• Title/Summary/Keyword: Measurement Current Source

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Measuring and Improving Method the Performance of E-Commerce Websites (전자상거래 웹사이트의 성능 측정 및 향상 방법)

  • Park, Yang-Jae
    • Journal of Digital Convergence
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    • v.15 no.9
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    • pp.223-230
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    • 2017
  • In the current wireless Internet environment, using a mobile device to quickly access a web site is closely related to measuring the performance of a website. When accessing a website, the user has a long time to access the website and has no access to the website.In this case, the performance of the web site should be improved by measuring and analyzing the performance of the connection delay due to a problem of the web site.Among the performance measurement factors of Web sites, Web page loading time is a very important factor for a successful service business in the situation where most of e-commerce business is being developed as a web-based service.An open source tool was analyzed to analyze the performance of the e-commerce web page to present problems, software optimization methods and hardware optimization methods. Applying two optimization methods to suit the environment will enable stable and e-commerce websites.

Safety-Related Bus Voltage Variation during Large Induction Motor Start-up in 1400MW Light Water Reactor Type Nuclear Power Plant (1400MW급 경수로형 원자력발전소의 대용량 유도전동기 시동시 안전관련 모선 전압 변동)

  • Lee, Cheoung Joon;Kim, Chang Kook;Noh, Young Seok;Joo, Young Hwan
    • Plant Journal
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    • v.12 no.4
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    • pp.37-43
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    • 2016
  • Power system which provides electricity to the accident mitigation load for nuclear power plant should be verified to maintain the proper voltage level under the various loading and source conditions. For this purpose, it was needed to collect the voltage data of safety related buses during operation of the Reactor Coolant Pump(RCP) motor and Component Cooling Water Pump(CCWP) motor, respectively, under the certain loading condition of the plant. The data (such as, voltage, current, power factor) collected from actual measurement were used to modify the existing ETAP model and then the reanalysis was conducted to simulate the testing conditions. Through these actual measurement and analysis, it ensures that the existing electrical system analysis including assumptions and methods was conducted properly. Finally, the voltage of safety related buses was not dropped below the acceptable level, and the discrepancy between two results was within the limit.

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New On-Chip RF BIST(Built-In Self Test) Scheme and Circuit Design for Defect Detection of RF Front End (RF Front End의 결함 검출을 위한 새로운 온 칩 RF BIST 구조 및 회로 설계)

  • 류지열;노석호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.2
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    • pp.449-455
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    • 2004
  • This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.

Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate (HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성)

  • Hong, S.H.;Jeon, H.S.;Han, Y.H.;Kim, E.J.;Lee, A.R.;Kim, K.H.;Hwang, S.L.;Ha, H.;Ahn, H.S.;Yang, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.1
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    • pp.6-10
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    • 2009
  • In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

Characteristics of Partial Discharge Under HVDC in SF6 Gas (SF6 가스 중 직류 고전압 하에서 부분방전 특성)

  • Kim, Min-Su;Kim, Sun-Jae;Jeong, Gi-Woo;Jo, Hyang-Eun;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.4
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    • pp.238-243
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    • 2014
  • This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on LabVIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 ${\mu}F$). The gap between the electrodes is 3 mm, and the $SF_6$ gas was set at 5 bar. PD pulses were detected by a 50 ${\Omega}$ non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ~ 35 ns for the POC, 0.7 MHz ~ 1.7 MHz, below 0.6 MHz and 10 ns ~ 40 ns and 60 ns ~125 ns for the POE, below 0.1 MHz and 135 ns ~ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.

Characteristics of MOSFET Devices with Polycrystalline-Gallium-Oxide Thin Films Grown by Mist-CVD (Mist-CVD법으로 증착된 다결정 산화갈륨 박막의 MOSFET 소자 특성 연구)

  • Seo, Dong-Hyun;Kim, Yong-Hyeon;Shin, Yun-Ji;Lee, Myung-Hyun;Jeong, Seong-Min;Bae, Si-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.427-431
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    • 2020
  • In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga2O3) thin films grown by mist-CVD. A 500~800 nm-thick Ga2O3 film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga2O3 layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (ID) exceeded 1 mA at a drain voltage (VD) of 20 V. Electron mobility of the β-Ga2O3 channel was determined from maximum transconductance (gm), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga2O3 thin films.

Stratified features in Paldang lake considering induced density currents and seasonal thermal effect (유입하천 밀도와 계절별 수온을 고려한 팔당호 성층 해석)

  • Choi, Suin;Kim, Dongsu;Seo, Ilwon
    • Journal of Korea Water Resources Association
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    • v.57 no.2
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    • pp.99-110
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    • 2024
  • Paldang Reservoir serves as a crucial water source for the metropolitan area, and national efforts are focused on water quality management. The region near Paldang Dam, where the water intake facility with the greatest depth is located, experiences vertical stratification during the summer. It has been challenging to definitively classify whether this stratification is caused by density currents or summer temperatures. This study aimed to differentiate and analyze stratification due to density currents and temperature variations at key locations in the Paldang Reservoir through vertical water quality measurements. The results allowed us to distinguish between density current and temperature-induced stratification. We found that density currents are primarily caused by temperature differences among inflowing rivers, with flow velocity significantly influencing their persistence. Additionally, based on a combination of monsoon and non-monsoon season characteristics, we classified Paldang Reservoir into regions with distinct river and lake traits.

