• Journal of Yeungnam Medical Science
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• v.6 no.2
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• pp.63-70
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• 1989

This paper describes to design and to examine the mechanical characteristics of high frequency jet ventilator. The device consists of Phase lock loop(PLL) system, solenoid valve driving control part and Air regulating system. This study is carried out by changing several factors such as endotracheal tube(E.T. tube)diameter, injector cannula diameter, 1%, and frequency(breaths/mim.) having direct effects on the gas exchange as well as parameters of the entrained gas by venturi effects, so as to measure the tidal volume and minute volume. This system characteristics were as follows : 1) Frequency : 6-594bpm 2) Inspiration time : 1-99% 3) Variance of input air pressure : 1-30PSI.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.121-126
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• 1996

In this paper an MMIC VCO which can be used in a double conversion TV tuner is designed, fabricated and measured. The VCO is designed using the small signal method and fabricated using ETRI GaAs MMIC foundry. The 3x200$\mu$m gate width MESFET with 1$\mu$m gate length is used for an active device and MIM capacitors, spiral inductors, thin film resitors are used as passive elements. The VCO has output power of 10.95dBm at 1955 MHz with 5V bias voltage and 4V tuning voltage. The oscillation frequency change form 1947 MHz to 1964 MHz is obtaine dby an external varactor diode connected to the gate with a tuning voltage from 0 V to 6V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.245-245
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• 2008

In this work, we describe the characterization of PVP films synthesized by spin-coater method and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on Au gate electrode. We investigated the surface and electrical properties of PVP layer using an AFM method and MIM structure, and estimated the device properties of OTFTs including $I_D-V_D$, $I_D-V_G$, threshold voltage $V_T$, on/off ratio, and field effect mobility.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1562-1564
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• 1996

Langmuir-Blodgett (LB) method have been used by many rescarcher because of its facility to control the thickness of film as molecular order and orientation of molecular. We fabricated MIM device using copolymer LB films of $2C_{18}MA-VE_2$ and elecctrical conduction mechanism in ultra-thin LB film were investigated. In our experimental results, the maleate copolymer LB film have the properity of insulator like organic ultra-thin fiim. Its diclcctric constant was about 3.5 and its voltage generation about 0.1 Volt. And Schottky current was apeared as electrical conduction current and Schottky barrier was about 0.9(eV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.201-204
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• 2007

In this paper, fully embedded and miniaturized diplexer device has been developed and characterized for dual-band/mode CDMA handset applications. The size of the embedded diplexer is significantly reduced by embedding high Q circular spiral inductors and high DK MIM capacitors into a low cost organic package substrate. The fabricated diplexer has insertion losses and isolations of -0.5 and -23 dB at 824-894 MHz and -0.7 and -22 dB at 1850-1990 MHz, respectively. Its size is $3.9mm{\times}3.9mm{\times}0.77mm$. The fabricated diplexer is the smallest one which is fully embedded into a low cost organic package substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.418-420
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• 1997

We synthesized the polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. In this paper, the $\pi$-A isotherm has been investigated as to the kinds and various concentrations of the metal ions complexed with imidazole group. The experimental results for the electrical properties of MIM fabricated has been obtained as following. There is no change in limiting area as to the kinds of the metal ions, also the shift of conductivity as to the metal ions couldn't be observed, which was 10$\^$-14/[S/cm]. There are some changes in limiting area as to the concentration of the metal ions, the conductivity shift was increased with the occupied molecular area.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.172-178
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• 1997

Polyaniline(PANI)-stearic acid(SA) composite monolayer was formed at the air-water interface. The stearic acid as a surfactant was used to promote PANI monolayer formation. Uniform PANI-SA monolayer assemblies with Y type and transfer ratio of ca. 1 were fabricated using the Langmuir-Blodgett(LB) technique. The PANI-SA composite LB films with high electrical conductivity of $10^{-1}{\sim}10^{-2}S/cm$ were obtained by doping of HCl or $I_2$, and their conductivity revealed essentially close value as that of conventional PAHI-HCl complex. Especially, iodine is found to be the most promising dopant, since it gives a remarkable stability for the application as a polymer electrode in the MIM molecular device consisted of acceptor, sensitizer, and donor. The structure and physical properties of PANI-SA LB films were investigated through the near-ir UV, FT-IR, and Cyclic voltammetry.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.125-128
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• 2023

Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO₂ used as a gate oxide have occurred. In order to overcome the limitation of SiO₂, many studies have been conducted on HfO₂ that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO₂, and has an appropriate band gap. In this study, HfO₂, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO₂ thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.