• 제목/요약/키워드: MTTF

검색결과 82건 처리시간 0.027초

AVTMR 시스템의 설계 및 RAM 평가 (Design of AVTMR system and Evaluation of RAM (Reliability, Availability, Maintainability))

  • 김현기;이기서
    • 한국통신학회논문지
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    • 제25권12B호
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    • pp.2016-2024
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    • 2000
  • 본 논문에서는 결함의 영향을 받지 않고 동작할 수 있는 AVTMR(All Voting Triple Modular Redundancy) 시스템을 개발하였으며, MILSPEC-217F에 기반을 둔 고장율을 계산하여 AVTMR과 SS(Single System) 시스템을 비교 및 평가하였다. 설계된 시스템은 MC68000을 기반으로 한 3중화된 다수결 보터(Triplicated Majority Voter)를 이용하여 시스템을 개발하였다. 본 논문에서는 시스템의 신뢰도(Reliability), 가용도(Avaliability), 유지보수도(Maintainability)를 마코브 모델(Markov model)로 평가하였으며, 또한 시스템의 MTTF(Mean Time to Failure)를 계산하여 시스템의 수명을 구하였고, 설계된 AVTMR 시스템이 SS(Single System)보다 전체 시스템 평가에서 우수한 특성을 가진다는 것을 시뮬레이션을 통해 알 수 있었다. 또한, AVTMR 시스템은 결함을 허용(Fault tolerant)하는 시스템 특성을 가지기 때문에, 인간의 생명과 관련된 철도 시스템, 선박 시스템이나 항공기 시스템에 적용될 수 있다.

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Impact of Passivation and Reliability for Base-exposed InGaP/GaAs HBTs

  • Park, Jae-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.115-120
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    • 2007
  • Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

AlGaAs/GaAs HBT의 열화분석과 InGaP ledge 에미터에 의한 신뢰도 개선 (Degradation analysis of AlGaAs/GaAs HBTs and improvement of reliability by using InGaP ledge emitter)

  • 최번재;김득영;송정근
    • 전자공학회논문지D
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    • 제35D권7호
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    • pp.88-93
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    • 1998
  • For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

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결함 허용 Mini-MAP 시스템의 구현 및 성능해석 (Implementation and Performance Analysis of a Fault-tolerant Mini-MAP System)

  • 문홍주;박홍성;권욱현
    • 전자공학회논문지B
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    • 제32B권3호
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    • pp.1-10
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    • 1995
  • In this paper, a fault-tolerant Mini-MAP system with high reliability is proposed. For fault-tolerance, the LLC sublayer, MAC sublayer, and physical layer of the Mini-MAP system are dualized. The detection of faults, the replacement of the failed network, and the management of the network are three major functions required for the dualization, and they are performed by ESM(Error Supervisory Machine), EMM(Error Management Machine), and NMM(Network Management Machine) of the proposed fault-tolerant Mini-MAP system, respectively. The ring maintenance function of the MAC sublayer is used for the detection of the faults. In the proposed fault-tolerant Mini-MAP system, the data are received from both of the dualized networks and transmitted to the selected one of the two. We analyze the reliability and the MTTF(Mean Time To Failure) of the proposed fault-tolerant Mini-MAP system and show that it has better performance compared to a general Mini-MAP system.

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굴삭기 Alternator 고장분석 (Failure Analysis of Alternator for Excavator)

  • 이상규;정해천;김범철
    • 한국신뢰성학회:학술대회논문집
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    • 한국신뢰성학회 2002년도 정기학술대회
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    • pp.113-113
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    • 2002
  • 차량용 Alternator는 기계적인 에너지인 엔진의 회전력을 이용하여 발전을 하여 차량의 전기장치를 작동시키는 데 필요한 전원을 공급하며, Battery에 전원을 충전하는 장치이다. 따라서 Alternator의 고장이 발생하면 초기에는 Battery 전원에 의해서 차량의 제어 및 동작이 가능하나 Battery가 방전되면 차량의 제어는 물론 장비의 작동 자체가 불가능해진다. 차량용 Alternator는 농기계 및 승용차용으로 사용하는 12V Alternator와 상용차 및 특수차량용으로 사용하는 24V Alternator로 나누어진다. 특히 굴삭기는 험지에서의 굴착작업, Breaker 작업 등 진동, 내열, 먼지 등 환경조건이 기존의 차량과는 대조가 되지 않을 정도로 열악하여 일반차량용에서 보다 부품수명도 짧고, 고장발생 모드도 다양하다. 본 장에서는 굴삭기에 사용되는 24V Alternator의 고장모드를 분석하고 Field에서 발생하는 고장을 개선함으로써 MTTF를 향상시키는 방법에 대하여 고찰하고자 한다.

