Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 7 Issue 1
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- Pages.1-5
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- 2008
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- 1738-2270(pISSN)
Fabrication of a Pressure Difference Type Gas Flow Sensor using ICP-RIE Technology
ICP-RIE 기술을 이용한 차압형 가스유량센서 제작
- Lee, Young-Tae (Dept. of Information Technology & Electronics Education, Andong National University) ;
- Ahn, Kang-Ho (Dept. of Mechanical Eng., Hanyang University) ;
- Kwon, Yong-Taek (R&D Center, HCT) ;
- Takao, Hidekuni (Dept. of Electrical & Electronic Eng., Toyohashi University of Technology) ;
- Ishida, Makoto (Dept. of Electrical & Electronic Eng., Toyohashi University of Technology)
- Published : 2008.03.31
Abstract
In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator(