• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.61-61
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.57-57
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.63-63
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.79-79
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• 2003

최근 CMOS(Complementary Metal Oxide Semiconductor) 능동소자에 사용되는 MOS-FET (Metal Oxide Semiconductror Field Effect Transitror)의 전체적인 크기 감소추세에 따라 금속 전극과 반도체 사이의 절연층 두께 감소가 요구되고 있다. 현재 보편적으로 사용되고 있는 SiO$_2$층은 두께 감소에 따른 터널링 전류의 증가로 더 이상의 두께 감소를 기대하기 어려운 상태이다. 이러한 배경에서 최근 터널링 전류를 충분히 감소시키면서 요구되는 절연특성을 얻을 수 있는 새로운 고유전 물질 (high-k dielectric material)에 대한 연구가 이루어지고 있다. 현재까지 연구되어온 고유전 물질 중, 고유전 상수, 큰 밴드갭, Si과의 열적 안정성을 갖는 물질로 ZrO$_2$가 주목을 받고 있다. 본 연구에서는 Metal Organic Molecular Beam Epitaxy (MOMBE) 방법을 이용한 ZrO$_2$ 층의 성장조건 및 특성을 평가하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.452-455
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• 2003

[ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.84-84
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.62-62
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.223-224
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• 2005

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.