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Accelerated Test Design for Crankshaft Reliability Estimation

  • Jung, D.H.;Pyun, Y.S.;Gafurov, A.;Chung, W.S.
    • International Journal of Reliability and Applications
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    • 제10권2호
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    • pp.109-118
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    • 2009
  • Crankshaft, the core element of the engine of a vehicle, transforms the translational motion generated by combustion to rotational motion. Its failure will cause serious damage to the engine so its reliability verification must be performed. In this study, the S-N data of the bending and torsion fatigue limits of a crankshaft are derived. To evaluate the reliability of the crankshaft, reliability verification and analysis are performed. For the purpose of further evaluation, the bending and torsion tests of the original crankshaft are carried out, and failure mode analysis is made. The appropriate number of samples, the applied load, and the test time are computed. On the basis of the test results, Weibull analysis for the shape and scale parameters of the crankshaft is estimated. Likewise, the $B_{10}$ life under 50% of the confidence level and the MTTF are exactly calculated, and the groundwork for improving the reliability of the crankshaft is laid.

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RFID 태그 패키지의 신뢰성 향상을 위한 연구 (Investigation of Improve to RFID Tag Packaging Reliability)

  • 반창우;장동영
    • 한국생산제조학회지
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    • 제21권3호
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    • pp.507-515
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    • 2012
  • Recently RFID(Radio Frequency Identification) technology advances in wireless communication technologies are bringing new challenges. But RFID tag packaging technology has been lagging compared to the demand, so this technology is being required to improve productivity and reliability. This study is performed on FMEA, reliability at development level and analysis failure mode through environment and mechanical test. Robust design is applied to search the optimized condition of factor and RFID tag packaging should be satisfied with high MTTF.

Analysis the Reliability of Multilayer Ceramic Capacitor with inner Ni Electrode under highly Accelerated Life Test Conditions

  • Yoon, Jung-Rag;Lee, Kyung-Min;Lee, Serk-Won
    • Transactions on Electrical and Electronic Materials
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    • 제10권1호
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    • pp.5-8
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    • 2009
  • The reliability of multilayer ceramic capacitor with active thin dielectric layer was investigated by highly accelerated life test at various stress condition. The distribution of multilayer ceramic capacitor failure times is plotted as a function of time from Weibull distribution function. According to the test result, voltage acceleration factor is obtained from 2.24 to 2.96. The acceleration by temperature is much higher than other values of active thick dielectric layer. It is clear that median time to failure is affected by the stress voltage for high volumetric efficiency ceramic capacitors with active thin dielectric layer. The degradation under stress of voltage involves electromigration and accumulation of oxygen vacancy at Ni electrode interface of cathode.

레귤레이터 IC의 부하경감 설계 (Derating Design Approach for a Regulator IC)

  • 김재중;장석원
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제7권1호
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    • pp.1-11
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    • 2007
  • This paper presents a derating design approach for reliability improvement of a regulator IC. The IC is usually used in SMPS. The main failure mechanism of interest is voltage drop due to the package delamination mainly caused by two stresses, i.e. temperature and current. The lifetime under stresses is modeled as a function of stresses and time using accelerating life testings. Quantitative and qualitative variation in lifetime according to stress variations are investigated using the modeled lifetime. Stress levels would be determined to achieve required reliability levels in the aspect of derating design for reliability.

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외부 베이스표면을 에미터 ledge로 포장한 InGaP/GaAs HBT의 신뢰도 향상 (High Reliable GaAs HBT with InGaP Ledge Emitter Structure)

  • 박재홍;박재운
    • 한국컴퓨터정보학회논문지
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    • 제5권4호
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    • pp.102-105
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    • 2000
  • 외부 베이스 표면에 형성되는 표면 재결합 상태의 불안정성을 개선하기 위해 에미터 ledge 구조로 제작된 InGaP/GaAs HBT의 신뢰도 측정을 위해 고온에서 오랜 시간동안 정전류 스트레스를 인가하였다. 553K, 533K, 513K에서 콜렉터 전류 24㎃로 스트레스를 인가해 전류이득의 열화를 관찰하였다. 그 결과 EA=1.97eV, WTTF=4.8$\times$108시간(14$0^{\circ}C$)을 구하였다. InGaP/GaAs HBT의 열화 원인은 베이스 도펀트인 C의 확산으로 추정된다.

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