• Title/Summary/Keyword: MIS 5

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Effects of the Misspecification of Cointegrating Ranks in Seasonal Models

  • Seong, Byeong-Chan;Cho, Sin-Sup;Ahn, Sung-K.;Hwang, S.Y.
    • The Korean Journal of Applied Statistics
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    • v.21 no.5
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    • pp.783-789
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    • 2008
  • We investigate the effects of the misspecification of cointegrating(CI) ranks at other frequencies on the inference of seasonal models at the frequency of interest; our study includes tests for CI ranks and estimation of CI vectors. Earlier studies focused mostly on a single frequency corresponding to one seasonal root at a time, ignoring possible cointegration at the remaining frequencies. We investigate the effects of the mis-specification, especially in finite samples, by adopting Gaussian reduced rank(GRR) estimation by Ahn and Reinsel (1994) that considers cointegration at all frequencies of seasonal unit roots simultaneously. It is observed that the identification of the seasonal CI rank at the frequency of interest is sensitive to the mis-prespecification of the CI ranks at other frequencies, mainly when the CI ranks at the remaining frequencies are underspecified.

Temperature Dependence on Electrical Characterization of Epitaxially Grown AIN film on 6H-SiC Structures (6H-SiC 위에 형성한 에피택시 AIN 박막 구조에 대한 전기적 특성의 평가온도 의존성)

  • Kim Yong-Seong;Kim Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.18-22
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    • 2006
  • Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

Electrical Characteristics of MIS Type $Pb_{1-x}Sn_xTe$ (MIS형 $Pb_{1-x}Sn_xTe$ Diode의 전기적 특성에 관한 연구)

  • Kim, Tae-Seoung;Park, Jong-Kun;Yeo, In-Seon;Lee, Jin;You, Rim
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.187-190
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    • 1987
  • This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

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Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method (반응성 RF 마그네트론 스퍼터링 법을 이용한 AIN/SiC 구조의 제작 및 특성)

  • Kim, Yong-Seong;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.977-982
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    • 2005
  • Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

Analysis of Permeation Efficiency in Soil for OPC and Non-Pollution MIS Grouts by Laboratory Model Test (실내모형시험을 통한 OPC와 친환경 MIS 그라우트의 지반 침투성능 분석)

  • Ahn, Jung-Ho;Lim, Heui-Dae;Choi, Dong-Nam;Song, Young-Su
    • Economic and Environmental Geology
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    • v.45 no.3
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    • pp.307-315
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    • 2012
  • In this paper, a laboratory model test was conducted to evaluate grouting efficiency of ordinary portland cement(OPC) and micro cement used in MIS(Micro-Injection Process System). For this research, a injection equipment was developed for pressure permeation which can evenly simulate various grouting tests in a laboratory and suggested a standard for the production of the test specimen. Using the injection device, the laboratory injection tests of grouts were prepared with water/cement ratio of 1:1, 2:1, 3:1, 4:1, and 5:1. The analysis of injection test for pressure permeation showed that the efficiency of injection increases linearly as the water/cement ratio increases. Comparison of efficiency of the injection indicates that MIS with a relatively smaller average diameter shows more efficient injection than the OPC. In the low ratio of water/cement as 2:1~1:1, the injection efficiency of OPC was especially poor. Also, a nonlinear grout volume-injection time is represented by a hyperbolic model and grout volume predicted by hyperbolic model was compared with the value measured. From the comparison, it shows that the hyperbolic model has the potential of evaluating the efficiency of grouting.

Different $CaCO_3$ profiles in cores PC1 and PC2 from the Ulleung Basin in the East Sea (동해 울릉분지에서 채취한 코아 PC1과 PC2의 탄산염 함량 변화 차이와 그 원인)

  • Lee, Jong-Min;Heo, Jin-Bee;Kim, Hyung-Jeek;Khim, Boo-Keun
    • The Korean Journal of Quaternary Research
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    • v.25 no.2
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    • pp.17-24
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    • 2011
  • We investigated the variation of $CaCO_3$ contents in cores PC1 and PC2 recovered from the continental slope area of the Ulleung Basin in the East Sea. $CaCO_3$ contents of cores PC1 and PC2 varied between 0.6 and 17.2% and between 0.3 and 43.0%, respectively. $CaCO_3$ contents in the upper part of core PC1 corresponding to MIS 1 are less than 5%, whereas those in the lower part of MIS 2 are more than 10%. Such variation of $CaCO_3$ contents in core PC1 confirms the previous results of $CaCO_3$ studies in the East Sea. In core PC2, $CaCO_3$ contents of the upper part are similar to those of core PC1. However, $CaCO_3$ contents in the lower part of core PC2 are more than 40%. According to XRD operation and SEM examination, the high $CaCO_3$ contents in the lower part of core PC2 are more attributable to the authigenic carbonate minerals rather than the biogenic carbonate composition. Such abundant authigenic carbonate minerals are closely related to the dissociation of methan hydrates which were observed in the Ulleung Basin.

