• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.42.1-42.1
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• 2008

• Tribology and Lubricants
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• v.30 no.4
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• pp.234-239
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• 2014

Magneto-rheological elastomer (MR elastomer) is a smart material, because it has mechanical properties that change under a magnetic field. An MR elastomer changes its stiffness characteristics when the inner particles (iron particles) align along the direction of a magnetic field. There has been much research to make use of this characteristic to control vibration issues in various mechanical systems, such as for mounting systems in the automotive field, home appliances, etc. Furthermore, the friction and wear properties of MR elastomer have been studied, as these relate to the durability of the material needed to meet engineering requirements. Rolling friction (or rolling resistance) is one of these friction properties, but has not yet been studied in the context of MR elastomers. In this study, an MR elastomer is fabricated in the shape of a hollow cylinder to evaluate the rolling friction characteristic under a magnetic field. The test apparatus is setup and a strain gauge is used to calculate the rolling resistance under test conditions. Permanent magnets are used to supply the magnetic field during tests. The load and rolling speed conditions are also considered for the tests. The test results show that rolling friction characteristic has a different trend under different magnetic field, load, and rolling speed conditions. It is assumed that the stiffness change of an MR elastomer under a magnetic field has an effect on the rolling friction characteristic of the MR elastomer. For the future work, the rolling friction characteristics of MR elastomers will be controlled by adjusting the strength of the magnetic field using electromagnets.

• Tribology and Lubricants
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• v.28 no.6
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• pp.333-339
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• 2012

Typical magneto-rheological (MR) elastomers consist of silicon-based material. A number of studies have been carried out to evaluate the vibration and tribological characteristics of silicon-based MR e-lastomers. However, these elastomers have quite low strength, so they have low wear resistance. In this study, polyurethane-based MR elastomers with performances better than those of MR elastomers. Experiments have been conducted on different MR elastomers (Pu MR elastomer, Pu-Si MR elastomer, and Pu-wrapped-Si MR elastomer) and different predefined magnetic directions (Non-Direction, Vertical Direction, and Horizontal Directionality) to evaluate the friction and wear performance under a magnetic field. The results show that Pu-wrapped-Si MR elastomer with a horizontal predefined magnetic field has the best performance in terms of wear.

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.815-818
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• 2003

New sensing and writing schemes for a magneto-resistive random access memory (MRAM) with a twin cell structure are proposed. In order to enhance the cell reliability, a scheme of the low voltage precharge is employed to keep the magneto resistance (MR) ratio constant. Moreover, a common gate amplifier is utilized to provide sufficient voltage signal to the bit line sense amplifiers under the small MR ratio structures. To enhance the writing reliability, a current mode technique with tri-state current drivers is adopted. During write operations, the bit and /bit lines are connected. And 'HIGH' or 'LOW' data is determined in terms of the current direction flowing through the MTJ cell. With the viewpoint of the improved reliability of the cell behavior and sensing margin, HSPICE simulations proved the validity of the proposed schemes.

• Journal of Magnetics
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• v.8 no.1
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• pp.50-59
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• 2003

Spatial light modulators (SLMs) are centrally important devices in volumetric recording, data Processing, Pattern recognition and other optical systems. Various types of reusable SLMs with two-dimensional pixel arrays have been intensively developed. Of these, magneto-optic spatial light modulators (MOSLMs) have advantages of high switching speed, robustness, nonvolatility, and radioactive resistance. In this article, we review recent development work on MOSLMs, mainly in relation to our own studies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.110-116
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• 2004

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.459-466
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• 1996

A great amount of effort has been devoted to the constant improvement of such basic performance as dirvability, safety and enviromental protection. As a result, the total combination of various technologies has made it possible to produce safer and more comfortable automobiles. Among these technologies, plasma and thin film techniques are mainly cocerned with sensors, optics, electronics and surface modification. This paper first describes a concept of thin film processing in materials synthesis for sensors based on particle-surface interaction during deposition to provide a long life sensor applicable to sutomobiles. Some examples of parctical application of thin films to sensors are then given. These include(1) a thin films strain gauge for gravity sensors, (2) a giant magneto resistance film for speen sensors, and (3) a Magneto-impedance sensors fordetection of low magnetic field. Further progress of sophisticated thin film technology must be considered in detail to explore advanced thin film materials science and to ensure the field reliability of future sensor devices for automobile.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.89-93
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• 2010

We study the giant magneto-resistance (GMR), coercivity and their dependence on the ferromagnetic layers adjacent to the nonmagnetic layer in a spin-valve structure, [Pd/ferromagnetic] multilayers with perpendicular anisotropy. We fabricated a basic spinvalve structure of $[Pd/Co]_2$/ferro-magnetic layer/nonmagnet/ferro-magnetic layer/$[Pd/Co]_2$/FeMn and investigated the dependence of its GMR and magnetic properties such ad coercivity on the ferromagnetic material to reduce the coercivity of the free layer. We try to reduce the freelayer coercivity by controlled the anisotropy, we insert the material NiFe, $Co_8Fe_2$, $Co_9Fe_1$ to ferromagnetic layers adjacent to the Cu layer. Then, we have been able to reduce the coercivity as low as 100 Oe, and also achieved 6.7% of magneto-resistance ratio when the ferromagnetic layer thickness was 0,7 nm.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory