• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.577-583
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• 2011

In AC-PDP, it is necessary to achieve high luminance efficiency, high luminance and high definition by adopting technologies such as high xenon concentration and long gap. However, it is very difficult to apply above technologies because they make many problems such as mis-discharge and high driving voltage. Especially, the reactive power of PDP must be reduced for satisfaction in international standard IEC62087. In this paper, we proposed CLHS driving method which is half sustain driver without energy recovery capacitor. In the experimental results, CLHS driving method reduced reactive power consumption about 10%. Also, CLHS driving method improved the luminance efficiency in all discharge loads. Therefor, the more the discharge load decreases, the more the luminance efficiency improves. When the discharge load is 20%, CLHS driving method improved 5.35%.

• Korean System Dynamics Review
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• v.6 no.2
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• pp.5-23
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• 2005

This paper investigates a dynamic mechanism underlying the process of knowledge creation and evolution with a focus on the SECI model(standing for Socialization, Externalization, Combination, Internalization) as proposed by Nonaka and Takeuchi(1991) and broadly accepted especially among the practitioners in knowledge management field. The SECI model provides with intuitive logic and clear delineation of knowledge types between the tacit and the explicit, and embodies an interaction dynamic. However explanations of the propelling forces for the knowledge transfer over the four quadrants of the model is yet to be made. And the transmission mechanisms are not prescribed though the model mentions knowledge is created and evolved in a spiral process. This paper, therefore attempts first to extend and elaborate it into a dynamic SECI model by identifying those propelling factors and their relationships(linkages) based on the systems thinking.

• IE interfaces
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• v.13 no.2
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• pp.273-280
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• 2000

Time-tradeoff measures and healthy years equivalents were assessed and compared through an empirical study based on Multi-attribute utility theory. The study included 33 student subjects as a pilot study, and 54 end-stage renal disease patients in Wisconsin. The two outcome measures were compared with the survival duration of 1, 5, and 10 years. The results of the study show that the time-tradeoff method and the two-stage method did not lead to the same numerical quantities, although they aim to measure the same quantities (equivalent numbers of healthy years) theoretically. The healthy years equivalents involved more inconsistencies, and were less reliable than the time-tradeoff measures. Overestimation of the healthy years equivalents was observed. This seemed to be caused by the complex procedure of the two-stage method as well as by the preferences assessment biases. Based on the study experiences, the time-tradeoff measure would be recommended for problems involving generic medical applications and health policies.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.135-136
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• 2008

이 실험에서는 비휘발성 메모리에서의 블로킹 층으로 $SiN_x$ 박막을 사용하였다. ELA (poly-Si) 기판위에 $SiO_xN_y$ 박막을 성장하기 전에 BHF를 이용해 자연 산화막을 제거하였다. 터널 층을 위해 2.7nm두께의 $SiO_xN_y$를 ICP-CVD 장비를 이용해 유리기판위에 증착하였다. 다음으로 $SiH_4/H_2$기체를 이용， ICP-CVD장비를 이용해 전하 저장을 위한 a-Si 박막을 증착하고, 마지막으로 a-Si층 위에 $SiN_x$ 층을 형성하였다. $SiN_x$ 박막을 형성하는데 최적의 조건을 찾기 위해 가스의 구성 비율 및 증착시간을 변화시키고 온도와 RF power도 바꿔주었다. 굴절률이 1.79 고 두께가 30 nm 인 $SiN_x$는 블로킹 층으로 사용하기 위한 것이다. 제작된 NSO-NVM 소자의 전기적 메모리 특성은 on current가 약 $10^{-5}$ A 이고 off current가 약 $5\times10^{-13}$ A로 전류 점멸비$(I_{ON}/I_{OFF})$는 약 $1\times10^7$ 이고 Swing 값은 0.53V/decade 이다. 1ms 동안의 programming/erasing 결과 약 3.5 V의 넓은 메모리 윈도우 크기를 가진다는 것을 확인할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.260-260
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• 2009

