• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• The Journal of the Acoustical Society of Korea
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• v.41 no.3
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• pp.359-366
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• 2022

In this paper, we present the Korean menu-ordering Sentence Text-to-Speech (TTS) system using conformer-based FastSpeech2. Conformer is the convolution-augmented transformer, which was originally proposed in Speech Recognition. Combining two different structures, the Conformer extracts better local and global features. It comprises two half Feed Forward module at the front and the end, sandwiching the Multi-Head Self-Attention module and Convolution module. We introduce the Conformer in Korean TTS, as we know it works well in Korean Speech Recognition. For comparison between transformer-based TTS model and Conformer-based one, we train FastSpeech2 and Conformer-based FastSpeech2. We collected a phoneme-balanced data set and used this for training our models. This corpus comprises not only general conversation, but also menu-ordering conversation consisting mainly of loanwords. This data set is the solution to the current Korean TTS model's degradation in loanwords. As a result of generating a synthesized sound using ParallelWave Gan, the Conformer-based FastSpeech2 achieved superior performance of MOS 4.04. We confirm that the model performance improved when the same structure was changed from transformer to Conformer in the Korean TTS.

• Journal of Broadcast Engineering
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• v.11 no.1 s.30
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• pp.3-14
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• 2006

Music summarization means a technique which automatically generates the most importantand representative a part or parts ill music content. The techniques of music summarization have been studied with two categories according to summary characteristics. The first one is that the repeated part is provided as music summary and the second provides the combined segments which consist of segments with different characteristics as music summary in music content In this paper, we propose and evaluate two kinds of music summarization techniques. The algorithm using multi-level vector quantization which provides a repeated part as music summary gives fixed-length music summary is evaluated by overlapping ration between hand-made repeated parts and automatically generated summary. As results, the overlapping ratios of conventional methods are 42.2% and 47.4%, but that of proposed method with fixed-length summary is 67.1%. Optimal length music summary is evaluated by the portion of overlapping between summary and repeated part which is different length according to music content and the result shows that automatically-generated summary expresses more effective part than fixed-length summary with optimal length. The cluster-based algorithm using 2-D similarity matrix and k-means algorithm provides the combined segments as music summary. In order to evaluate this algorithm, we use MOS test consisting of two questions(How many similar segments are in summarized music? How many segments are included in same structure?) and the results show good performance.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.77-85
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• 2009

We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.43-51
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• 1992

Thin films of )$Pb(Zr, \;TiO_3$ are fabricated by MOCVD using ultrasonic spraying. The films having perovskite structure are made at low deposition temperature, $300-450^{\circ}C$. The phase and composition of the films vary with the composition of the starting solution and the deposition temperature. Dielectric constant of the films is 187 at 1MHz. Ferroelectric hysterysis loop measurements indicate a remanant polarization of $5.5{\mu}C/cm^2$, and coercive field of 65kV/cm. Resistivity of thin films is about $10^{11}{\Omega}cm$ and the breakdown electric field abort 35kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of Home Health Care Nursing
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• v.12 no.1
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• pp.41-69
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• 2005

Purpose: This study was performed to evaluate the outcomes of the home care nursing program conducted jointly by thirty two catholic churches and C hospital in Seoul. Method: The subjects included 173 patients who registered for the program during a 4 month-period from November 1, 2004 to February 28, 2005 and received home care services for more than 4 times and 32 professional nurses participating in the program. Using the concept of medical outcome study (MOS), the structure, process, outcome elements were analyzed. Result: 1) A Catholic homecare nursing center and nurses of the C hospital played a central role in providing nursing care, and each church operated its own vehicle from its own office. Home care nurse's job satisfaction was 2.8 out of total score of 4. The major illness was cerebrovascular disease including stroke followed by skeletomuscular disease including degenerative arthritis cancer, and diabetes. Among reasons for accessing the home care nursing program, hypertension management was most prevalent. More than half of the registration was done through catholic churches. Most people who referred the patient to the program was through the church. Most patients received home care nursing 1-2 times a week for 30 to 60 minutes in average and the most frequent type of service provided was basic nursing. 3) The most frequent reason for terminating home care services was death. The change in PPS(Palliative Performance Scale) level from the time of registration and after 4 visits was the same in 45%, decreased in 30%, and improved in 25%. Patient satisfaction was very high, showing 3.4 out of total score of 4. Conclusion: These results proved that the home care nursing program was highly appreciated by subjects and nurses were providing professional care. Thus the two parties involved in the program were actively supporting the program to fulfill their mission. However, several areas needed to be improved such as relating with local community, relating with family doctor, and issue of improving the working conditions for home care nurses.

• Speech Sciences
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• v.10 no.3
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• pp.241-250
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• 2003

In this paper, we implemented the vocoder of variable rate by applying the SOLA-B algorithm to the G.729A to the TMS320C5416 in real-time. This method using the SOLA-B algorithm is that it is reduced the duration of the speech in encoding and is played at the speed of normal by extending the duration of the speech in decoding. But the method applied to the existed G.729A and SOLA-B algorithm is caused the loss of speech quality in G.729A which is not reflected about length variation of speech. Therefore the proposed method is encoded according as it is modified the structure of LSP quantization table about the length of speech is reduced by using the SOLA-B algorithm. The vocoder of variable rate by applying the G.729A and SOLA-B algorithm is represented the maximum complexity of 10.2MIPS about encoder and 2.8MIPS about decoder in 8kbps transmission rate. Also it is evaluated 17.3MIPS about encoder, 9.9MIPS about decoder in 6kbps and 18.5MIPS about encoder, 11.1MIPS about decoder in 4kbps according to the transmission rate. The used memory is about program ROM 9.7kwords, table ROM 4.69kwords, RAM 5.2kwords. The waveform of output is showed by the result of C simulator and Bit Exact. Also, the result of MOS test for evaluation of speech quality of the vocoder of variable rate which is implemented in real-time, it is estimated about 3.68 in 4kbps.