• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Journal of the Korean Magnetics Society
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• v.6 no.5
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• pp.323-328
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• 1996

NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers were formed on the $4^{\circ}$ tilt-cut Si(111) substrate by rf magnetron sputtering method. With a Cu($50\;{\AA}$) underlayer, NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers developed in-plane magnebc anisotropy and in-plane perpendicular alignment of easy axes in two magnetic components of NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers has been found. The easy axis of Co layer consisbng of NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers turned out to be along $4^{\circ}$ tilt Si <112> direcbon and that of NiFe layer along Si <110> direction. [NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$)]/Cu($50\;{\AA}$)/Si(111, $4^{\circ}$ tiIt-cut) trilayers showed about 2.2 % MR ratio at room temperature and large plateau in MR curves, which are more improved MR characteristics than those in [NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$)]/Cu($50\;{\AA}$)/glass trilayers with no appreciable magnetic anisotropy.

• Journal of the Korean Magnetics Society
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• v.24 no.4
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• pp.101-106
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• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• Corrosion Science and Technology
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• v.8 no.4
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• pp.162-169
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• 2009

Pure titanium and its alloys are drastically used in implant materials due to their excellent mechanical properties, high corrosion resistance and good biocompatibility. However, the widely used Ti-6Al-4V is found to release toxic ions (Al and V) into the body, leading to undesirable long-term effects. Ti-6Al-4V has much higher elastic modulus than cortical bone. Therefore, titanium alloys with low elastic modulus have been developed as biomaterials to minimize stress shielding. For this reason, Ti-30Ta-xZr alloy systems have been studied in this study. The Ti-30Ta containing Zr(5, 10 and 15 wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24 hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and Ti coating and then coated with TiN, respectively, by using DC magnetron sputtering method. The analyses of coated surface were carried out by field emission scanning electron microscope(FE-SEM). The electrochemical characteristics were examined using potentiodynamic (- 1500 mV~+ 2000 mV) and AC impedance spectroscopy(100 kHz~10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The equiaxed structure was changed to needle-like structure with increasing Zr content. The surface defects and structures were covered with TiN/Ti coated layer. From the polarization behavior in 0.9% NaCl solution, The corrosion current density of Ti-30Ta-xZr alloys decreased as Zr content increased, whereas, the corrosion potential of Ti-30Ta-xZr alloys increased as Zr content increased. The corrosion resistance of TiN/Ti-coated Ti-30Ta-xZr alloys were higher than that of the TiN-coated Ti-30Ta-xZr alloys. From the AC impedance in 0.9% NaCl solution, polarization resistance($R_p$) value of TiN/Ti coated Ti-30Ta-xZr alloys showed higher than that of TiN-coated Ti-30Ta-xZr alloys.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.