• Journal of the Korean Society for Precision Engineering
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• v.30 no.2
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• pp.148-153
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• 2013

This study demonstrates a novel hybrid surface polishing process combining non-traditional electrochemical polishing(ECP) with external artificial ultrasonic vibration. ECP, typical noncontact surface polishing process, has been used to improve surface quality without leaving any mechanical scratch marks formed by previous mechanical processes, which can polish work material by electrochemical dissolution between two electrodes surfaces. This research suggests vibration electrochemical polishing(VECP) assisted by ultrasonic vibration for enhancing electrochemical reaction and surface quality compared to the conventional ECP. The localized roughness of work material is measured by atomic force microscopy(AFM) for detailed information on surface. Besides roughness, overall surface quality, material removal rate(MRR), and productivity etc. are compared with conventional ECP.

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.100-106
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• 2013

Stainless steel has some excellent properties as the material for the mechanical component. Purpose of this study is carried out to obtain mirror surface on the surperfinishing of stainless steel with high efficiency. To achieve this, we have conducted a series of polishing experiment for stainless steel using abrasive film from the perspective of oscillation speed, the rotational speed of workpiece, contact roller hardness, contact pressure and feed rate. Abrasive film used this study is a micro-finishing film and a lapping film. Furthermore, the polishing characteristics and efficiency of stainless steel is discussed through measuring optimal polishing time and surface roughness. From the obtained results, it was confirmed that efficient superfinishing conditions and polishing characteristic of Stainless steel can be determined.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.236-246
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• 2022

Electropolishing is a surface finishing treatment that compensates for the disadvantages of the mechanical polishing process. It not only has a smooth surface, but also improves corrosion resistance. Therefore, the purpose of this investigation is to examine the corrosion resistance and electrochemical characteristics in seawater of UNS S31603 with electropolishing process time. The roughness improvement rate after electropolishing was improved by about 78% compared to before polishing, indicating that the electropolishing is effective. As a result of potential measuring of mechanical polishing and electropolishing, the potential of electropolishing was nobler than the mechanical polishing condition. As a result of calculating the corrosion current density after potentiodynamic polarization experiment with electropolishing conditions, the corrosion current density of mechanical polishing was about 6.4 times higher than that of electropolishing. After potentiodynamic polarization experiment with electropolishing conditions, the maximum damage depth of mechanical polishing was about 2.2 times higher than that of electropolishing(7 minutes). In addition, the charge transfer resistance of the specimen electropolished for 7 minutes was the highest, indicating improved corrosion resistance.

• Tribology and Lubricants
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• v.38 no.6
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• pp.247-254
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• 2022

Chemical mechanical polishing (CMP) is a hybrid surface-polishing process that utilizes both mechanical and chemical energy. However, the recently emerging semiconductor substrate and thin film materials are challenging to process using the existing CMP. Therefore, previous researchers have conducted studies to increase the material removal rate (MRR) of CMP. Most materials studied to improve MRR have high hardness and chemical stability. Methods for enhancing the material removal efficiency of CMP include additional provision of electric, thermal, light, mechanical, and chemical energies. This study aims to introduce research trends on CMP using ultraviolet (UV) light to these methods to improve the material removal efficiency of CMP. This method, photocatalysis-assisted chemical mechanical polishing (PCMP), utilizes photocatalytic oxidation using UV light. In this study, the target materials of the PCMP application include SiC, GaN, GaAs, and Ru. This study explains the photocatalytic reaction, which is the basic principle of PCMP, and reviews studies on PCMP according to materials. Additionally, the researchers classified the PCMP system used in existing studies and presented the course for further investigation of PCMP. This study aims to aid in understanding PCMP and set the direction of future research. Lastly, since there have not been many studies on the tribology characteristics in PCMP, research on this is expected to be required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.358-359
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• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.839-845
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• 2007

In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.4
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• pp.301-306
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• 2016

High speed polishing can kinematically increase the polishing removal rate by using the conventional Preston equation, especially for hard substrates such as sapphire or diamond. However, high speed effects should be clarified beforehand considering the lubrication state and process parameter variations. In this paper, we developed a polishing experimental method and apparatus to determine the lubrication state by measuring the real time friction coefficient using two load cells. Through experiments, we obtained a boundary lubrication state above 0.35 of the friction coefficient by using low table speed and high polishing load, indicating a synchronized stable behavior in polishing head rotation. However, larger Stribeck indexes by a high speed above 200 rpm can generate a hydrodynamic lubrication state below 0.25 of the low friction coefficient. This causes the polishing head rotation to stop. A forced and synchronized head rotation is required for high speed polishing.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.196-203
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• 2002

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.266-272
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• 2012

This paper has aims to share fundamental knowledge for magnetic abrasive polishing and to mainly introduce recent research results. In order to enhance a magnetic flux density for nonferrous materials, advanced magnetic abrasive polishing system which is called 2nd generation system was established by electro-magnet array table, and the effectiveness of the electromagnet array table was evaluated in real polishing experiments. To increase adhesiveness of the abrasives in high speed polishing, a silicone gel agent was proposed and carbon nanotube particles as new magnetic abrasives were applied in the magnetic abrasive polishing. In addition, a strategy for optimal step-over determination by heuristic algorithm was introduced for applying large size workpiece. Curved surfaces having a uniform radius were simulated and tested with installed electro-magnet array table.