초박형 절연막은 현재 다양한 전자소자의 제작과 향상을 위하여 활용되고 있으며, 일반적인 화학 기상 증착 방법으로는 균일도를 확보하기 어려운 문제점을 가지고 있다. 본 논문에서는 디스플레이의 구동소자로 활용되는 박막 트랜지스터의 특성 향상과 비휘발성 메모리 소자의 터널링 박막에 응용하기 위하여 초박형 실리콘 옥시나이트라이드 박막의 증착과 이의 특성을 분석하였다. 실리콘 옥시나이트라이드 박막은 실리콘 산화막에 질소가 주입되어 있는 형태로 실리콘 산화막과 실리콘 계면상에 존재하는 질소는 터널링 전류와 결함 형성을 감소시키며, bulk 내에 존재하는 질소는 단일 실리콘 산화막에 비해 더 두꺼운 박막을 커패시턴스의 감소없이 이용할 수 있는 장점이 있다. 플라즈마 처리 기법을 이용하였을 경우에는 초박형의 균일한 박막을 얻을 수 있으며, 본 연구에서는 이산화질소 플라즈마를 이용하여 활성화된 질소 및 산소 라디칼들이 실리콘 계면을 개질하여 초박형 실리콘 옥시나이트라이드 박막을 형성활 수 있다. 플라즈마 처리 시간과 RF power의 변화에 따라 형성된 실리콘 옥시나이트라이드 박막의 두께 및 광학적 특성은 엘립소미터를 통하여 분석하였으며, 전기적인 특성은 금속-절연막-실리콘의 MIS 구조를 형성하여 커패시턴스-전압 곡선과 전류-전압 곡선을 사용하여 평가하였다. 이산화질소 플라즈마 처리 방법을 사용한 실리콘 옥시나이트라이드 박막을 log-log 스케일로 시간과 박막 두께의 함수로 전환해보면 선형적인 증가를 나타내며, 이는 초기적으로 증착률이 높고 시간이 지남에 따라 두께 증가가 포화상태에 도달함을 확인할 수 있다. 실리콘 옥시나이트라이드 박막은 초기적으로 산소의 함유량이 많은 형태의 박막으로 구성되며, 시간의 증가에 따라서 질소의 함유량이 증가하여 굴절률이 높고 더욱 치밀한 형태의 박막이 형성되었으며, 이는 시간의 증가에 따라 플라즈마 챔버 내에 존재하는 활성종들은 실리콘 박막의 개질을 통한 실리콘 옥시나이트라이드 박막의 두께 증가에 기여하기 보다는 형성된 박막의 내부적인 성분 변화에 기여하게 된다. 이산화질소 플라즈마 처리 시간의 변화에 따라 형성된 박막의 정기적인 특성의 경우, 2.3 nm 이상의 실리콘 옥시나이트라이드 박막을 가진 MIS 구조에서 accumulation과 inversion의 특성이 명확하게 나타남을 확인할 수 있다. 아산화질소 플라즈마 처리 시간이 짧은 실리콘 옥시나이트라이드 박막의 경우 전압의 변화에 따라 공핍영역에서의 기울기가 현저히 감소하며 이는 플라즈마에 의한 계면 손상으로 계면결합 전하량이 증가에 기인한 것으로 판단된다. 또한, 전류-전압 곡선을 활용하여 측정한 터널링 메카니즘은 2.3 nm 이하의 두께를 가진 실리콘 옥시나이트라이드 박막은 직접 터널링이 주도하며, 2.7 nm 이상의 두께를 가진 실리콘 옥시나이트라이드 박막은 F-N 터널링이 주도하고 있음을 확인할 수 있다. 즉, 2.5 nm 두께를 경계로 하여 실리콘 옥시나이트라이드 박막의 터널링 메카니즘이 변화함을 확인할 수 있다. 결론적으로 2.3 nm 이상의 두께를 가진 실리콘 옥시나이트라이드 박막에서 전기적인 안정성을 확보할수 있어 박막트랜지스터의 절연막으로 활용이 가능하며 2.5 nm 두께를 경계로 터널링 메커니즘이 변화하는 특성을 이용하여 비휘발성 메모리 소자 제작시 전하 주입 및 기억 유지 특성을 확보를 위한 실리콘 옥시나이트라이드 터널링 박막을 효과적으로 선택하여 활용할 수 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.378-387
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• 1994

