• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.49-54
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• 2003

We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1128-1132
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• 2002

$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.83-89
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• 1989

Ferroelectric $PbTiO_3$ thin film is deposited with rf sputtering at substrate temperature of $100-150^{\circ}C$. It is found that this has pyrochlore structure of amorphous type by X-ray diffractive analysis. Thermal annealing has excellent characteristics at $550^{\circ}C$ and laser annealing has best crystalline structure in case of scanning with 50 watts. Interface states in MFST and MFOST structure with a $PbTiO_3$ ferroelectric thin film gate have been investigated from analysis of C-V data. The interface states density has been drastically reduced by inserting an oxide layer between ferroelectric and semiconductor. The observed effect increase feasibility of employing ferroelectric thin films such as nonvolatile memory field effect transistor, IR optical FET, and Image Devices with a ferroelectric layer.

• Ocean Systems Engineering
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• v.14 no.3
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• pp.277-299
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• 2024

In this study, the wave-induced motion responses of modular floating structures (MFS) was investigated through a series of experiments in a two-dimensional wave tank. A 1:63 scale model test was conducted using a 1-by-2 modular floating structure consisting of two modules and connectors. Two different types of connectors were considered: a pitch-free hinge and rigid connector. The numerical analysis was performed based on the higher-order boundary element method (HOBEM) and wave Green function with potential flow theory. First, the heave and pitch RAOs of the modules from the regular wave tests were directly compared with numerical analysis results. Next, the motion spectra and their statistical values from the irregular wave tests were compared with the numerical analysis results. The study revealed that the sheltering effect of the weather side module led to a reduction in motion of the lee side module. The numerical analysis showed good agreement with the experimental data, demonstrating the validity of the numerical method. Additionally, the rigid connector, which strongly constrain all six degrees of freedom, significantly reduce pitch motion, making the modules behave as a single rigid body.

• Journal of Preventive Medicine and Public Health
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• v.40 no.5
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• pp.351-362
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• 2007

Objectives: The present study was intended to assess the mental health of nurses working for university hospitals and to establish which factors determine their mental health. Methods: Self-administered questionnaires were given to 1,486 nurses employed in six participating hospitals located in Daejeon City and Chungnam Province between July 1 st and August 31st, 2006. The questionnaire items included sociodemographic, job-related, and psychosocial factors, with job stress factors (JCQ) as independent variables and indices of mental health status (PWI, SDS and MFS) as dependent variables. For statistical analysis, the Chi-square test was used for categorical variables, with hierarchical multiple regression used for determining the factors effecting mental health. The influence of psychosocial and job-related factors on mental health status was assessed by covariance structure analysis. The statistical significance was set at p<0.05. Results: The factors influencing mental health status among subject nurses included sociodemographic characteristics such as age, number of hours of sleep, number of hours of leisure, and subjective health status; job-related characteristics such as status, job satisfaction, job suitability, stresses such as demands of the job, autonomy, and coworker support; and psychosocial factors such as self-esteem, locus of control and type A behavior patterns. Psychosocial factors had the greatest impact on mental health. Covariance structure analysis determined that psychosocial factors affected job stress levels and mental health status, and that the lower job stress levels were associated with better mental health. Conclusions: Based on the study results, improvement of mental health status among nurses requires the development and application of programs to manage job stress factors and/or psychosocial factors as well as sociodemographic and job-related characteristics.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.206-211
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• 2003

Effects of substrates and buffer layer upon the formation of crystalline phases and ferroelectricity of $YMnO_3$ thin films were investigated. The hexagonal $YMnO_3$ was easily formed on Si(100) while the mixed phases, hexagonal and orthorhombic $YMnO_3$, on $Pt(111)/TiO_2/SiO_2/Si$ substrate. When the $Y_2O_3$ buffer layer of 70 nm thick was inserted between the substrates and the $YMnO_3,$ the c-axis oriented hexagonal single phase formed on both substrates, Si(100) and $Pt(111)/TiO_2/SiO_2/Si$. The leakage current density of the hexagonal $YMnO_3$ thin films was lower than that consisting of mixed phases, hexagonal and orthorhombic. Furthermore the hexagonal $YMnO_3$ with c-axis preferred orientation showed the lowest leakage current density. The remnant polarization from a P-E hysteresis curve for the $YMnO_3$ formed on Si(100) was 0.14 without buffer layer and $0.24_{mu}C/cm^2$ for that with buffer layer. For the $Pt(111)/TiO_3/SiO_3/Si$ substrates, the specimen without $Y_2O_3$buffer layer did not show the hysteresis curve, while the buffer-layered has the remnant polarization of $1.14_{mu}C/cm^2$. It was concluded that the leakage current density and the ferroelectricity for the $YMnO_3$ thin films could be controlled by varying crystalline phases and their preferred orientation which depend on the kind of substrates and whether the $Y_2O_3$buffer layer exist or not.

• Journal of Digital Convergence
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• v.16 no.9
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• pp.301-307
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• 2018

We study convergent influence on depression and its association with self-esteem, fatigue and psychosocial stress among General Hospital Administrative Staff(GHAS). The subjects were 201 randomly extracted GHAS from 9 general hospitals in J City, Data collection was carried out via a structured self-administered questionaries from Jul. 3rd, 2017 to Jul. 29th, 2017. Depression was positively correlated with three sub-domains of fatigue and psychosocial stress, and it was negatively correlated with self-esteem. With the analysis of covariance structure, depression was more influential on self-esteem than fatigue and psychosocial stress. The study found the higher fatigue and psychosocial stress, and the lower self-esteem tend to increase depression. The results indicate that the efforts, to increase self-esteem, and to decrease fatigue and psychosocial stress, are required to decrease the depression of GHAS. The results are expected to be useful for industrial health education and job management to decrease the depression of GHAS. In the following study, the analysis about convergent additional factors of influence on the depression of GHAS will be needed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2230-2240
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• 2011

This study was performed to determine the depression and its association with sleep quality, occupational stress and fatigue among small-scale manufacturing male workers. The self-administered questionnaires were given to 856 workers under 50 members of manufacturing industries during the period from April 1st to June 30th, 2010. As a results, the distribution of depression group(21 point and over at CES-D score) among all subjects were 44.3%, and it was positively correlated with occupational stress, fatigue and quality of sleep. With the analysis of covariance structure, occupational stress(KOSS) was more influential on the depression than quality of sleep and fatigue. It was found to have the inter-relational effects that the higher the occupational stress(KOSS) and fatigue(MFS), and the lower the quality of sleep, the higher the depression. Thus the effective strategy for depression reduction among workers requires the efforts to improve the work environment and job contents.