• 한국의류학회지
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• 제36권5호
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• pp.489-500
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• 2012

This work surveys the trend and dissolution characteristics in headdress that appear in Jean Paul Gaultier's collection. Along with a related literature review, a total of 903 headdress pieces shown in collections 40 times (excluding the common caps and hats) were analyzed, covering from 2001S/S to 2010 F/W of Jean Paul Gaultier's Haute Couture and Pret-a-Porter. The headdress trend indicated in his collections was divided into such subgroup forms of folklore, usage of natural things, usage of artificial things, religion, retro, scarf, variations in headgear, mask and veil, atypical type and abstract. Such an expression tendency was so unique and mixed characteristic that it was hard to define its form and structure thanks to enlargement and exaggeration, extremity in ornaments, and use of foreign materials, which led to creative dynamics. Gaultier's headdress also reflected the following characteristics: first, expression of difference indicative of time deconstruction; second, uncertainty of meanings via deconstruction; third, text interactivity via deconstruction of gender and material adopted; fourth, decentralization through dissolution of the Orient and the Occident.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.65-68
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• 2013

A novel bumping process using solder bump maker (SBM) is developed for fine-pitch flip chip bonding. It features maskless screen printing process. A selective solder bumping mechanism without the mask is based on the material design of SBM. Maskless screen printing process can implement easily a fine-pitch, low-cost, and lead-free solder-on-pad (SoP) technology. Its another advantage is ternary or quaternary lead-free SoP can be formed easily. The process includes two main steps: one is the thermally activated aggregation of solder powder on the metal pads on a substrate and the other is the reflow of the deposited powder on the pads. Only a small quantity of solder powder adjacent to the pads can join the first step, so a quite uniform SoP array on the substrate can be easily obtained regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 ${\mu}m$ is, successfully, formed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• 한국기계가공학회지
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• 제13권2호
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• pp.41-48
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• 2014

Direct writing(DW) is a method of patterning materials to a substrate directly, without a mask. It can use a variety of materials and be applied to various fields. Among DW systems, the flow-based type, using a syringe pump and nozzle, is simpler than other types. Furthermore, the range of materials is exceptionally wide. In additive processes, a three dimensional structure is made of stacking layer. Each layer is made of several lines. In this regard, good surface roughness of fabricated layers is essential to three dimensional fabrication. The surface roughness of any fabricated layer tends to change with the dispensing pattern. When multiple layers fabricated by a nozzle dispensing system are stacked, control of the nozzle position from the substrate is important in order to avoid interference between the nozzle and the fabricated layer. In this study, a fluid direct writing system for three dimensional structure fabrication was developed. Experimentsto control the position of the nozzle from substrate were conducted in order to examine the characteristics of the material used in this system.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.341.1-341.1
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• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.2-381.2
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• 2014

In this study the amorphous carbon films were deposited by PECVD at the substrate temperature range of 250 to $600^{\circ}C$, and the process conditions of higher and lower precursor flow rate, respectively. The temperature was a main parameter to control the density and mirco-structures of carbon films, and their's properties depended with the process temperatrue are changed by controlling precursor flow rate. The precursor feeding rate affect on the plasma ion density and a deposition reactivity. This change of film properties was obtained the instrinsic stress, FT-IR & Raman analysis, refractive index (RI) and ext. coef. (k) measured by ellipsometer. In the process conditions of lower and higher flow rate of precursor it had a different intrinsic stress as a function of the substrate temperature.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2013년도 춘계학술대회 논문집
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• pp.454-459
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• 2013

For the purpose of rapid development and superior design quality assurance, sophisticated finite element model for SOM(Spatial Optical Modulator) piezo actuator of MOEMS device has been developed and evaluated for the accuracy of dynamics and residual stress analysis. Parametric finite element model is constructed using ANSYS APDL language to increase the design and analysis performance. Geometric dimensions, mechanical material properties for each thin film layer are input parameters of FE model and residual stresses in all thin film layers are simulated by thermal expansion method with psedu process temperature. $6^{th}$ mask design samples are manufactured and $1^{st}$ natural frequency and 10V PZT driving displacement are measured with LDV. The results of experiment are compared with those of the simulation and validate the good agreement in $1^{st}$ natural frequency within 5% error. But large error over 30% occurred in 10V PZT driving displacement because of insufficient PZT constant $d_{31}$ measurement technology.