• 제목/요약/키워드: Material characterization

검색결과 1,706건 처리시간 0.043초

Pultruded GFRP box beams: State-of-the-art review on constituents and structural behavior

  • Mozhdeh Dehshirizadeh;Abolfazl Eslami;Mehdi Khodadad Sar-Yazdi;Hamid R. Ronagh
    • Structural Engineering and Mechanics
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    • 제90권2호
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    • pp.127-142
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    • 2024
  • In recent decades, pultruded glass fiber-reinforced polymer (GFRP) members including those of box sections have attracted the attention of researchers. Nevertheless, the lack of uniform and consistent material properties, simplified design methods, and practical design codes have so far been the main barrier for field applications. Consequently, this paper highlights the existing knowledge concerning the flexural behavior of pultruded GFRP profiles and their failure modes. In particulate, it reviews the most commonly accepted design expressions and code provisions addressing the flange local buckling of pultruded GFRP box beams as the most likely failure mode. In addition, the material characterization of GFRP sections is described in detail along with the standard test methods to quantify the material characterization of GFRP laminates. It is shown that the critical flange local buckling stresses of pultruded GFRP box beams can be predicted with reliable accuracy using the expressions promulgated by ASCE (1984) (in which the flange plates are considered simply-supported at web-flange junction) and EUR 27666. The expressions stipulated in ASCE (2010) highly overestimates the critical flange local buckling stresses of GFRP box beams resulting in unconservative predictions.

Pseudo MOSFET을 이용한 Nano SOI 웨이퍼의 전기적 특성분석 (Electrical Characterization of Nano SOI Wafer by Pseudo MOSFET)

  • 배영호;김병길;권경욱
    • 한국전기전자재료학회논문지
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    • 제18권12호
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    • pp.1075-1079
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    • 2005
  • The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

Characterization of nano-structure pyrolytic char for smart and sustainable nanomaterials

  • N. K. Karthikeyan;S. Elavenil
    • Advances in nano research
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    • 제16권1호
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    • pp.53-69
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    • 2024
  • Advancements in the technology of building materials has led to diverse applications of nanomaterials with the aim to monitor concrete structures. While there are myriad instances of the use of nanoparticles in building materials, the production of smart nano cement-composites is often expensive. Thereupon, this research aims to discover a sustainable nanomaterial from tyre waste using the pyrolysis process as part of the green manufacturing circle. Here, Nano Structure Tyre-Char (NSTC) is introduced as a zero-dimension carbon-based nanoparticle. The NSTC particles were characterized using various standard characterization techniques. Several salient results for the NSTC particles were obtained using microscopic and spectroscopic techniques. The size of the particles as well as that of the agglomerates were reduced significantly using the milling process and the results were validated through a scanning electron microscope. The crystallite size and crystallinity were found to be ~35nm and 10.42%, respectively. The direct bandgap value of 5.93eV and good optical conductivity at 786 nm were obtained from the ultra violet visible spectroscopy measurements. The thermal analysis reveals the presence of a substantial amount of carbon, the rate of maximum weight loss, and the two stages of phase transformation. The FT-Raman confirms the presence of carboxyl groups and a ID/IG ratio of 0.83. Water contact angle around 140° on the surface implies the highly hydrophobic nature of the material and its low surface energy. This characteristic process assists to obtain a sustainable nanomaterial from waste tyres, contributing to the development of a smart building material.

Experimental characterization of a smart material via DIC

  • Casciati, Sara;Bortoluzzi, Daniele;Faravelli, Lucia;Rosadini, Luca
    • Smart Structures and Systems
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    • 제30권3호
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    • pp.255-261
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    • 2022
  • When no extensometer is available in a generic tensile-compression test carried out by a universal testing machine (for instance the model BIONIX from Material Testing Systems (MTS)), the test results only provide the relative displacement between the machine grips. The test does not provide any information on the local behaviour of the material. This contribution presents the potential of an application of Digital Image Correlation (DIC) toward the reconstruction of the behaviour along the specimen. In particular, the authors test a Ni-Ti shape memory alloys (SMA) specimen with emphasis on the coupling of the two measurement techniques.

Characterization of Surface Quality in Orthogonal Cutting of Glass Fiber Reinforced Plastics

  • Choi Gi Heung
    • International Journal of Safety
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    • 제3권1호
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    • pp.1-5
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    • 2004
  • This study discusses frequency analysis based on autoregressive (AR) time series model, and the characterization of surface quality in orthogonal cutting of a fiber-matrix composite materials. A sparsely distributed idealized composite material, namely a glass reinforced polyester (GFRP) was used as workpiece. Analysis method employs a force sensor and the signals from the sensor are processed using AR time series model. The experimental correlations between the fiber pull-out and AR model coefficients are then established.

MEA의 제작 및 특성 평가 (Fabrication and Characterization of MEA)

  • 성락선;박정호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 D
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    • pp.857-859
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    • 2000
  • A planar MEA(Multi-channel Electrode Array) has been developed for monitoring the electrical activity of electrogenic cells in a cell culture by an extracellular recording. The material, fabrication process, characterization of the array, cleaning effect and impedance according to opening size by impedance measurement are described.

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Characterization of Spherical Particles by Light Scattering

  • Sangwook Park;Jungmoon Sung;Taihyun Chang
    • Bulletin of the Korean Chemical Society
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    • 제12권3호
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    • pp.322-328
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    • 1991
  • We have studied a characterization method of accurate size of spherical particles by fitting experimental light scattering profile to the rigorous theoretical scattering function. An efficient software has been developed for computation of the theoretical scattering function and regression analysis. A light scattering instrument has been built and the necessary data acquisition and analysis are carried out by use of a personal computer with an emphasis on the reduction of analysis and time aiming that this study will be extended toward a development of a practical particle sizing apparatus. The performance of the instrument and the software has been evaluated with latex spheres and found to be satisfactory.

MEMS 공정을 이용한 32x32 실리콘 캔틸레버 어레이 제작 및 특성 평가 (Fabrication and Characterization of 32x32 Silicon Cantilever Array using MEMS Process)

  • 김영식;나기열;신윤수;박근형;김영석
    • 한국전기전자재료학회논문지
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    • 제19권10호
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    • pp.894-900
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    • 2006
  • This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.