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Change in Electrical Properties of Al2O3/GaN MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature (산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al2O3/GaN MIS 구조의 전기적 특성 변화)

  • Kwak, No-Won;Lee, Woo-Seok;Kim, Ka-Lam;Kim, Hyun-Jun;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.6
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    • pp.470-475
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    • 2009
  • We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

Physicochemical Characteristics and Formation Environments of the Ujeon Coastal Dune Depositsin Jeungdo (증도 우전 해안사구 퇴적층의 물리화학적 특성과 형성환경)

  • Oh, Jeong-Sik
    • Journal of The Geomorphological Association of Korea
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    • v.25 no.2
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    • pp.43-61
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    • 2018
  • Heterogeneous sedimentary deposits with different soil colors and various degree of hardness are exposed in its foredune and tidal zone due to the effects of recently accelerated coastal erosion along the Ujeon Coast in Jeung-do, Shinan-gun. This study was conducted on the assumption that these sedimentary deposits were developed in different timing and environments. Thus, we can infer the geomorphic development processes of the area based on evidences like the physicochemical characteristics of each sedimentary layer. Several analysis of these sedimentary depositssuch as grain size analysis, X-ray Fluorescence Measurement (XRF), and Loss on ignition (LOI) were performed on central (Ujeon A) and southern (Ujeon B) parts of the Ujeon Coast. I found that the foredune sedimentary deposits have four stages of geomorphic development processes. In the initial stage of development, during the peak of the Last Interglacial Period (MIS 5e), basal deposits were accumulated in the low-energy environment of subtidal zones. In the second stage, during the Last Glacial Period (MIS 4~MIS 2), eolian sedimentary layers were developed by terrestrial aeolian processes by which fine materials were transported from the Yellow Sea which became a dry land exposed by lowered sea level. In the third stage, various mechanism existed for the formation of each sedimentary layer. In the region of Ujeon A, sedimentary layers were developed in the littoral zone environment dominated by marine processes during the maximum phase of transgression in the Holocene. Meanwhile, the region of Ujeon B began to form eolian sedimentary layers during MIS 2. In the last stage, thick coastal dune deposits, covered all over the Ujeon Coast. During the late Holocene (0.7~0.6 ka), terrestrial processes kept dominating the region, developing typical eolian sedimentary layers.

Capacitive-type Hydrogen Gas Sensor Using Ta2O5 as Sensitive Layer (감지막으로 Ta2O5를 이용한 정전용량형 수소 가스센서)

  • Choi, Je-Hoon;Kim, Seong-Jeen
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.12
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    • pp.882-887
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    • 2013
  • We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd/$Ta_2O_5$/SiC structure, and a thin tantalum oxide ($Ta_2O_5$) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature as well as high permeability for hydrogen gas. In the experiment, dependence of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm was analyzed at room temperature to $500^{\circ}C$. As the result, our sensor exploiting a $Ta_2O_5$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

A Study on the Indicators of Informatization Maturity Level and Critical Success Factors in Small and Medium Manufacturers: A Case of Automotive Parts Industry (중소제조업체의 정보화 성숙도 지표 개발 및 성공요인 도출: 자동차 부품업체 사례)

  • Joo, Suk-Jung;Yoo, San-Gin;Kim, Na-Rang;Hong, Soon-Goo
    • Information Systems Review
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    • v.7 no.2
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    • pp.195-211
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    • 2005
  • The purpose of this case study is to suggest the indicators of an informatization maturity level and critical success factors in small and medium automotive parts manufacturers. To achieve this goal, literature reviews and case studies on 7 automotive parts manufacturers that confirmed to implement information systems successfully, were conducted. Based on literature review, the six functional processes including development, production scheduling, purchase, production, order, and support process, were defined. Each process has 5 levels from 1(low level) to 5(high level) depending on the degree of informatization maturity. In addition, critical success factors were discovered with interviews of CEO or CIO. The results of this study can be applied to any companies which are implementing or intended to the information systems near future.