To improve the properties of $PbTiO_3$ thin films successfully grown by thermal diffusion of 3 component layers of $Ti0_2/Pb/TiO_2(900{\AA}/900{\AA}/900{\AA})$ in preceding research, 3, 5, 7, 9, and 11 multilayer structures $(TiO_2/Pb/.../Tio_2)$ with thinner component layer of $200~300 {\AA}$ thick were deposited on Si substrate by RF sputtering, which were followed by RTA to form $PbTiO_3$ thin films. As a result, $PbTiO_3$ single phase was formed above $500^{\circ}C$. When the thickness of component layer reduced and the number of component layers increased, suppression of Pb-silicate and voids formation resulted in relatively sharp interfaces and the film composition became more homogeneous. Relative dielectric constants in MIM structure were independent of the annealing condition, but they increased with increasing thickness of the $PbTiO_3$ thin films. The maximum breakdown field in MIS structure reached 150kV/cm.

• Journal of the Korean Geographical Society
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• v.39 no.3
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• pp.425-443
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• 2004

Fluvial terraces is poorly developed along Bukhan River in Central Korea. Altitude from riverbed of T1 terraces are 18-29m, T2 terraces 2539m, respectively. Rubification index of T2 is 0.66, T1 is 0.54, and thickness of gravel weathering rind on gneiss of T2 are 14.0mm, granites of T2 are $\infty$, gneiss of T1 are 5.0mm and granites of T2 are 8.0mm, because weathering in deposits of T2 terraces, older than T1, is severer than T1 terraces. Since deposits in T2 have more active and longer weathering than T1, SiO$_2$/Al$_2$O$_3$ is 3.32 in T2 and 4.06 in T1, and SiO$_2$/R$_2$O$_3$ is 2.64 in T2 and 3.19 in T1. CIA(Chemical Index of Alteration) is 87.85％ in T2 and 85.88％ in T1. Kaolinite and halloysite are founded in deposits of T2 indicating high weathering, and are founded gibbsite made tv eluviation of kaolinite. However, deposits of T1 have no kaolinite, and are found plagioclase, weak mineral in weathering process. Comparing to previous researches by estimated age as altitude from riverbed, rubification index, thickness of gravel weathering rind, element contents and mineral composition, forming age of T2 terraces in Bukhan River are estimated in marine oxygen isotope stage 6 (130-190ka), and T1 terraces are marine oxygen isotope stage 4(59-74ka).

• Journal of Animal Science and Technology
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• v.50 no.2
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• pp.177-184
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• 2008

Acid-labile subunit(ALS) is a 85-kDa glycosylated plasma protein which forms a 150-kDa ternary complex with 7.5-kDa insulin-like growth factor(IGF) and 40~45-kDa IGF-binding protein-3. In a previous study, the present authors prepared a porcine ALS(pALS) expression construct by inserting a pALS coding sequence into a plasmid vector following synthesis of the sequence by reverse transcription-polymerase chain reaction(RT-PCR). The expression construct, however, was subsequently found to have a mis-sense mutation at two bases of the pALS coding sequence which is presumed to have occurred through a PCR error. In the present study, the correct coding sequence was synthesized by the site-directed mutagenesis and inserted into the pET-28a(+) plasmid expression vector containing the His-tag sequence flanking the last codon of the insert DNA. After induction of the expression construct in E. coli BL21(DE3) cells, the resulting presumptive recombinant peptide was purified by the Ni-affinity chromatography. Upon SDS- PAGE, the affinity-purified peptide was resolved as a single band at a 66-kDa position which is consistent with the expected molecular mass of the presumptive recombinant pALS. Collectively, results indicate that a recombinant pALS peptide was successfully expressed and purified in the present study.