by comparing the results with existing theories. Finally, it can be confirmed that the significance of this study primarily lies in its capability to effectively evaluate gas permeability through unstructured pillar-like nanostructures, thus, providing quantitative values for the appropriate driving pressure and expected gas removal time in practical device operation.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.703-704
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• 2008

We fabricated and tested porous silicon-based electroosmotic pumps. Compared to other pumping media, porous silicon is beneficial for obtaining comparable flow rates with much lowered electric potential, while maintaining enough mechanical properties. We fabricated porous silicon with two sided-reactive etching processes. We found higher flow rate per electric potential (consistent with previous studies) and we also found asymmetric flow rates for different pumping directions. We plan to utilize this asymmetry for AC pumping applications.

• The Journal of Advanced Prosthodontics
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• v.9 no.5
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• pp.350-357
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• 2017

PURPOSE. The object of the present study was to evaluate the shear bonding strength of composite to PEKK by applying several methods of surface treatment associated with various bonding materials. MATERIALS AND METHODS. One hundred and fifty PEKK specimens were assigned randomly to fifteen groups (n = 10) with the combination of three different surface treatments (95% sulfuric acid etching, airborne abrasion with $50{\mu}m$ alumina, and airborne abrasion with $110{\mu}m$ silica-coating alumina) and five different bonding materials (Luxatemp Glaze & Bond, Visio.link, All-Bond Universal, Single Bond Universal, and Monobond Plus with Heliobond). After surface treatment, surface roughness and contact angles were examined. Topography modifications after surface treatment were assessed with scanning electron microscopy. Resin composite was mounted on each specimen and then subjected to shear bond strength (SBS) test. SBS data were analyzed statistically using two-way ANOVA, and post-hoc Tukey's test (P<.05). RESULTS. Regardless of bonding materials, mechanical surface treatment groups yielded significantly higher shear bonding strength values than chemical surface treatment groups. Unlike other adhesives, MDP and silane containing self-etching universal adhesive (Single Bond Universal) showed an effective shear bonding strength regardless of surface treatment method. CONCLUSION. Mechanical surface treatment behaves better in terms of PEKK bonding. In addition, self-etching universal adhesive (Single Bond Universal) can be an alternative bonding material to PEKK irrespective of surface treatment method.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1637-1642
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• 2010

In this paper, we present the fabrication of a high-quality diffractive-lens mold having submicron patterns, which is suitable for an ultra-slim optical system. In order to fabricate high-quality diffractive lens with a variety of submicron patterns, the multi-alignment method was used; high-resolution electron-beam lithography and FAB plasma etching were carried out to obtain the patterns. The most important key technology in the multi-alignment method is to reduce alignment error, lithography error, and etching error. In this paper, these major fabrication errors were minimized, and a high-quality diffractive lens with a diameter of $267\;{\mu}m$ (NA = 0.25), minimum pattern width of 226 nm, and thickness of 819 nm was successfully fabricated.

• ETRI Journal
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• v.27 no.1
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• pp.89-94
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• 2005

This paper describes a low-loss, compact, 40-channel arrayed waveguide grating (AWG) which utilizes a monolithically integrated spot-size converter (SSC) for lowering the coupling loss between silica waveguides and standard single-mode fibers. The SSC is a simple waveguide structure that is tapered in both the vertical and horizontal directions. The vertically tapered structure was realized using a shadow-mask etching technique. By employing this technique, the fabricated, 40-channel, 100 GHz-spaced AWG with silica waveguides of 1.5% relative index-contrast showed an insertion-loss figure of 2.8 dB without degrading other optical performance.