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The Effect of Slurry flow Rate and Temperature on CMP Characteristic  

정영석 (부산대학교 정밀기계공학과)
김형재 (부산대학교 정밀기계공학과)
최재영 (부산대학교 정밀기계공학과)
정해도 (부산대학교 정밀정형 및 금형가공(ECR))
Publication Information
Journal of the Korean Society for Precision Engineering / v.21, no.11, 2004 , pp. 46-52 More about this Journal
Abstract
CMP (Chemical-Mechanical Polishing) is a process in which both chemical and mechanical mechanisms act simultaneously to produce the planarized wafer. CMP process is an extensive usage and continuing high growth rates in the semiconductor industry. The understanding of the process, however, is much slower. The nature of material removal from the wafer is still undefined and ambiguous. Material removal rate according to the slurry flow rate is also undefined and ambiguous. Thus, in this study, the basic mechanism of material removal rate as slurry flow rate is defined in terms of energy supply and energy loss.
Keywords
CMP; Slurry flow rate; Cooling effect; Chemical energy; Removal rate; Energy supply; Energy loss; Temperature; Heat generated;
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