• Progress in Superconductivity
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• 제11권1호
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• pp.36-41
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• 2009

Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.897-899
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• 1992

This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.

• 한국자기학회지
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• 제3권3호
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• pp.221-228
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• 1993

고밀도기록용 박막재료로서의 충족조건은 높은 보자력, 높은 포화자화, 생산성, 그리고 화학적 안정성으로써 수직자기기록매체 CoCrMo 자성박막을 RF 스퍼터링 방법으로 제조한 후, 부식 특성을 전기화학적 측정, acceleration corrosion test 및 부식후 박막의 표면분석을 통하여 조사 하였다. CoCrMo 박막의 부식특성은 스퍼터링 조건에 따라서 다르게 나타났으며, Mo의 함량이 증가 할수록 내식성은 향상되었다. 전기화학부식실험 결과 박막의 Mo 함량이 증가할수록 뚜렷한 활성- 불활성 전이를 나타내었으며 부동태전류밀도의 감소를 나타내었다. Accelerated corrosion test에 서 CoCrMo 박막의 부식은 전기화학반응에 의하여 일어났으며 Mo첨가에 따라 부식이 일어난 곳의 수는 감소하였다. AES분석결과 부식 장소에는 많은 양의 $Cl_{-}$ 이온이 존재하였고, Cr의 고갈이 부식의 원인이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• Journal of Magnetics
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• 제12권4호
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• pp.149-151
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• 2007

The AlCrN films were grown by RF reactive sputtering method under the selected conditions. The Cr concentration was varied by the number of Cr pieces placed on the Al target. The sample quality has been studied by XRD, Auger spectroscopy, optical absorption and electrical resistant measurements. The XRD and Auger results show that the samples consist of a major phase with the $Al_{1-x}Cr_xN$ formula, which has a hexagonal structure, and a few percents at. of oxygen, which may form $Al_2O_3$. There exist the Cr clusters in the samples with high concentration of Cr. The optical absorption measurement provides the information about the band gap that relates strongly to the quality of samples. The quality of samples is also clearly reflected in electrical measurement, i.e., the temperature dependence of resistance exhibits a semiconductor characteristic only for the samples that have no Cr cluster. In these cases, the values of ionization energies $E_a$ can be derived from R(T) plots by using the function R(T) = Ro exp $(E_a/k_BT)$.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.1-6
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• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.

• 한국자기학회지
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• 제5권5호
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• pp.641-644
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• 1995

We have studied the effect of the nitrogen on the microstructure, thermomagnetic properties and corrosion resistance of Fe-Hf-C-N nanocrystalline thin films with high permeability and high saturation magnetization. These films were fabricated by reactive sputtering in $Ar+N_{2}$ plasma using an rf magnetron sputtering apparatus. As $P_{N2}$ increases, the microstructure changes from amorphous to crystalline $\alpha$-Fe phase and again returns to amorphous one. Spin wave stiffness constant increases with $P_{N2}$ until 5% $P_{N2}$, and then decreases with the further increase. This trend corresponds well with that of the microstructure with increasing $P_{N2}$. The Fe-Hf-C-N films with over 3% $P_{N2}$ show higher corrosion resistance than the N-free Fe-Hf-C films. The Fe-Hf-C-N films are considered to have high potentials for the head core materials suitable for high density recording systems, owing to their excellent soft magnetic properties and corrosion resistance.

• 한국자기학회지
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• 제25권2호
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• pp.43-46
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• 2015

$SiO_2$ 산화막이 제거되지 않은 Si(100) 기판 위에 실온에서 5 nm Ta과 5 nm MgO 기저층을 증착하고, 그 위에 RF 스퍼터링 기법으로 실온에서 약 35 nm 두께의 $Fe_3O_4$ 박막을 적층하였다. 진공 후열처리에 따라 향상된 $Fe_3O_4$ 박막의 결정성과 그에 따른 자기적 특성의 변화 양상을 관찰하였다. $500^{\circ}C$에서 1시간 동안 후열처리한 시료에 대해, 실온에서 강자성 특성을 보았을 뿐만 아니라, $Fe_3O_4$ 박막의 고유한 특성으로 알려진 Verwey 상전이 현상 또한 관찰되었다. 후열처리에 의해 MgO 박막 위에 적층된 $Fe_3O_4$에 미치는 Ta 기저층의 영향에 대해 Ta이 삽입되지 않은 경우와 비교하여 논의 할 것이다.

• 한국세라믹학회지
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• 제39권10호
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• pp.928-934
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• 2002

Ga을 치환 고용시킨 ZnO(GZO) 박막을 GZO 세라믹 타켓을 사용하여 직류 마그네트론 스퍼터법에 의해 기판온도(RT, 400${\circ}C$), 잔류 $H_2O$ 분압(PH2O; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), $H_2$ 가스 첨가(8.5%), 캐소드의 자장강도(250, 1000G)등의 다양한 조건하에서 제작했다. 기판 가열 없이 100% Ar를 사용한 경우, $P_{H_2O}$가 1.61${\times}10^{-4}$ Pa에서 2.2${\times}10^{-3}$ Pa로 증가 했을 때, 박막의 결정립 크기는 24 nm에서 3 nm로 감소했으며, 비저항은 3.0${\times}10^{-3}$에서 3.1${\times}10^{-2}{\Omega}㎝$ 로 크게 증가함을 보였다. 그러나, 8.5% $H_2$를 Ar 가스에 혼합하여 제막한 결과, GZO 박막의 전기적 특성은 $P_{H_2O}$의 증가에도 불구하고 변화 없이 나타났다. 또한 캐소드의 자장강도를 250G에서 1000G로 증가시킨 경우, GZO 박막의 결정성 및 전기적 특성은 $P_{H_2O}$와 상관없이 크게 향상되었으며, 이것은 플라즈마 임피던스의 감소에 따른 박막 손상의 감소에 기인한다고 생각된다.