• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.339-339
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• 2002

In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.123-128
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• 2017

The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field ($H_{ex}$), coercivity ($H_c$), and MR ratio of Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/Ta(4 nm) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/Ta(4 nm) SV multilayer film showed $H_{ex}=2Oe$, $H_c=316Oe$, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/CoFe(3 nm)/Cu(2.5 nm)/CoFe(6 nm)/Ta(4 nm) SV multilayer film showed $H_c=37.5Oe$ and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of $H_{ex}$ and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.

• Resources Recycling
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• v.16 no.3 s.77
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• pp.19-26
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• 2007

The bottom ash of municipal solid waste incineration generated during incineration of municipal solid waste in metropolitan area consists of ceramics, glasses, ferrous materials, combustible materials and food waste and so on. Although the ferrous material was separated by the magnetic separation before the incineration process, of which content accounts for about $3{\sim}11%$ in bottom ash. The formation of a $Fe_3O_4-Fe_2O_3$ double layer(similar to pure Fe) on the iron surface was found during air-annealing in the incinerator at $1000^{\circ}C$. A strong thermal shock, such as that takes place during water-cooling of bottom ash, leads to the breakdown of this oxidation layer, facilitating the degradation of ferrous metals and the formation of corrosion products and it existed as $Fe_2O_3,\;Fe_3O_4\;and\;FeS_2$. So, many problems could occur in the use of bottom ash as an aggregate substitutes in construction field. Therefore, in this study, the separation of ferrous materials from municipal solid waste incineration bottom ash was investigated. In the result, the ferrous product(such as $Fe_2O_3,\;Fe_3O_4,\;FeS_2$ and iron) by magnetic separator at 3800 gauss per total bottom ash(w/w.%) accounted for about 18.7%, and 87.7% of the ferrous product was in the size over 1.18 mm. Also the iron per total bottom ash accounted for about 3.8% and the majority of it was in the size over 1.18 mm.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.67-70
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• 2008

$Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) fabricated by sol-gel and vacuum sealed annealing process. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) have been studied by x-ray diffraction(XRD), vibrating sample magnetometer, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The determined lattice constants $a_0$ of x = 0, and 1 are $12.497\AA$, and $12.465\AA$, respectively. The distribution of gallium and iron in $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ is studied by Rietveld refinement. Based on Rietveld refinement results, the terbium and bismuth ions occupy the 24c site, iron ions occupy the 24d, l6a site, and nonmagmetic gallium ions occupy the 16a site. In order to verify the magnetic site occupancy of iron and gallium, we have taken $M\ddot{o}ssbauer$ spectra for $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) at room temperature. From the results of $M\ddot{o}ssbauer$ spectra analysis, the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 60.8 % and 39.2 %, respectively, and the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 74.7 % and 25.3 %, respectively. It is noticeable that all of the nonmagnetic Ga atoms occupy the 16a site by vacuum annealing process.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.7-13
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• 2011

[ $L1_0$ ]phase FePd nano-dot structures were successfully fabricated on self-organized Fe/Au bilayers. With atomic force microscopy, it is determined that surface morphologies of initially flat Fe/Au bilayer films were agglomerated and transformed their shape into nano-dots structures with increasing annealing temperature. With this bilayer as a template, FePd multilayers were deposited at various temperatures, i.e. $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$, and $450^{\circ}C$. Surface morphologies of FePd superlattice had a near resemblance to self-organized bilayer. According to X-ray diffraction results, it is confirmed that $L1_0$ superlattice structures of FePd were obtained from samples which were annealed above $350^{\circ}C$. Results of X-ray photoelectron spectroscopy depth-profile analysis showed that chemical composition is identical to deposition sequence. As a result, without additional etching processes, fabrication of chemically ordered FePd superlattice nano-dots was achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.34-39
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• 2006

Pure and Fe-doped CuO thin-film and powder samples were prepared using a sol-gel method. Undoped CuO films exhibited monoclinic structure and p-type electrical conductivity $(\~10^{-2}\;{\Omega^{-1}\;cm^{-1}$ due to copper deficiency. On the other hand, CuO: Fe films were found to be insulating and Li doping on the films led to a restoration of p-type conductivity and a ferromagnetic hysteresis behaviour at room temperature. The observed properties far the CuO : Fe, Li films can be explained in terms of hole creation by substitution of $Li^+$ for $Cu^{2+}$ sites and mediation of long-range interactions between $Fe^{3+}$ ions by the $Li^+$-induced defect states. CuO: Fe powders exhibited a ferromagnetism at room temperature with its strength being dependent on post-annealing temperature. Mossbauer measurements on the CuO: Fe films and powders revealed that the octahedral $Cu^{2+}$ sites are mostly substituted by $Fe^{3+}$ ions.