• 제목/요약/키워드: Mechanical Polishing

검색결과 768건 처리시간 0.028초

자기연마법을 이용한 볼나사의 연마가공에 관한 연구 (A Study on Ball Screw Polishing Using Magnetic Assisted Polishing)

  • 이용철;이응숙;최헌종
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 추계학술대회 논문집
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    • pp.43-47
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    • 1995
  • The ball screw is one of the important mechanical parts for the linear motion feeding systems. The usage of the ball screw has been growing in various industrial fields such as CNC machine tool, industrial robot and automated systems. Because of ever increasing demand for ball screws, increased accuracy and quality of the ball screw is needed,especially the surface roughness of the ball contact area in order to diminish noise and vibration. Therefore to improve the surface roughness of the area,we introduced magnetic assisted polishing which is one of the new potential polishing methods. In this study, diamond slurry and iron powder was used for magnetic assisted polishing of the ball bearing surface. This polishing process was experimentally confirmed to improve the surface roughness of the ball bearing.

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마그네슘 합금강의 제2세대 자기연마에서 표면거칠기 예측모델 개발 (Development of Prediction Model and Parameter Optimization for Second-Generation Magnetic Abrasive Polishing of Magnesium Alloy)

  • 김상오;이성호;곽재섭
    • 대한기계학회논문집A
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    • 제35권4호
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    • pp.401-407
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    • 2011
  • 본 연구에서는 AZ31B 마그네슘 합금 평판 연마에 제 2세대 자기연마공정을 적용하고 실험계획법을 통해 공정인자들의 특성을 평가하였으며, 2차 반응표면모델을 이용한 표면거칠기 예측모델을 개발하였다. 비자성체 재료의 기존 자기연마 공정에서는 재료의 표면에서 자기력이 낮아 표면거칠기의 향상에 효율이 낮은 단점을 가진다. 이를 보완하기 위하여 전자석 배열을 이용한 자기력 테이블을 자기연마 공정에 적용하여 비자성체 표면의 자기력을 향상시킬 수 있었다. 이러한 시스템을 제 2세대 자기연마라 일컫고, 실험계획법에 따른 공정 인자 평가 결과, 자기력 테이블의 전자석 세기가 AZ31B 평판의 표면 거칠기 향상에 가장 큰 영향을 가지고 있음을 확인했다. 또한 자기력 테이블과 공구의 회전속도에 따른 반응표면모델을 개발함으로써 마그네슘 자기연마 공정의 효율성을 높일 수 있었다.

A Study on Pressure Distribution for Uniform Polishing of Sapphire Substrate

  • Park, Chul jin;Jeong, Haedo;Lee, Sangjik;Kim, Doyeon;Kim, Hyoungjae
    • Tribology and Lubricants
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    • 제32권2호
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    • pp.61-66
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    • 2016
  • Total thickness variation (TTV), BOW, and surface roughness are essential characteristics for high quality sapphire substrates. Many researchers have attempted to increase removal rate by controlling the key process parameters like pressure and velocity owing to the high cost of consumables in sapphire chemical mechanical polishing (CMP). In case of the pressure approach, increased pressure owing to higher deviation of pressure over the wafer leads to significant degradation of the TTV. In this study, the authors focused on reducing TTV under the high-pressure conditions. When the production equipment polishes multiple wafers attached on a carrier, higher loads seem to be concentrated around the leading edge of the head; this occurs because of frictional force generated by the combination of table rotation and the height of the gimbal of the polishing head. We believe the skewed pressure distribution during polishing to be the main reason of within-wafer non-uniformity (WIWNU). The insertion of a hub ring between the polishing head and substrate carrier helped reduce the pressure deviation. Adjusting the location of the hub ring enables tuning of the pressure distribution. The results indicated that the position of the hub ring strongly affected the removal profile, which confirmed that the position of the hub ring changes the pressure distribution. Furthermore, we analyzed the deformation of the head via finite element method (FEM) to verify the pressure non-uniformity over the contact area Based on experiment and FEM results, we determined the optimal position of hub ring for achieving uniform polishing of the substrate.

