• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.247-252
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• 2003

In this paper, we made four types of metal particle $Al_2$O$_3$ barrier reactors with and without dielectric of BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier to investigate NOx removal characteristic and the effect of dielectric on Nox removal. And Nox removal rate is measured when sludge pellets are put at down stream of plasma reactor. Nox removal rate in the reactor with $Al_2$O$_3$ barrier is much better than that in the reactor without $Al_2$O$_3$ barrier, Nox removal rate is not so good in metal particle-Al$_2$O$_3$ barrier reactor with BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier, however, Nox removal rate is about 40% in metal particle-Al$_2$O$_3$ barrier reactor with TiO$_2$. The most of NO is conversed to NO$_2$ in these kind of reactor. When sludge pellets are put at down stream of plasma reactor, Nox removal rate is greatly improved up to 90%. It indicates that sludge pellets have great effect on the NO$_2$ removal and the improvement of Nox removal rate, however, dielectric materials between metal particle and $Al_2$O$_3$ barrier have not effect. Organic materials included in sludge may react with NO$_2$ and ozone so that Nox removal rate is greatly improved.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.489-493
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• 2001

Big cities in Japan have serious problems due to the shortage of new reclaimed land for municipal wastes. If harmful heavy metals such as cadmium, lead, copper and etc. are contained in the municipal waste combustion residues, they are not able to fill up according to the environmental law in Japan. In this study, the removal of heavy metals in the fly ash (EP ash) was dealt with chloridizing vaporization method. EP ash as a non-hazardous materials is utilized as covering materials, road bed, and building materials.

• 한국재료학회지
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• 제16권12호
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• 한국잠사곤충학회지
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• 제42권2호
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• pp.78-82
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• 2000

In this study, a comparative removal of chlorine from aqueous solutions of mulberry leaf powder(MLP) and activated carbon(AC) was investigated. The chlorine removal capacities of MLP and AC were shown as a function of contact time, pH and initial chlorine concentration. Optimum contact time and removal pH value of MLP were determined as 2 hr and pH 10, respectively. Chlorine removal increased with increasing initial chlorine concentration up to 1.3g/L. Both Langmuir and Freundlich adsorption models were suitable for describing the short-term removal of chlorine by MLP and AC. According to Freundlich adsorption isotherms, the maximum removal capacity of MLP(0.264 mg Cl$_2$/mg) was nearly two times greater than that of AC(0.56 mg Cl$_2$/mg). These results suggested that MLP might potentially be used as an alternative to traditional water treatment materials for removal of residual chlorine in drinking water or process wastewater.

• Tribology and Lubricants
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• 제37권6호
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• Carbon letters
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• 제5권4호
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• pp.186-190
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• 2004

In this work, a nickel metal (Ni) electroplating on the activated carbon fiber (Ni/ACFs) surfaces was carried out to remove the toxic hydrogen chloride (HCl) gas. The surface properties of the treated ACFs were determined by using nitrogen adsorption isotherms at 77 K, SEM, and X-ray diffraction (XRD) measurements. HCl removal efficiency was confirmed by a gas-detecting tube technique. As a result, the nickel metal contents on the ACF surfaces were increased with increasing the plating time. And, it was found that the specific surface area or the micropore volume of the ACFs studied was slightly decreased as increasing the plating time. Whereas, it was revealed that the HCl removal efficiency containing nickel metal showed higher efficiency values than that of untreated ACFs. These results indicated that the presence of nickel metal on the ACF surfaces played an important role in improving the HCl removal over the Ni/ACFs, due to the catalytic reactions between nickel and chlorine.

• 한국재료학회지
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• 제16권2호
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• pp.75-79
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• 2006

The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.

• 한국정밀공학회지
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• 제30권12호
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• pp.1227-1235
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• 2013

Ceramic materials are classified by oxide, nitride and carbide material and have high brittleness, strength and hardness. Ceramic materials are strong in compression but weak in shearing and tension. This review paper has focused on technology trends and mechanism analysis of ceramics removal machining. The ceramic materials have superior mechanical, physical and chemical properties, but it is very hard to machining and the use of ceramics has been limited because of high strength and brittleness. In this paper, technology trends of ceramic removal-machining was introduced for types of machining technology, abrasive machining, cutting process, laser machining and so on.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.87-91
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• 2021

Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.