• Journal of the Korean Society of Industry Convergence
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• v.10 no.4
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• pp.227-233
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• 2007

In case of design of a rectifier to supply high current, To select switching frequency of semiconductor switches affect absolutely the design of the LC filter value in an power conversion circuit. The conventional rectifier by using MOSFET is no use in high current equipments because of small drain-source current. To solve this problem, this paper proposes to design of high capacity rectifier by parallel driving of MOSFET in the single half bridge DC-DC converter. This method can be able to develop high current rectifier by distributed drain-source current. The proposed scheme is able to expect a decrease in size, weight and cost of production by decreasing the LC filter value and increasing maximumly the switching frequency. The validity of the proposed parallel driving strategy is verified through computer-aided simulations and experimental results.

• Journal of IKEEE
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• v.22 no.2
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• pp.393-401
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• 2018

In this paper, a rectifier for WPC / A4WP wireless power transmission is designed. The proposed rectifier supports both WPC (Wireless Power Consortium) and A4WP (Alliance For Wireless Power) and is designed with full-bridge rectifier. WPC transmits power at the frequency of 100kHz to 205kHz and A4WP at the frequency of 6.75MHz. Since the bridge rectifier uses a MOSFET instead of a diode, the reverse current flows and the efficiency is affected if the output voltage is higher than the input voltage. Therefore, we added the reverse current detector that detects the current flowing through the MOSFET and shut off the reverse current. The frequency discriminator is used because the rectifier has different frequency band. The proposed rectifier was designed using $0.35{\mu}m$ CMOS high voltage process. The input voltage is up to 18V and the rectifier operates at 100kH to 205kHz, 6.78MHz frequency. The maximum efficiency is 94.8% and the maximum power transfer is 5.78W.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.166-170
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• 2003

This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver. The two transistor forward circuit is used to decrease voltage stress of primary side and the synchronous rectifier is used to reduce current stress of secondary side. Previous synchronous rectifier's MOSFET of TTFC have long dead time This paper presents synchronous rectifier of compulsory control-driver for minimized dead time. This paper compared with diode rectifier, self-driven synchronous rectifier and compulsory control-driver synchronous rectifier of TTFC. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.2
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• pp.181-184
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• 2017

This study analyzes the turn-on and turn-off transients of a metal-oxide-semiconductor field-effect transistor (MOSFET) with high-switching frequency systems. In these systems, the voltage distortion becomes serious at the output terminal of a Vienna rectifier by the turn-off delay of the MOSFET. The current has low-order harmonics through this voltage distortion. This paper describes the transient of the turn-off that causes the voltage distortion. The algorithm for reducing the sixth harmonic using a proportional-resonance controller is proposed to improve the current distortion without complex calculation for compensation. The reduction of the current distortion by high-switching frequency is verified by experiment with the 2.5-kW prototype Vienna rectifier.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.4
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• pp.361-370
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• 2006

A single-stage single-switch flyback converter with synchronous rectifier is proposed. The proposed single-stage single-switch technique meets the IEC 61000-3-2 harmonic requirements. The proposed SR is the voltage driven synchronous rectifier (VDSR) which operates depending on the voltage drop across the drain and source of the MOSFET. Experimental results for the 85W (12V /7.1A) proposed converter are shown.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2016-2019
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• 1997

To solve the low efficiency problem of low-voltage power supplies, it has been studied to replace the schottky barrier diode with the MOSFET synchronous rectifier. In this paper, Phase Shift-Controlled Clamp Mode Zero Voltage Switching-Multi Resonant Converter with Synchronous Rectifier (PSC CM ZVS-MRC with SR) is presented to achieve high efficiency in low-voltage power supplies. The characteristics analysis of synchronous rectifier is established by using the MOSFET equivalent circuit and efficiency comparison is established between the Synchronous Rectifier and the schottky barrier diode. To verify the validity of the analysis, 33W(3.3V, 10A) PSC CM ZVS-MRC with self-driven synchronous rectifier at switching frequency of 1MHz is designed and tested. And it is confirmed that the experimental results are well consistent with the theoretical results. The maximum efficiency of the converter is 83.4% at full load, which is 3.3% higher than conventional schottky diode rectification.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2568-2571
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• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.278-281
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• 2014

This paper presents the performance comparison of three types of full-wave rectifiers for vibration energy harvesting. The first rectifier is consisted of two active diodes and two MOSFETs, and the comparators of the active diodes are powered from the output of the rectifier. The second one is a 2-stage full-wave rectifier. It comprises the basic rectifier consisted of four MOSFETs and an active diode. The comparator is also powered from the output of the rectifier. The third one is an input powered rectifier. It has the same structure as the second rectifier, but the comparator is powered from the input of the rectifier. These rectifiers have been designed using a 0.35um CMOS process and their performances have been compared through simulations. In terms of efficiency, the first rectifier shows the best performance at heavy loads, but the second one is suitable at light loads. When the power consumption during absence of vibration is more important than efficiency, the input-powered rectifier is proper.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.147-148
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• 2011

In this paper, implementation of digital control for critical conduction mode power factor correction (PFC) rectifier is presented. Critical conduction mode is widely used in medium and low power conversion application due to its minimized MOSFET turn-on loss and diode reverse-recovery problem. However, it needs additional zero current detection circuit and maximum frequency limit to properly turn the MOSFET on and avoid the excessive switching loss in light load operation. This paper explains the digital IC implementation and verifies its operation with 200-W prototype PFC rectifier.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.