• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.303-307
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• 2007

This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.34-38
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• 2005

Effects of pH level and slurry particle size on material removal rate and planarization of langasite single crystal wafer have been examined. Higher material removal rate was obtained with lower pH level slurries while the planarization was found to be determined by average particle size of colloidal silica slurries. Slurries containing 0.045 ㎛ amorphous silica particles showed the best polishing effect without any scratches on the surface. Effective particle number has a strong effect on the surface planarization and the removal rate, so that the lower effective particle numbers produced low removal rate but the better planarization results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.247-252
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• 2003

In this paper, we made four types of metal particle $Al_2$O$_3$ barrier reactors with and without dielectric of BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier to investigate NOx removal characteristic and the effect of dielectric on Nox removal. And Nox removal rate is measured when sludge pellets are put at down stream of plasma reactor. Nox removal rate in the reactor with $Al_2$O$_3$ barrier is much better than that in the reactor without $Al_2$O$_3$ barrier, Nox removal rate is not so good in metal particle-Al$_2$O$_3$ barrier reactor with BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier, however, Nox removal rate is about 40% in metal particle-Al$_2$O$_3$ barrier reactor with TiO$_2$. The most of NO is conversed to NO$_2$ in these kind of reactor. When sludge pellets are put at down stream of plasma reactor, Nox removal rate is greatly improved up to 90%. It indicates that sludge pellets have great effect on the NO$_2$ removal and the improvement of Nox removal rate, however, dielectric materials between metal particle and $Al_2$O$_3$ barrier have not effect. Organic materials included in sludge may react with NO$_2$ and ozone so that Nox removal rate is greatly improved.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.12
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• pp.2110-2117
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• 2003

A physics-based material removal model in various scales is described and a feature scale simulation for a chemical mechanical polishing (CMP) process is performed in this work. Three different scales are considered in this model, i.e., abrasive particle scale, asperity scale and wafer scale. The abrasive particle and the asperity scales are combined together and then homogenized to result in force balance conditions to be satisfied in the wafer scale using an extended Greenwood-Williamson and Whitehouse-Archard statistical model that takes into consideration the joint distribution of asperity heights and asperity tip radii. The final computation is made to evaluate the material removal rate in wafer scale and a computer simulation is performed for detailed surface profile variations on a representative feature. The results show the dependence of the material removal rate on the joint distribution, applied external pressure, relative velocity, and other operating conditions and design parameters.

• Tribology and Lubricants
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• v.25 no.6
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• pp.404-408
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• 2009

In this paper, the relationship between the material removal rate and the interfacial mechanical properties at particle-surface contact situation, which can be seen in an abrasive machining process using micro/nano-sized particles, was discussed. Friction and stiffnesses were measured experimentally on an atomic force microscope (AFM) by using colloidal probes which have a silica colloid particle in place of tip to simulate a particle-flat surface contact in an abrasive machining process. From the experimental investigation and theoretical contact analysis, the interfacial contact properties such as lateral stiffness of contact, friction, the material removal rate were presented with respect to some of material surfaces and the relationship between the properties as well.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.104-108
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• 2004

The effect of magnetic field was measured on NOx removal for cylinder-wire plasma reactor with magnetic field applied to electric field vertically. Power was supplied to plasma reactor using rotating spark gap switch. Consumption power increased with increasing discharge voltage. When magnetic field was applied to electric field vertically, consumption power was less than that without magnetic field because of lorenz's force. NOx removal rate of plasma reactor with magnetic field were higher, 10-15%, than that of plsama reactor without magnetic field. And NOx removal rate decreased with increasing gas flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.359-361
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• 2006

As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

• Tribology and Lubricants
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• v.32 no.4
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• pp.119-124
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• 2016

In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.