• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.607-610
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• 2003

The characteristic prediction and analysis of 3-dimensional (3-D) solenoid-type embedded inductors is investigated. The four different structures of 3-D inductor are fabricated by using low-temperature cofired ceramic (LTCC) process. The circuit model parameters of the each building block are optimized and extracted using the partial element equivalent circuit method and HSPICE circuit simulator. Based on the model parameters, predictive modeling is applied for the structures composed of the combination of the modeled building blocks. And the characteristics of test structures, such as self-resonant frequency, inductance and Q-factor, are analyzed. This approach can provide the characteristic conception of 3-D solenoid embedded inductors for structural variations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.926-929
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• 2003

The dissolved oxygen sensor of thick film type was fabricated by screen print method and measured the characteristic, reference electrode used Ag/AgCl, and working electrode used Pt. The devices are continuously powered at potential of $0.7V{\sim}0.8V$ versus Ag/AgCl reference electrode and results indicated that the response characteristic of sensor was $1.002{\mu}A{\sim}19.792{\mu}A$ for thirty seconds. we can know that it is good linearity when compared with of existent dissolved oxygen meter. Therefore sensor fabricated excels sensitivity for dissolved oxygen and will be considered to be applied typically because the price is costly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.383-383
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• 2010

TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using $BCl_3$/Ar inductively coupled plasma system. The etch rate was measured by a depth pro filer. The chemical etching reactions of the TiN surface was investigated X-ray photoelectron spectroscopy.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.210-217
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• 2009

Insulated methods of compact bus duct has been applied a way of coating Epoxy powder. The problem which is caused by degradation during operation is very important in severe environment. Therefore, this study compared and verified many kind of properties ; electrical breakdown by thermal and water aging, v-t characteristic, arc discharge, mechanical properties, bending test and cross cut. Sample D was stable before the $T_g$ to be about $7{\sim}10 %$ decrease in the breakdown test according to temperature change. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical and mechanical characteristic, both sample D and A have excellent capacity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.164-167
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• 1994

In this Study, we design the process of 0.1$\mu\textrm{m}$ gate length CMOS that is immunized against Latch-up, and investigate the characteristic of Latch-up of this device by the design rule of layout. Using TSUPREM4 and MEDICI, we design the device and simulate the variable characteristics of it we could understand that the characteristic of Latch-up is changed for the better by varying the critical factor of it. We also investigate the structure of CMOS that can be immunized against Latch-up.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.189-192
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• 1996

In this paper ZnO Piezoelectric transducers were fabricated as follows, counter electrode (pt 99.9%) was deposited on the sapphire substrates by DC sputter method, and then piezoelectric layer (ZnO 99.999%) was deposited on the counter electrode according to the sputtering parameters, and then top electrode (pt 99.9%) was deposited on the piezoelectric layer by Electron Beam Gun Evaporator. Structural characteristic of deposited ZnO thin film was measured by XRD, SEM. Also, Frequency characteristic of ZnO transducer was analyzed theoretically and practically for input frequencies.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.296-299
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• 2002

The precision blanking of thin sheet metal is important process on production of precision electronic machine parts such as IC leadframe. In the blanking process, the factors that friction coefficient, tool clearance, material properties are the most important factors in the precision blanking process, because these factors affect the sheared face of product, side forces to punch during blanking process and surface condition after blanking process. So, many investigations have been performed. But, the former studies did not take up the characteristic of material. In this paper, in order to investigate the characteristic of blank, such as K(strength coefficient) and n(strain hardening coefficient), on the sheared face of blank and the side force to punch, FE-simulation has been analyzed by means of DEFORM-2D. To obtain input Parameters on FE-simulation, tensile and friction test has been done.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.206-209
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• 2002

The purpose of this research was to find influence of compounding materials on electrical properties of silicone rubber such as tracking characteristic. The tracking characteristic was tested through controlling the ATH, a widely use anti-tracking agent. Regarding the particle size and coupling agent of ATH, compound silicone rubber with ATH of coupling agent and larger diameter showed better anti-tracking properties. It can be included that ATH of coupling agent use vinyl silane, dispose of tracking characteristic was achieve excellant results.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.790-795
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• 1998

Fabrication of inverted staggered power TFT devices and electrical characteristic were investigated. 16 fingers with drain and source electrode of TFT and 100V output voltage were designed successfully. It is observed that as $V_g$ increased, $I_d$ increase exponentially. Because of localized deep states of a-Si, $I_d$ shows irregular variation at low voltage. Output and transfer characteristic showed the same as typical variation. But electrical characteristic strongly depend on the channel length and thickness of silicon nitride and amorphous silicon.