• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.236-244
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• 2011

In this paper, we proposed flexible T-DMB dipole-shaped antenna that has strength of glass antenna and also has portability and ease of production. The input impedance of antenna according to vehicle body-effect was considered in order to install the antenna on the top of the front window. Installation position of on-glass antennas are changeable defends on driver, so we proposed Interdigital capacitor in feeding point to achieve matching characteristic with no position limit. The measurement result showed good return loss characteristic-below -6 dB in the T-DMB frequency band and maintained fixed resonant frequency.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.47-48
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• 2014

기본적으로 전력전송개념에서 최대의 전력이 전달하기 위해서는 전력전송단과 부하단사이의 임피던스를 맞추어 주어야 최대의 전력이 전달된다. 무선전력전송 역시 RF Source와 송수신 코일간의 임피던스를 맞추어야 최대의 전력전달과 효율을 기대할 수 있다. 따라서 송수신 코일과 부하간에 임피던스 매칭은 필수적으로 필요하다. 매칭이 원할하지 않을 경우 RF Source에 반사전력이 반사되어 심각한 손실을 발생할 수 있으며, 수신부의 부하단에 최대로 전력이 전달되지 않으며 전체 시스템 효율이 나빠지게 된다. 임피던스 매칭회로 타입에는 여러가지 타입이 사용되는데 대표적으로 L type, T Type, ${\pi}$ type이 일반적으로 사용된다. 본 연구에서는 L type, T type, ${\pi}$ type 방식을 이용하여 각 타입별 매칭범위와 매칭특성에 대한 기초실험을 수행하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.3
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• pp.36-44
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• 1980

A new coplanar Magic Tee has been formed, The H_arm Is made to have a parallel connection on the plane by using a microstrip and the I_arm is serially coupled by a cavity on the circuit mount and also by a gap formed on the microstrip ground plane. Open and shorted stubs are made to have maximum coupling at the gap of the I-arm, and 2 to 1 impedance matching trinsformers in the I and H-arms are designed to obtain 2nd order Chevyshev characteristics. The impedance matching characteristic on each arm is satisfactory : with VSWR less than 1.25, and the isolation between I and H arms less than -40 dB. These results are in good agreement with theoretical prediction.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.381-391
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• 2010

In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.587-593
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• 2006

The circuit of the EEFL system and the inverter has been analyzed into the resistance RL, the capacitance C of the EEFL-backlight system, and the inductance of transformer in the inverter. The lamp resistance and capacitance are deter-mined from the phase difference is between the lamp current and voltage and from the Q-V diagram, respectively. The single Lamp of EEFL for 32' LCD-BLU has the resistance of $66\;k\Omega$ and the capacitance of 21.61 pF. The resistance, which is connected by parallel in the 20-EEFLS BLU, is $3.3\;k\Omega$ and the capacitance is 402.1 pF. The matching frequency in the operation of lamp system is noted as $\omega_M=1/\sqrt{L_2C(1-k^2)}$, where $L_2$ is the inductance of secondary coil and k is the coupling coefficient between primary and secondary coil. The lamp current and voltage has maximum value at the matching frequency in the LCD BLU system. The results of analytic solutions are in good agreement with the experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.269-276
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• 2016

This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.620-626
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• 2015

In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

• Journal of the Korea Society of Computer and Information
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• v.11 no.2 s.40
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• pp.159-167
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• 2006

Lipreading has been suggested as one of the methods to improve the performance of speech recognition in noisy environment. However, existing methods are developed and implemented only in software. This paper suggests a hardware design for real-time lipreading. For real-time processing and feasible implementation, we decompose the lipreading system into three parts; image acquisition module, feature vector extraction module, and recognition module. Image acquisition module capture input image by using CMOS image sensor. The feature vector extraction module extracts feature vector from the input image by using parallel block matching algorithm. The parallel block matching algorithm is coded and simulated for FPGA circuit. Recognition module uses HMM based recognition algorithm. The recognition algorithm is coded and simulated by using DSP chip. The simulation results show that a real-time lipreading system can be implemented in hardware.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.