• 한국환경농학회지
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• 제27권4호
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• pp.349-355
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• 2008

섬진강 하구 시설재배지의 염류집적심화의 원인을 구명하기 위해 경남 하동군 목도리 시설재배단지 토양의 염류집적 특성과 주요 관개용수인 지하수의 수질특성, 그리고 시비실태를 조사하여 다음과 같은 결론을 얻었다. 토양 내 염류농도가 우리나라 시설재배지 평균에 비해 높았으며, 특히 나트륨과 염소의 함량이 높게 검출되어 염에 대해 민감한 작목에 대해서는 유묘기에 염해발생가능성이 있을 것으로 판단되었다. 지역에서 주로 사용되고 있는 천층 지하수는 높은 농도의 염(평균 EC $2.6\;dS\;m^{-1}$)과 나트륨과 염소를 포함하고 있었다. 특히 수막시설 운영으로 관개용수의 사용량이 급격하게 증가하는 동절기 관개용수 중 염 농도는 급격하게 증가되고 있어 이시기 토양 내 염농도의 상승과 작물에 대한 염해유발 가능성을 가지고 있었다. 이외에도 지역에서 재배되고 있는 모든 작목에 대해 추천시비량 이상의 과량의 화학비료와 축산분뇨퇴비가 시용되고 있어 표층토의 염류집적을 가속화시키는 것에 기여하였다. 해당 지역의 염류피해를 경감하기 위해서는 일차적으로 양질의 관개용수의 확보와 시비량 저감을 위한 노력이 필요할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• 한국진공학회지
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• 제16권5호
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• pp.359-365
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• 2007

본 논문에서는 zinc oxide (ZnO)와 gallium이 도핑 된 zinc oxide (GZO)를 이용하여 radio frequency (RF) magnetron sputtering 방법에 의해 상온에서 제작된 bottom-gate 박막 트랜지스터의 특성을 평가하고 분석하였다. 게이트 절연층 물질로서 새로운 물질을 사용하지 않고 열적 성장된 $SiO_2$를 사용하여 게이트 누설 전류를 수 pA 수준까지 줄일 수 있었다. ZnO와 GZO 박막의 표면 제곱평균제곱근은 각각 1.07 nm, 1.65 nm로 측정되었다. 그리고 ZnO 박막은 80% 이상, GZO 박막은 75% 이상의 투과도를 가지고 있었고, 박막의 두께에 따라 투과도가 달라졌다. 또한 두 시료 모두 (002) 방위로 잘 정렬된 wurtzite 구조를 가지고 있었다. 제작된 ZnO 박막 트랜지스터는 2.5 V의 문턱 전압, $0.027\;cm^2/(V{\cdot}s)$의 전계효과 이동도, 104의 on/off ratio, 1.7 V/decade의 gate voltage swing 값들을 가지고 있었고, enhancement 모드 특성을 가지고 있었다. 반면에 GZO 박막 트랜지스터의 경우에는 -3.4 V의 문턱 전압, $0.023\;cm^2/(V{\cdot}s)$의 전계효과 이동도, $2{\times}10^4$의 on/off ratio, 3.3 V/decade의 gate voltage swing 값들을 가지고 있었고, depletion 모드 특성을 가지고 있었다. 우리는 기존의 ZnO와 1wt%의 Ga이 도핑된 ZnO를 이용하여 두 가지 모드의 트랜지스터 특성을 보이는 박막 트랜지스터를 성공적으로 제작하고 분석하였다.

• Journal of Preventive Medicine and Public Health
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• 제27권1호
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• pp.59-73
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• 1994

