• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1150-1151
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10 wt.% Ti showed the minimum resistivity of ${\rho}=5.5{\times}10^{-3}{\Omega}cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8 % at light intensity of 100 $mW/cm^2$.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.39-43
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• 2001

Nanocrystalline Fe-Sm-O thin films were prepared by RF magnetron reactive sputtering method in $Ar+O_2$mixed atmosphere with the $O_2$content of 5%. The compositions of the thin films were changed by changing the number of $Sm_2O_3$ chips. The best soft magnetic properties of the thin film with the composition of $Fe_{83.4}Sm_{3.4}O_{13.2}$ were saturation flux density of 18 kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100 MHz, respectively. The electrical resistivity of Fe-Sm-O thin films was increased with increasing the amount of Sm and O elements which combined each other, the electrical resistivity of$Fe_{83.4}Sm_{3.4}O_{13.2}$ thin film was $130{\mu}{\Omega}cm$. In case of the small amount of Sm and O elements, the microstructures of Fe-Sm-O thin films showed a precipitated phase of $Sm_2O_3$ on the ${\alpha}-Fe$ phase. With the increase of the amount of Sm and O elements, the microstructures of the Fe- Sm-O thin films were changed into a mixed structure of ${\alpha}-Fe$ crystal-phase and Sm-oxide amorphous phase. The Fe-Sm-O thin films with Fe content in the range of 72~94 at% exhibited the quality factor (Q = $\mu$′/$\mu$") of 7~75 up to 50 MHz.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.100-103
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• 2003

The magnetoresistance (MR) of $La_{1-\chi}S_{\chi}CoO_{3-\delta}$ films prepared by pulsed-laser deposition were investigated in order to clarify the magnetotransport properties around the metal-insulator transition. For the films in the metallic state ($\chi$ > 0.25), the MR(T) manifests a small peak at the Curie temperature due to the spin-disorder scattering. The transition of the film into the insulating state ($\chi\;\leq$ 0.25) is accompanied by an essential growth of the MR and results in a significant increase in the MR(T) with decreasing temperature, due to a phase separation into the ferromagnetic-metal clusters and the insulating matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.155-159
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• 2003

We report on the annealing effect and ferromagnetic characteristics of Zn$_{0.7}$Mn$_{0.3}$O film prepared by sol-gel method on the silicon (100) substrate using field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry. Magnetic measurements show thatZn$_{0.7}$Mn$_{0.3}$O films exhibit ferromagnetism at 5 K revealing the coercive field of ∼110 Oe for as grown sample and 360, 1035 Oe for samples annealed at 700, 800 $^{\circ}C$, respectively. Our experimental evidence suggests that ferromagnetic precipitates of a manganese oxide may be responsible for the observed ferromagnetic behaviors of the film.he film.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.152-152
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• 2016

Anodizing is a technology to generate thicker and high-quality films than natural oxide films by treating metals via electrochemical methods. It is a technique to develop metals for various uses, and extensive research on the commercial use has been performed for a long time. Aluminum anodic oxide (AAO) is generate oxide films, whose sizes and characteristics depending on the types of electrolytes, voltages, temperatures and time. Electrochemical manufacturing method of nano structure is an efficient technology in terms of cost reduction, high productivity and complicated shapes, which receives the spotlight in diverse areas. The sulfuric acid was used as an anodizing electrolyte, controlling its temperature to $10^{\circ}C$. The anode was 5083 Al alloy with dimension of $5(t){\times}20{\times}20mm$ while the cathode was the platinum. The distance between the anode and the cathode was maintained at 3 cm. Agitation was introduced by magnetic stirrer at 300 rpm to prevent localized temperature rise that hinders stable growth of oxide layer. In order to observe surface characteristics with applied current density, the electrolyte temperature, concentration was maintained at constant condition for $10^{\circ}C$, 10 vol.%, respectively. To prevent hindrance of stable growth of oxide layer due to local temperature increase during the experiment, stirring was maintained at constant rate. In addition, using galvanostatic method, it was maintained at current density of $10{\sim}30mA/cm^2$ for 40 minutes. The cavitation experiment was carried out with an ultrasonic vibratory apparatus using piezo-electric effect with modified ASTM-G32. The peak-to-peak amplitude was $30{\mu}m$ and the distance between the horn tip and specimen was 1 mm. The specimen after the experiment was cleaned in an ultrasonic, dried in a vacuum oven for more than 24 hours, and weighed with an electric balance. The surface damage morphology was observed with 3D analysis microscope. As a result of the investigation, differences were observed surface hardness and anti-cavitation characteristics depending on the development of oxide film with applied current density.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.366-366
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• 2012

현재 사용되고 있는 투명전극재료 중에 ITO(Indium Tin Oxide)가 가장 투명하면서 전기도 잘 통하고 생산성도 좋다. 투명전극은 비저항이 $1{\times}10^{-3}{\Omega}/cm$이하, 면 저항이 $10^3{\Omega}/sq$이하로 전기전도성이 우수하고 380에서 780 nm의 가시광선 영역에서의 투과율이 80%이상이라는 두 가지 성질을 만족시키는 박막이다. 본 연구에서 X-ray Film을 제작하기 위하여 상용화된 ITO Glass 전극 기판에 X-ray가 조사되면 직접 전자 전공 쌍(electron-hole pair)을 발생시켜 전기적 신호를 발생하는 광도전체 물질(Photoconductor)인 PbO, $PbI_2$, $HgI_2$를 스크린 프린팅(Screen Printing)법을 이용하여 각각 제작하였다. 상부 전극으로 마그네틱 스퍼터링(Magnetic Sputtering) 진공 증착 장치를 사용하여 전류, 전압, 아르곤 및 산소 유입량등을 조절하면서 상부 전극을 증착하였다. 이때 타켓으로 $In_2O_3;SnO_2$ (조성비:90:10wt%)를 사용 하였고, base pressure는 $9{\times}10^{-7}torr$, deposition pressure는 $3{\times}10^5torr$를 고정하였다. 또한 전류와 전압은 각각 0.4A, 800V로 유지하고, $O_2$:0.3 ppm, Ar의 경우 4.9 ppm에서 70 ppm까지 올려 플라즈마를 활성화 시킨 후 90초 동안 ITO를 증착하였다. 본 실험에 제작된 박막으로 X-ray을 조사하여 검출기로써 특성 평가를 실시하였으며, 실험결과 X-선 투과와 전도성 등 두가지 특성이 동시에 만족 될 만한 성능을 가질 수 있음을 확인 할 수 있었다.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.897-899
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• 1992

This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.