• Analytical Science and Technology
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• v.11 no.3
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• pp.189-193
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• 1998

Binary alloys, $MoRu_3$ and $MoRh_3$, have been prepared using arc melting furnace. Mo and the noble metals Ru and Rh are the constituents of metallic insoluble residues, which were found in the early days of the post-irradiation studies on uranium oxide fuels. Detailed structural informations about these alloys have not been reported on JCPDS files of ICDD (International Centre for Diffraction Data). The results of X-ray diffraction study showed that the alloy was crystallized in hexagonal close-packing, well known as ${\varepsilon}$-phase. The X-ray diffraction patterns of these alloys matched well to that of $WRh_3$ with $P6_3/mmc$ of space group. The lattice parameters, a and c, were calculated using the least squares extrapolation. It was found from X-ray photoelectron spectroscopic measurements that Mo on the surface of the alloy was oxidized to Mo(6+), which could be removed by sputtering with Ar ions for approximately 15 minutes. The changes in binding energy of Mo, Ru, and Rh on the surface of the alloy were not observed. Magnetic susceptibility measurements resulted in the typical Pauli-paramagnetic behavior in the temperature range of 2 to 300 K.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.192-195
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• 2004

Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.157-162
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• 2006

In this study, a high sensitive giant magnetoresistance-spin valve (GMR-SV) bio-sensing device with high linearity and very low hysteresis was fabricated by photolithography and ion beam deposition sputtering system. Detection of the Fe-hemoglobin inside in a red blood and magnetic nanoparticles using the GMR-SV bio-sensing device was investigated. Here a human's red blood includes hemoglobin, and the nanoparticles are the Co-ferrite magnetic particles coated with a shell of amorphous silica which the average size of the water-soluble bare cobalt nanoparticles was about 9 nm with total size of about 50 nm. When 1 mA sensing current was applied to the current electrode in the patterned active GMR-SV devices with areas of $5x10{\mu}m^2 $ and $2x6{\mu}m^2 $, the output signals of the GMRSV sensor were about 100 mV and 14 mV, respectively. In addition, the maximum sensitivity of the fabricated GMR-SV sensor was about $0.1{\sim}0.8%/Oe$. The magnitude of output voltage signals was obtained from four-probe magnetoresistive measured system, and the picture of real-time motion images was monitored by an optical microscope. Even one drop of human blood and nanopartices in distilled water were found to be enough for detecting and analyzing their signals clearly.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.250-257
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• 1997

The microstructure and magnetic properties of Fe-Nb-B-N thin film alloys, which produced by rf magnetron sputtering method in $Ar+N_2$ mixed gas atmosphere, were investigated. The $Fe_{70}Nb_{14}B_{11}N_5$ films, annealed at 59$0^{\circ}C$, exhibit soft magnetic properties: $4{\pi}M_s=16.5kG$ , $H_c=0.13Oe$ and ${\mu}_{eff}$ (1~10 MHz)=5, 000. The frequency stability of the Fe-Nb-B-N films has also been found to be good up to 10 MHz. The Fe-Nb-B-N thin film alloys annealed at 59$0^{\circ}C$ consist of three phase; fine crystalline $\alpha$-Fe phase with grain size of about 5~10 nm, Nb-B rich amorphous phase and Nb-nitride precipitates with the size of less than 3 nm. Annealed Fe-Nb-B films have two phases; $\alpha$-Fe grains with the size of about 10 nm and Nb-B rich amorphous phase. The addition of N decreased $\alpha$-Fe grain size due to the precipitation of NbN. The good magnetic properties of the Fe-Nb-B-N film alloys are due to fine $\alpha$-Fe grains resulting from the precipitation of NbN.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.369-373
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• 2003

Magneto-optic Kerr Effect(MOKE), AFM and magnetoresistance measurements have been carried out on as-deposited and annealed Magnetic Tunnel Junctions(MTJs) with junction sizes 180, 250, 320 and 380 $\mu\textrm{m}$ in order to investigate the correlation among interlayer exchange coupling, surface roughness and junction size. Relatively irregular variations of coercivity $H_{c}$ (∼17.5 Oe) and interlayer exchange coupling $H_{E}$ (∼17.5 Oe) are observed over the junction in as-deposited sample prepared by DC magnetron sputtering. After annealing at $200^{\circ}C$, $H_{c}$ decreases to 15 Oe, while $H_{ E}$ increases to 20 Oe with smooth local variation. $H_{E}$ shows very good correlation with surface roughness across the junction in agreement with Neel's orange peel coupling. The increasing slope per $\mu\textrm{m}$ of normalized $H_{c}$ and $H_{E}$ are same near junction edge along free-layer direction irrespective of junction size, giving relatively uniform $H_{c}$ and $H_{ E}$ for wider junction size. Thickness profiles of the junctions measured with $\alpha$-step show increasingly flat top surface for larger junctions, indicating better uniformity for large. junctions in agreement with the normalized$ H_{c}$ and H$/_{E}$ curves. TMR ratios also increase with increasing junction size, indicating improvement for larger uniform junctions.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.171-174
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• 2000

In this study, the laser patterning of sputter-deposited amorphous CoNbZr films has been tried usig Nd: YAG laser. However, the metal film was not removed because of its high reflectance of the alser on the metal surface. To solve this problem, authors tried to screen-print a block polymer on the metal film and then irradiate the laser on the polymer. This is a new method which was suggested by this study. Using this new method, the metal films were effectively removed with the laser power of 114W even though the metal films was not removed with the laser power of 332W using the conventional method. This result leads to the conclusion that the block polymer acts as a laser energy absorbing and transferring layer.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.293-297
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• 1993

Exchange coupled $NiFe/TbCo/Sio_{2}$ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured. TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a Theo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.