• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.567-568
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• 2006

To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

• Journal of Soil and Groundwater Environment
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• v.17 no.4
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• pp.73-80
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• 2012

The objectives of this research were to study the applicability and limitations of permeable reactive barrier (PRB) for the removal of tetrachloroethylene (PCE) from the groundwater. PRB column tests were conducted using reactive material with Moringa Oleifera Mass - Bentonite (Mom-Bentonite). Most of the PCE in the groundwater was degraded and/or captured (sorpted) in the zone containing activated material (MOM-Bentonite). The removal rate of PCE from the groundwater was 90% and 75% after 30 days and 180 days, respectively. The effect of micro-organisms on the long-term permeability and reactivity of the barrier is not well understood. MOM-Bentonite PRB system in this research has the potential to be developed into an environmentally and economically acceptable technology for the in situ remediation of PCE-contaminated groundwater.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.371-372
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• 2008

• Tribology and Lubricants
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• v.30 no.3
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• pp.139-145
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• 2014

Nowadays, most micro-patterns are manufactured during flow line production. However, a conventional rotary chemical mechanical polishing (CMP) system has a limited throughput for the fabrication of large and flexible electronics. To overcome this problem, we propose a novel linear roll-CMP system for the planarization of large-area electronics. In this paper, we present a statistical analysis on the linear roll-CMP process of copper-clad laminate (CCL) to determine the impacts of process parameters on the material removal rate (MRR) and its non-uniformity (NU). In the linear roll-CMP process, process parameters such as the slurry flow rate, roll speed, table feed rate, and down force affect the MRR and NU. To determine the polishing characteristics of roll-CMP, we use Taguchi's orthogonal array L16 (44) for the experimental design and F-values obtained by the analysis of variance (ANOVA). We investigate the signal-to-noise (S/N) ratio to identify the prominent control parameters. The "higher is better" for the MRR and "lower is better" for the NU were selected for obtaining optimum CMP performance characteristics. The experimental and statistical results indicate that the down force and roll speed mainly affect the MRR and the down force and table feed rate determine the NU in the linear roll-CMP process. However, over 186.3 N of down force deteriorates the NU because of the bending of substrate. Roll speed has little relationship to the NU and the table feed rate does not impact on the MRR. This study provides information on the design parameter of roll-CMP machine and process optimization.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1312-1315
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• 2004

Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.109-112
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• 2003

Recently, CMP (Chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. Also, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.464-467
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• 2005

Among several polishing techniques for micro structures, polishing process using magnetorheological(MR) fluid has advantages in the finishing process of 3-D micro structures because abrasives in the fluid can reach surfaces with complex feature and play their role. Although many researchers have been trying to reveal its polishing mechanism of the MR polishing, it has not been successful because in-situ measurement of state variables is difficult and process parameters are complex. In fact, one of the key factors for applying process control methodologies, such as Run-to-Run control, is the measuring and monitoring of slurry quality because the process strongly depends on the fluid property. Therefore, it is necessary to maintain consistent slurry quality to guarantee the process repeatability. The proposed equipment achieves the longer life cycle of MR fluid and reduces the variability of products. A new method to measure the material removal rate in MRF polishing process is also proposed and discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1296-1300
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• 2004

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.