Introduction of Kjeldahl Digestion Method for Nitrogen Stable Isotope Analysis (δ15N-NO3 and δ15NNH4) and Case Study for Tracing Nitrogen Source (Kjeldahl 증류법을 활용한 질산성-질소 및 암모니아성-질소 안정동위원소비 분석 및 질소오염원 추적 사례 연구)

  • Kim, Min-Seob;Park, Tae-Jin;Yoon, Suk-Hee;Lim, Bo-La;Shin, Kyung-Hoon;Kwon, Oh-Sang;Lee, Won-Seok
    • Korean Journal of Ecology and Environment
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    • v.48 no.3
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    • pp.147-152
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    • 2015
  • Nitrogen (N) loading from domestic, agricultural and industrial sources can lead to excessive growth of macrophytes or phytoplankton in aquatic environment. Many studies have used nitrogen stable isotope ratios to identify anthropogenic nitrogen in aquatic systems as a useful method for studying nitrogen cycle. In this study to evaluate the precision and accuracy of Kjeldahl processes, two reference materials (IAEA-NO-3, N-1) were analyzed repeatedly. Measured the ${\delta}^{15}N-NO_3$ and ${\delta}^{15}N-NH_4$ values of IAEA-NO-3 and IAEA-N-1 were $4.7{\pm}0.2$‰ and $0.4{\pm}0.3$‰, respectively, which are within recommended values of analytical uncertainties. Also, we investigated spatial patterns of ${\delta}^{15}N-NO_3$ and ${\delta}^{15}N-NH_4$ in effluent plumes from a waste water treatment plant in Han River, Korea. ${\delta}^{15}N-NO_3$ and ${\delta}^{15}N-NH_4$ values are enriched at downstream areas of water treatment plant suggesting that dissolved nitrogen in effluent plumes should be one of the main N sources in those areas. The current study clarifies the reliability of Kjeldahl analytical method and the usefulness of stable isotopic techniques to trace the contamination source of dissolved nitrogen such as nitrate and ammonia.

Development of High-Sensitivity and Entry-Level Nuclide Analysis Module (고감도 보급형 핵종 분석 모듈 개발)

  • Oh, Seung-Jin;Lee, Joo-Hyun;Lee, Seung-Ho
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.515-519
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    • 2022
  • In this paper, we propose the development of a high-sensitivity entry-level nuclide analysis module. The proposed measurement sensor module consists of an electronic driving circuit for nuclide analysis resolution, prototype production with nuclide analysis function, and GUI development applied to prototypes. The electronic part driving circuit for nuclide analysis resolution is divided into nuclide analysis resolution process by the electronic part driving circuit block diagram, MCU circuit design used for radiation measurement, and PC program design for Spectrum acquisition. Prototyping with nuclide analysis function is made by adding a 128×128 pixel OLED display, three buttons for operation, a Li-ion battery, and a USB-C type port for charging the battery. The GUI development department applied to the prototype develops the screen composition such as the current time, elapsed measurement time, total count, and nuclide Spectrum. To evaluate the performance of the proposed measurement sensor module, an expert witness test was conducted. As a result of the test, it was confirmed that the calculated result by applying the resolution formula to the Spectrum (FWHM@662keV) obtained using the Cs-137 standard source in the nuclide analysis device had a resolution of 17.77%. Therefore, it was confirmed that the nuclide analysis resolution method proposed in this paper produces improved performance while being cheaper than the existing commercial nuclide analysis module.

Optical Current Sensors with Improved Reliability using an Integrated-Optic Reflective Interferometer (반사형 간섭계를 이용하여 신뢰성을 향상시킨 광전류센서)

  • Kim, Sung-Moon;Chu, Woo-Sung;Oh, Min-Cheol
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.5
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    • pp.17-23
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    • 2017
  • Optical current sensors are suitable for operation in high voltage and high current environments such as power plants due to they are not affected by electromagnetic interference and have excellent insulation characteristics. However, as they operate in a harsh environment such as large temperature fluctuation and mechanical vibration, high reliability of the sensor is required. Therefore, many groups have been working on enhancing the reliability. In this work, an integrated optical current sensor incorporating polarization-rotated reflection interferometer is proposed. By integrating various optical components on a single chip, the sensor exhibits enhanced stability as well as the solution for low-cost optical sensors. Using this, we performed the characterization for the actual field application. By using a large power source, the current of 0.3 kA~36 kA was applied to the photosensor and the linear operation characteristics were observed. The error of the sensor was within $0{\pm}.5%$. Even when operating for a long time, the error range of the sensor was kept within $0{\pm}.5%$. In addition, the measurement of the frequency response over the range of 60 Hz to 10 kHz has confirmed that the 3-dB frequency band of the proposed OCT is well over 10 kHz.