• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권2호
• /
• pp.153-162
• /
• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• 전자공학회논문지
• /
• 제51권7호
• /
• pp.89-95
• /
• 2014

주위 밝기 및 환경에 따라서 LED 조명등의 밝기를 조절하기 위한 장치를 PWM 기술과 전력 소자를 이용하여 구현하였다. 주위의 광량 측정을 위하여 CdS 센서를 사용하였으며, PWM 신호 생성을 위하여 MCU를 사용하여 제어 보드를 설계한 다음 광량에 따라 듀티비를 조절하였다. 고전압, 대전류를 필요로 하는 LED 조명등을 디밍하기 위하여 전력 소자를 사용하여 DC 전원장치의 출력을 스위칭하였으며, PowerMOSFET, IGBT, PowerBJT를 각각 사용하여 특성을 서로 비교하였다. 실험결과 선형성 면에서는 IGBT가 양호하였으나, 효율 및 가격 면까지 고려하면 PowerBJT도 우수한 특성을 보였다.

• Transactions on Electrical and Electronic Materials
• /
• 제11권1호
• /
• pp.24-28
• /
• 2010

A simulation study of a current-mode direct current (DC)-DC buck converter is presented in this paper. The converter, with a fully integrated power module, is implemented by using sense method metal-oxide-semiconductor field-effect transistor (MOSFET) and bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. When the MOSFET is used in a current sensor, the sensed inductor current with an internal ramp signal can be used for feedback control. In addition, the BiCMOS technology is applied in the converter for an accurate current sensing and a low power consumption. The DC-DC converter is designed using the standard $0.35\;{\mu}m$ CMOS process. An off-chip LC filter is designed with an inductance of 1 mH and a capacitance of 12.5 nF. The simulation results show that the error between the sensing signal and the inductor current can be controlled to be within 3%. The characteristics of the error amplification and output ripple are much improved, as compared to converters using conventional CMOS circuits.

• 센서학회지
• /
• 제9권2호
• /
• pp.113-119
• /
• 2000

정류수 내 수소 가스를 감지할 수 있는 Pd 박막을 가진 Pd/Pt 게이트 MISFET 수소센서를 제조하였다. 감지게이트 MISFET와 기준 게이트 MISFET의 차동형 센서로 제작하여 MOSFET 고유의 드리프트를 최소화하였다. 수소유입으로 인한 드리프트는 $Si_3N_4/SiO_2$의 이중 게이트 절연막으로 줄였고, 수소에 의한 Pd의 격자 팽창에 의해 생기는 블리스터는 Pt을 넣어서 제거하였다. Pd 박막을 수소 여과기로 사용한 Pd/Pt 게이트 MISFET 센서로 측정한 결과 $0{\sim}500\;ppm$ 사이에서 선형적인 출력 특성을 얻을 수 있었다. 30 일간 $50^{\circ}C$의 정류수 속에서 장기안정도를 측정하였다. 전체적으로 감지 FET의 게이트 전압은 35 mV 상승하였고, 기준 FET는 48 mV 상승하여 안정한 특성을 나타내었다.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.1220-1224
• /
• 2003

In this paper, we measured the radiation dose of a fuel handling machine of the CANDU type Wolsong nuclear reactor directly during operation, in spite of the high radiation level. In this paper we will describe the sensor development, measurement techniques, and results of our study. For this study, we used specially developed semiconductor sensors and matching dosimetry techniques for the mixed radiation field. MOSFET dosimeters with a thin oxide, that are tuned to a high dose, were used to measure the ionizing radiation dose. Silicon diode dosimeters with an optimum area to thickness ratio were used for the radiation damage measurements. The sensors are able to distinguish neutrons from gamma/X-rays. To measure the radiation dose, electronic sensor modules were installed on two locations of the fuel handling machine. The measurements were performed throughout one reactor maintenance cycle. The resultant annual cumulative dose of gamma/X-rays on the two spots of the fuel handling machine were 18.47 Mrad and 76.50 Mrad, and those of the neutrons were 17.51 krad and 60.67 krad. The measured radiation level is high enough to degrade certain cable insulation materials that may result in electrical insulation failure.

