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http://dx.doi.org/10.4191/KCERS.2002.39.12.1128

Electrical Properties of ReMnO3(Re:Y, Ho, Er) Thin Film Prepared by MOCVD Method  

Kim, Eung-Soo (Department of Materials Engineering, Kyonggi University)
Chae, Jung-Hoon (Department of Materials Engineering, Kyonggi University)
Kang, Seung-Gu (Department of Materials Engineering, Kyonggi University)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.12, 2002 , pp. 1128-1132 More about this Journal
Abstract
$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.
Keywords
$ReMnO_3$; Remanent polarization; MOCVD; Leakage current density; Degree of c-axis orientation;
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Times Cited By KSCI : 1  (Citation Analysis)
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