• Journal of the Korean Magnetics Society
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• v.24 no.4
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• pp.101-106
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• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.109-109
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• 2003

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.308-316
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• 2008

For the measurement of liquid level in ship's cargo tank, ballast tank, fuel oil tank and fresh water tank, several types of gauge meter are used such as tubular type, magnetic float type, reflex type transparent type and welding pad type. Among them, magnetic float type gauge meter is environmental friendly device because it is free of power source and maintenance. The main obstacle of the device is relatively large error bound. In this paper, finite element method is used to design and analysis of the magnetic float type gauge meter. The operation of reed switch according to the magnetic field has been successfully described and agreed well with experimental measurement. The optimum geometry with combination of permanent magnet and reed switches are designed to achieve 98 % accuracy of fluid level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.379-382
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• 2004

In this paper, it is investigated in advance about the PZT-based composition for piezoelectric vibration device. The specimens of piezoelectric ceramics are made of Columbite method. The piezoelectric vibration device by this composition is designed by ATILA(Magsoft) program used FEM(Finite Element Method). The vibration device used for mobile phone must be driven in the frequency of $130{\sim}200Hz$, so the resonant frequency of piezoelectricity must adjust driven frequency bandwidth. The result of analysis by ATILA is appeared dependant property of length, width, thickness and dummy weight about resonant frequency of the piezoelectric vibration device. The size of manufactured actuator is $28{\times}12{\times}0.3mm^3(length {\times}width{\times}thickness)$ and this is bimorph type. The test of manufactured piezoelectric vibration device measure displacement, acceleration and power dissipation. The piezoelectric vibration device has the advantage more than electro-magnetic motor, however the size of manufactured device is larger than electro-magnetic motor.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.579-584
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• 2003

Solenoid type magnetic actuator is the device, which could translate the electromagnetic energy to mechanical force. The force generated by magnetic flux, could be calculated by Maxwell stress tensor method. Maxwell stress tensor method is influenced by the magnetic flux path. Thus, magnetic force could be improved by modification of the iron case, which is the route of the magnetic flux. Modified design is obtained by parameter optimization using by Response surface methodology.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.91-91
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• 2003

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.322-325
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• 2002

In this paper, the power-linking device connecting the high-Tc super-conducting(HTS) coil to the power system in the DC reactor type three-phase high-Tc superconducting fault current limiter (SFCL) has been designed. This design was triggered from the concept that the magnetic energy could be exchanged into the electrical energy each other. Ferromagnetic material is used as the path of magnetic flux. The device mentioned above was named Magnetic Core Reactor(MCR). MCR was designed to minimize the voltage drop caused by copper loss. The current density of the conductor was 1.3 A/mm$^2$ and % voltage drop was 2%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Proceedings of the KSR Conference
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• 2009.05a
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• pp.452-456
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• 2009

This paper presents a method for precisely localizing and parking of bimodal trams. In order to gam an automatically driving system for bimodal trams, precise up-to-date localization, velocity recognition, distance to next station and precise parking location estimation functions are required. This paper proposes a system consisting of control device, steering device, sensor input equipment, driving system, tachometer, vehicle-side sensors, magnetic markers and magnetic sensors. The tram recognizes the precise location via magnetic markers containing information. Parking position and precise distance calculation is embodied by a tachometer. The vehicle-side sensors are used to assure safe station approaching and parking magnetic markers provide improvement of precision while tram parking. This paper provides a system realizing localization and precise parking and afterwards the automatic drive test results are reported and analyzed.