Sr-Ferrite와 GC를 이용한 자기연마재 개발 (Development of the Magnetic Abrasive Using Sr-Ferrite and GC)

  • 윤여권;김상백;김희남
    • 한국안전학회지
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    • 제26권2호
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    • pp.13-19
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    • 2011
  • The magnetic polishing is the useful method to finish using magnetic power of magnet. That method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Sr-Ferrite. In this development, abrasive grain GC used to resin bond fabricated low temperature. And Sr-Ferrite of magnetic abrasive powder fabricated that Sr-Ferrite was crused into 200 mesh. The XRD analysis result show that only GC abrasive and Sr-Ferrite crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it is found that GC abrasive and Sr-Ferrite were strong bonding with each other by bond. The magnetic polishing is performed by polishing the surface of pipe by attracting magnetic abrasives with magnetic fields. This can be widely applied for finishing machinery fabrications such as various pipes and for other safety processes. In this paper, we could have investigated in to the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

탈이온수의 압력과 정제된 $N_2$가스가 ILD-CMP 공정에 미치는 영향 (Influence of DI Water Pressure and Purified $N_2$Gas on the Inter Level Dielectric-Chemical Mechanical Polishing Process)

  • 김상용;이우선;서용진;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제13권10호
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    • pp.812-816
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    • 2000
  • It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified $N_2$(P$N_2$)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P$N_2$gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P$N_2$gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

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슬러리와 패드변화에 따른 텅스텐 플러그 CMP 공정의 최적화 (An Optimization of Tungsten Plug Chemical Mechanical Polishing(CMP) using the Different Sets of Slurry and Pad)

  • 김상용;서용진;이우선;이강현;장의구
    • 한국전기전자재료학회논문지
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    • 제13권7호
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    • pp.568-574
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    • 2000
  • We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

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사파이어 웨이퍼 연마공정에서의 표면처리효과에 대한 X-선 회절분석 (X-ray diffraction analysis on sapphire wafers with surface treatments in chemical-mechanical polishing process)

  • 김근주;고재천
    • 한국결정성장학회지
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    • 제11권5호
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    • pp.218-223
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    • 2001
  • 수평 Bridgman 방법으로 성장한 사파이어 인고트를 절단 연마한 후, 사파이어 결정기판의 표면을 우레탄 천 위에서 실리카 졸을 사용하여 폴리싱하였다. 표면의 결정성을 X-선 회절을 통하여 조사하였으며, 2중 결정회절에 의한 반치폭은 200~400 arcsec을 가지며, 결정 인고트의 절편화 또는 양면 연삭 연마에 따른 잔류응력에 의한 표면에서의 기계적인 스트레스에 의해 결정성이 손상되어진다. 화학-기계적인 폴리싱공정을 수행한 수에 표면처리로 $1,200^{\circ}C$로 4시간 열처리 및 산처리를 연속적으로 수행할 경우 결정성이 반치폭 8.3 arcsec까지 줄어들어 향상됨을 확인하였다.

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자기유변유체 연마공정을 응용한 미세부품의 형상가공 (Farbrication of Repeated 3D Shapes using Magnetorheological Fluid Polishing)

  • 김용재;민병권;이상조;석종원
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.1265-1268
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    • 2005
  • Due to the increase of the need for reliable high density information storage devices, the demand for precise machining of the slider in HDD is rapidly growing. The present fabrication process of slider bears some serious problems such as low yield ratio in mass production, which is mainly caused by inefficient machining processes in shaping camber and crown on the slider. In order to increase slider yield ratio in HDD, a new systematic machining process is proposed and developed in this work. This new machining process includes the use of magnetorheological (MR) fluid, a smart polishing material generally used for ultra-fine surface finishing of micro structures. It is shown that the process proposed in this work enables to make camber and crown pattern in the scale of few tens of nanometers. Experiment results shows that the MR polishing can be also used for shaping process of micro structures.

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