• Journal of Hydrogen and New Energy
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• v.24 no.3
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• pp.200-205
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• 2013

The separation of hydrogen depends on porosity, diffusivity and solubility in permeation membrane. Dense membrane is always showing a solution diffusion mechanism but porous membrane is not showing. Therefore, porous membrane has a good hydrogen flux due to pore is carried out transferred media. This mechanism is named as the Knudsen diffusion. Hydrogen molecules or hydrogen atoms are diffused along pore that is a mean free path. In this study, complex layer hydrogen permeation membrane was fabricated by hot press process. And then, it was evaluated and calculated to relationship between hydrogen permeability and membrane porosity.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.144-149
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• 2013

We use Memory function to examine the thermal conductivity as a function of the temperature in single-walled carbon nanotube (SWNT). We determine the Umklapp, normal and SWNT-substrate phonon scattering rate from the computed inverse spin relaxation time. Thermal conductivity increased as the diameter increased when we assumed that the zigzag (10,0) transition was a more dominant phonon scattering than the (9,0) transition.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.489-493
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• 2004

The electrical property of MMC is essentially important to some applications such as power transmission lines and cables, electronic and electrical components as well as electromagnetic shielding equipments. The behavior of electrical resistivity of $SiC_{w}/Al$ alloy composites under as-extruded and annealed conditions has been investigated within the temperature range from room temperature to $450^{\circ}C$. It can be seen that within entire temperature range, the electrical resistivity of composites was higher than that of an unreinforced matrix alloy under the same condition of either as-extrusion or annealing. The temperature dependence of both exhibited positive incline like a typical metal. The variation of electrical resistivity of an unreinforced matrix alloy with temperature from ambient temperature to $450^{\circ}C$ was nearly monotonous, while those of composites increased monotonously at low temperature and rose to a high level after about $250^{\circ}C or 275^{\circ}C$. The difference of these temperature dependences on electrical resistivity can be interpreted as qualitatively the interfaces of $SiC_{w}$ fibers and matrix, where act as nucleation sites.

• New & Renewable Energy
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• v.2 no.2 s.6
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• pp.75-80
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• 2006

The effective thermal conductivities of $Mm(La_{0.6-0.8})Ni_{4.0}Co_{0.6}Mn_{0.2}Al_{0.2}$ [TL-492] with hydrogen and helium have been examined. Experiment results show that pressure has great influence on effective thermal conductivity in low pressure range [below 0.5 MPa]. And that influence decreases rapidly with increase of gas pressure. The reason is at low pressure, the mean free path of gas becomes greater than effective thickness of gas film which is important to the heat transfer mechanism in this research. And, carbon fibers have been used to try to enhance the poor thermal conductivity of TL-492. Three types of carbon fibers and three mass fractions have been examined and compared. Naturally, the highest effective thermal conductivity has been reached with carbon fiber which has highest thermal conductivity, and highest mass fraction. This method has acquired 4.33 times higher thermal conductivity than pure metal hydrides with quite low quantity of additives, only 0.99 wt% of carbon fiber. This is a good result comparing to other method which can reach higher effective thermal conductivity but needs much higher mass fraction of additives too.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.10
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• pp.820-826
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• 2009

The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.496-501
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• 2007

Recently, as MEMS and NEMS devices have been widely used in the various engineering applications, the characteristics of nanoscale systems are investigated in the limelight. However, as opposed to a macroscale system, the identification of the state of nanoscale systems is extremely hard because they can include only the order of $10^{3}\sim10^{5}$ molecules, which requires highly expensive and accurate experimental apparatus for an investigation. This limitations make the study on nanoscale system use computer simulations. Therefore, it is strongly required to identify the state of nanoscale system simulated in computer simulation. In these molecular dynamics(MD) study, we suggest that the potential energy of individual molecule can be used as criterion for defining the state of clusters or nanoscale systems. In addition, we compared the phase state from the potential energy with one from the radial distribution function(RDF) for verification. The comparison showed that the intermolecular potential energy can be used as a criteria distinguishing the phase state of nanoscale systems (This study will be published soon in the KSME transaction of the section B).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.629-629
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• 2013

Graphene is a carbon based material and it has intriguing features, such as phenomenally strong, thin, flexible, transparent and conductive, those make it attractive for a broad range of applications.Unfortunately, graphene is extremely sensitive to contamination. When we fabricate graphene devices, electrical properties of graphene are altered [1], and the charge carrier mobility drops accordingly by orders of magnitude. This significant impact on electron mobility occurs because any surrounding medium could act as a dominant source of extrinsic scattering, which effectively reduces the mean free path of carriers [2,3]. The dominant contaminant is generated through fabrication stage by polymethyl methacrylate (PMMA) [4], or photo resist (PR). Surface contamination by these residues has long been a critical problem in probing graphene's intrinsic properties. If we clearly solve this problem, we can get highly performed graphene devices. Here, we will report on graphene cleaning process by Induced Coupled Plasma (ICP). We demonstrated how much decomposition of residue impact on improving electrical properties of graphene.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Tribology and Lubricants
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• v.30 no.1
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• pp.15-20
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• 2014

A more accurate expression for effective viscosity is obtained using a linear regression of the data from Fukui-Kaneko's model, which are obtained through numerical calculations based on the linearized Boltzmann equation. Veijola and Turowski's expression is adopted as a base function for effective viscosity. The four coefficients in that equation are optimized, and sensitivity analysis is conducted for these coefficients. The results show that the coefficient for the first-order Knudsen number is the most accurate, whereas the coefficient in the exponential of the Knudsen number is the least accurate compared with Fukui-Kaneko's results. The expression for effective viscosity is accurate within 0.02% rms of Fukui-Kaneko's results for the inverse Knudsen numbers from 0.01 to 100 and surface accommodation coefficients ranging from 0.7 to 1.