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http://dx.doi.org/10.4283/JKMS.2004.14.5.192

Exchange Bias Perpendicular Magnetic Anisotropy by Buffer Layer and Inserted Layer in [Pd/Co]5/FeMn Multilayer  

Joo, Ho-Wan (물리학과, 단국대학교)
An, Jin-Hee (물리학과, 단국대학교)
Lee, Mi-Sun (물리학과, 단국대학교)
Kim, Bo-Keun (물리학과, 단국대학교)
Choi, Sang-Dea (물리학과, 단국대학교)
Lee, Kee-Am (물리학과, 단국대학교)
Abstract
Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.
Keywords
Perpendicular magnetic anisotropy; Exchange bias; Buffer layer; Insert layer; Annealing effect;
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