• Transactions of Materials Processing
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• v.1 no.1
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• pp.66-74
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• 1992

According to the variation of hydrostatic pressure on the central axis of deformable material, the V-shaped central bursting defect may be created in extrusion or drawing processes. The process factors which affect the generation of defects are semi-angle of die, reduction ratio of cross-sectional area, friction factor, material properties and so on. The combination of these factors can determine the possibility of defect creation and the shape of various round holes which have been created inside already. By the rigid plastic finite element method, this paper describes the observations of change in shape of round holes with process conditions such as semi-angle of die, reduction ratio of cross-sectional area and friction factor at the non-steady state of axisymmetrical extrusion process when the round hole is already existed inside the original billet. Also, the effects of process factors are investigated to prevent the possible defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.645-649
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• 2007

Partial discharge(PD) test for simulated insulation defects of used hydro generator stator winding was conducted to analyze the PD Parameters. Simulated insulation defects are classified by 5 types corona, slot, internal, multi and aging defect. Phase resolved partial discharge, statistical parameter (skewness, kurtosis), PD magnitude as a function of the test voltage(Q-V curve) and PD magnitude change under test voltage for 2 minutes are used as PD parameters. The analysis of PD parameters by 4 types are proved to be useful methods. In particular, PD parameter characteristics of aging defect could help to assess the aging condition of stator winding because aging defect has more weak insulation strength than other insulation defects : PD distribution is wide and flat, PD rises rapidly near $0^{\circ}\;and\;180^{\circ}$ and Q-V curve rises sharply and then gently drops.

• Journal of the Korean Institute of Rural Architecture
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• v.15 no.1
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• pp.29-36
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• 2013

This study is to diagnose causes of damage and defects on external walls of brick structures, focused on "Naju Noahn" Catholic Church of Modern Architectural Properties. The causes of crack and deflection are overloading, shortage strength of arch. Among those, main cause is cauesd by shortage strength of arch because center of arch is dislocated and skew back of arch is small angle. The causes of damage and elimination are weathering, plants of friction, freezing and thawing, durability decrement of material and attach defection. This defects and damage is caused by high-moisture that occurs in soil. The causes of discoloration are change of soil moisture and flimsy brickwork. These defects and damage are mainly occurred in coping of cornice, weathering of window sill.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.299-303
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• 2001

Adherend-adhesive interface failure will occur on a macroscale when surface preparation or material quality are poor. It is well known that the stress singularity occurs at the edges of interface between the adhernds and the adhesive, and that crack will initiate from these positions. Also if bubbles are created and remained in the adhesive layer during the bonding process, the stress concentrates around these hole defects. In this paper, the effects of the hole defects on the SIF of interface crack were examined. From results, SIF increased with the hole defects near the interface crack and increased with an decreae in the upper adherend thickness, an increase in the center adhesive thickness.

• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.473-481
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• 2006

Predicting fatigue life by numerical methods was almost impossible in the field of rubber materials. One of the reasons is that there is not obvious fracture criteria caused by nonstandardization of material and excessively various way of mixing process. But, tearing energy as fracture factor can be applied to a rubber-like material regardless of different types of fillers, relative to other fracture factors and the crack growth process of rubber could be considered as the whole fatigue failure process by the existence of potential defects in industrial rubber components. This characteristic of fatigue failure could make it possible to predict the fatigue life of rubber components in theoretical way. FESEM photographs of the surface of industrial rubber components were analyzed for verifying the existence and distribution of potential defects. For the prediction of fatigue life, theoretical way of evaluating tearing energy for the general shape of test-piece was proposed. Also, algebraic expression for the prediction of fatigue life was derived from the rough cut growth rate equation and verified by comparing with experimental fatigue lives of dumbbell fatigue specimen in various loading condition.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.4
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• pp.9-15
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• 2017

In hot forming process, the dies in which excessive worn or crack occurs is reused after repair. Generally hot forming dies are recycled through a welding repair method. Welding repair methods are highly dependent on the skills of engineer. It causes process defects such as dimensional defects and structural defects. Recently, the metal 3D printing method has been applied to the repair of used dies. The aim of this study is to evaluate the wear characteristics of AISI H13 tool steel repaired by 3D printing method. Three kinds of wear specimens were fabricated by using 3D printing, welding, and initial material. A pin-on-disk wear test was carried out to evaluate the wear characteristics. From the result of wear test, the wear characteristics of 3D printing method was superior to that of the welded material, and was similar to that of the initial material.