• 센서학회지
• /
• 제24권5호
• /
• pp.353-357
• /
• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• 센서학회지
• /
• 제1권2호
• /
• pp.131-145
• /
• 1992

본 논문은 SOI트랜스듀서 및 회로를 위해, Si 직접접합과 M-C국부연마법에 의한 박막SOI구조의 형성 공정을 기술한다. 또한, 이러한 박막SOI의 전기적 및 압저항효과 특성들을 SOI MOSFET와 cantilever빔으로 각각 조사했으며, bulk Si에 상당한다는 것이 확인되었다. 한편, SOI구조를 이용한 두 종류의 압력트랜스듀서를 제작 및 평가했다. SOI구조의 절연층을 압저항의 유전체분리층으로 이용한 압력트랜스듀서의 경우, $-20^{\circ}C$에서 $350^{\circ}C$의 온도범위에 있어서 감도 및 offset전압의 변화는 자각 -0.2% 및 +0.15%이하였다. 한편, 절연층을 etch-stop막으로 이용한 압력트랜스듀서에 있어서의 감도변화를 ${\pm}2.3%$의 표준편차 이내로 제어할 수 있다. 이러한 결과들로부터 개발된 SDB공정으로 제작된 SOI구조는 집적화마이크로트랜스듀서 및 회로개발에 많은 장점을 제공할 것이다.

• 산업기술연구
• /
• 제40권1호
• /
• pp.13-18
• /
• 2020

Lithium-ion batteries have a small volume, light weight and high energy density, maximizing the utilization of mobile devices. It is widely used for various purposes such as electric bicycles and scooters (e-Mobility), mass energy storage (ESS), and electric and hybrid vehicles. To date, lithium-ion batteries have grown to focus on increasing energy density and reducing production costs in line with the required capacity. However, the research and development level of lithium-ion batteries seems to have reached the limit in terms of energy density. In addition, the charging time is an important factor for using lithium-ion batteries. Therefore, it was urgent to develop a high-speed charger to shorten the charging time. In this thesis, a discharger was fabricated to evaluate the capacity and characteristics of Li-ion battery pack which can be used for e-mobility. To achieve this, a smart discharger is designed with a combination of active load, current sensor, and temperature sensor. To carry out this thesis, an active load switching using sensor control circuit, signal processing circuit, and FET was designed and manufactured as hardware with the characteristics of active discharger. And as software for controlling the hardware of the active discharger, a Raspberry Pi control device and a touch screen program were designed. The developed discharger is designed to change the 600W capacity battery in the form of active load.

• 센서학회지
• /
• 제4권2호
• /
• pp.7-13
• /
• 1995

MOSFET의 전장효과와 압전물질의 압전효과를 결합한 새로운 FET형 반도체압력소자(PSFET : pressure sensitive field effect transistor)를 제조하고 동작 특성을 조사하였다. PSFET의 압전박막은 RF 마그네트론 스퍼터링으로 ZnO박막을 약 $5000{\AA}$ 게이트 위에 성막하였다. ZnO 압전박막의 최적 c-축 배향분극 구조를 얻기 위한 막 제조조건은 기판온도가 $300^{\circ}C$, RF 전력이 140W, 작업 분위기압은 5mtorr였으며, 플라즈마가스는 아르곤이었다. 제조된 PSFET는 적용된 압력범위($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$)에서 비록 감도는 낮으나 비교적 안정한 동작특성을 나타내었다.

• Progress in Superconductivity
• /
• 제13권2호
• /
• pp.105-110
• /
• 2011

SQUID sensor-based ultra low-field magnetic resonance apparatus with ${\mu}T$-level measurement field requires a strong prepolarization magnetic field ($B_p$) to magnetize its sample and obtain magnetic resonance signal with a high signal-to-noise ratio. This $B_p$ needs to be ramped down very quickly so that it does not interfere with signal acquisition which must take place before the sample magnetization relaxes off. A MOSFET switch-based $B_p$ coil driver has current ramp-down time ($t_{rd}$) that increases with $B_p$ current, which makes it unsuitable for driving high-field $B_p$ coil made of superconducting material. An energy cycling-type current driver has been developed for such a coil. This driver contains a storage capacitor inside a switch in IGBT-diode bridge configuration, which can manipulate how the capacitor is connected between the $B_p$ coil and its current source. The implemented circuit with 1.2 kV-tolerant devices was capable of driving 32 A current into a thick copper-wire solenoid $B_p$ coil with a 182 mm inner diameter, 0.23 H inductance, and 5.4 mT/A magnetic field-to-current ratio. The measured trd was 7.6 ms with a 160 ${\mu}F$ storage capacitor. trd was dependent only on the inductance of the coil and the capacitance of the driver capacitor. This driver is scalable to significantly higher current of superconducting $B_p$ coils without the $t_{rd}$ becoming unacceptably long with higher $B_p$ current.