The purpose of this study is to experiments the environmental conditions and the adaption of the human body in the vinyl house. The study was done in spring and winter and experimental clothes were used working clothes in the vinyl house. The results are as follows. 1. Environmental Conditions In the spring season, the indoor air temperature was $27.4{\pm}3.7^{\circ}C$ and the outdoor air temperature was $14.4{\pm}2.7^{\circ}C$. In the winter season, the indoor air temperature was $18.3{\pm}4.8^{\circ}C$ and the outdoor air temperature was $7.6{\pm}2.5^{\circ}C$ on the average. 2. Skin Temperature In the spring season, the mean skin temperatures indoor and outdoor were $33.81{\pm}0.7^{\circ}C\;and\;31.57{\pm}0.8^{\circ}C$ respectively, a difference of $2.24^{\circ}C$. In the winter season, they were $31.95{\pm}1.93^{\circ}C\;and\;29.86{\pm}0.55^{\circ}C$ respectively, a difference of $2.09^{\circ}C$. 3. Clothing Climate In the spring season, the temperature and humidity in the inner layer of clothing were $34.77{\pm}0.80^{\circ}C\;and\;70.75{\pm}1.65%$ indoor, $31.9{\pm}0.52^{\circ}C\;and\;51.9{\pm}3.70%$ outdoor respectively. In the winter season, those were $32.52{\pm}1.04^{\circ}C\;and\;64.65{\pm}3.68%$ indoor, $30.27{\pm}0.96^{\circ}C\;and\;45.07{\pm}2.68%$ outdoor respectively. 4. Physiological Factors Body temperature increased slightly and the pulse rate also rises, but blood pressure decreased a little with the rise of environmental temperature both in the spring and winter seasons. 5. Psychological Factors Thermal sensation in the spring season was expressed as 'slightly warm' or 'warm' indoor and as 'neutral' in the open air, while in the winter it was expressed as 'neutral' or 'slightly warm' outdoor the house and as 'cold' in the open air. Comfort sensation was characterized as 'uncomfortable' or 'slightly uncomfortable' indoor both in the spring and winter seasons, but in the open air it was characterized as 'comfortable' in the spring and as 'slightly uncomfortable' in the winter.

• 생물환경조절학회지
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• 제12권2호
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• pp.72-76
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• 2003

동계의 노지 및 무가온 하우스 재배시에 통기성 간이 피복재의 효과적인 보온방법과 GA$_3$ 처리로 일상추의 생육 촉진효과를 구명하기 위하여 공시재료를 청치마상추와 적치마상추로 하였다. 농PO계 필름하우스 내에서 ‘파스라이도’ 피복재를 이용하여 10월 26일부터 처리한 직접피복(1), 11월 5일부터 처리한 직접피복(2) 및 터널피복 후, 수확 일주일 전에 GA$_3$를 식물체에 엽면살포하여 그 효과를 조사하였다. 평균기온과 상대습도는 대체로 직접＋터널피복, 직접피복 및 대조구의 순으로 높았다. 청치마상추와 적치마상추의 생육은 대체로 직접＋터널피복, 직접피복(1), 직접피복(2), 터널피복, 대조구의 순이었고, 또 GA$_3$처리는 생육을 촉진시켰다. 엽록소 함량은 대조구, 터널피복, 직접피복(2), 직접피복(1), 직접＋터널피복의 순으로 높았다 GA$_3$천리에 의해서 엽록소의 함량은 반대로 저하하였다. 청치마상추와 적치마상추의 생체중은 직접＋터널피복, 직접피복(1). 직접피복(2), 터널피복, 대조구의 순이었고 건물중도 같은 경향이었다. GA$_3$처리는 생체중과 건물중을 약간 증가시켰다. 그러나 대조 구간에 비교한 결과 적치마상추의 생체중과 건물중이 청치마상추보다 낮았다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.188-188
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• 2012

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 센서학회지
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• 제29권1호
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• 한국초지조사료학회지
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• 제41권3호
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• pp.183-188
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• 2021

The increase in temperature due to climate warming is predicted to affect crop yields in the future. Until now, various types of OTC (open top chamber) that simulate the future climate condition have been developed and used to study the effect of temperature increase due to global warming on maize growth. However, in most OTCs, high equipment and maintenance costs were required to artificially increase the temperature. This study was carried to develop a cost-effective and simple OTC suitable for climate warming experiments for forage maize. Three octagonal OTCs with a height of 3.5 m × a diameter of 4.08 m and a partially covered top were constructed. The lower part of OTC covered film was opened at a height of 26 cm (OTC-26), 12 cm (OTC-12) from the ground surface, or not opened (0 cm, OTC-0). Mean air temperatures during the daytime on a sunny day in OTC-0, OTC-12 and OTC-26 increased to 3.23℃, 1.33℃, and 0.89℃, respectively, compared to the ambient control plot. For a pilot test, forage maize, 'Gwangpyeongok' was grown at OTCs and ambient control plots. As a result, in the late maize vegetative growth phase (July 30), the plant height was increased more than 45% higher than the ambient control plot in all OTC plots, and the stem diameter also increased in all OTC plots. These results indicate that it is possible to set the temperature inside the OTC by adjusting the opening height of the lower end of the OTC, and it can be applied to study the response of forage maize to elevated temperature. An OTC, with its advantages of energy free, low maintenance cost, and simple temperature setting, will be helpful in studying maize growth responsiveness to climate warming in the future.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.