• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Journal of environmental and Sanitary engineering
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• v.13 no.2
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• pp.88-94
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• 1998

This study was investigated the application of biofiltration using cometabolic process to remediate gaseous toluene that are highly recalcitrant to adsorption, absorption and biodegradation. The investigation was conducted using specially built steel columns packed with granular activated carbon for removal of toluene and G.A.C was also coated with Pseudomonas putida microorganisms by addition of KH$_{2}$PO$_{4}$. The biofilter unit was operated in the condition of dry and 27.5% moisture content at gas loading rate of 12.5 l/min. Gaseous toluene taken from tedlar bag was analyzed by the use of G.C. equipped with F.I.D. detector. The removal efficiency of gaseous toluene was 85% at average inlet concentration of 970 ppm during dry operating condition. For gaseous toluene, 91% removal efficient was obtained at the filter material with moisture content and 97% removal efficiency was obtained with Pseudomonas putida microorganisms at gas loading rate of 12.5 l/min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.93-98
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• 2008

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

• Bulletin of the Korean Chemical Society
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• v.35 no.9
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• pp.2711-2716
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• 2014

The high content of potassium in molasses limits its usage as a raw material for stock feed. Moreover, its high viscosity makes it difficult to develop an efficient removal process. In this study, ion exchange and solvent extraction experiments have been performed to investigate the removal of potassium from a mixture of molasses with water. Cationic exchange resins (AG50W-X8 and Diphonix) showed a high loading percentage of potassium but the occurrence of breakthrough in few bed volumes was a drawback to the industrial application. Among the cationic extractants (D2EHPA, PC 88A, Cyanex 272) tested in this study, saponified PC 88A was found to be the best extractant for the removal of potassium. Batch simulation studies on a three stage counter current extraction confirmed that 85% of potassium was removed from 50 wt % molasses solution in water by using saponifed PC 88A.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.11
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• pp.46-52
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• 2004

CMP (Chemical-Mechanical Polishing) is a process in which both chemical and mechanical mechanisms act simultaneously to produce the planarized wafer. CMP process is an extensive usage and continuing high growth rates in the semiconductor industry. The understanding of the process, however, is much slower. The nature of material removal from the wafer is still undefined and ambiguous. Material removal rate according to the slurry flow rate is also undefined and ambiguous. Thus, in this study, the basic mechanism of material removal rate as slurry flow rate is defined in terms of energy supply and energy loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.66-72
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• 1995

Microstructural features of laser irradiated bulk target which consists of GeSbTe interrmertallic compounds were examined by analytical microscopy. It was found that in addition to vaporization, a liquid expulsion due to laer-material interatction is main contribution of materials removal in the sintered GaSbTe targets, The morphological change is qualitatively discussed in the present article.

• Restorative Dentistry and Endodontics
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• v.47 no.1
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• pp.13.1-13.13
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• 2022

Objectives: This study evaluated the efficacy of 3 reciprocating systems and the effects of 2 instruments for irrigant activation on filling material removal. Materials and Methods: Forty mesiobuccal roots of maxillary molars were prepared up to size 25.06 and obturated. Micro-computed tomography (micro-CT) examination #1 was performed. Teeth were then divided into 4 groups (n = 10), according to the retreatment protocol: (1) manual, (2) Reciproc Blue, (3) WaveOne Gold, and (4) X1 Blue. Micro-CT examinations #2 and #3 were performed after filling removal and repreparation, respectively. Next, all teeth were divided into 2 new groups (n = 20) according to the irrigant activation protocol: XP Clean (XP Clean size 25.02) and Flatsonic (Flatsonic ultrasonic tip). Micro-CT examination #4 was performed after irrigant activation. Statistical analysis was performed with a significance level set at 5%. Results: WaveOne Gold removed a significantly greater amount of filling material than the manual group (p < 0.05). The time to reach the WL was similar for all reciprocating systems (p > 0.05). X1 Blue was faster than the manual group (p < 0.05). Only manual group improved the filling material removal after the repreparation stage (p < 0.05). Both activation protocols significantly improved the filling material removal (p < 0.05), without differences between them (p > 0.05). Conclusions: None of the tested instruments completely removed the filling material. X1 Blue size 25.06 reached the working length in the shortest time. XP Clean and Flatsonic improved the filling material removal.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.95-96
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.546-549
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• 2003

This paper was shown removal characteristic of escherichia coli for discharge tube with globular $SiO_2$. At the result of the removal characteristic experiments of escherichia coli using the discharge tube with globular $SiO_2$, because the electric field is also increased when input voltage is increased, the removal characteristic of escherichia coli was appeared relation connection to input voltage. If a passing number of test water in discharge tube is increased, the removal ratio of escherichia coli is increased because passing number of electric field section is increased. When diameter of globular $SiO_2$ is increased, the removal time of escherichia coli is to be decreased because dielectric polalization of globular dielectric($SiO_2$), Also, the removal ratio of escherichia coli of the discharge tube with globular dielectric($SiO_2$) is appeared higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$).