• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.6
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• pp.526-534
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• 2011

The MFS (Mlti-Functional Structure) concept, which integrates the electronics, thermal control and structure into a single packaging system, has been developed and applied to reduce the volume and weight of the satellite. Therefore, this MFS can eliminate the bulky chassis/frames, cables and connectors of the electronic equipment. The main point of this traditional MFS is the replacement of the electrical chassis/frames with MCMs (Multi-Chip Modules) that require much costs and efforts for developing. This paper shows the new MFS concept that effectively saves the volume and weight. The structure including the thermal control and radiation shielding elements will be designed and manufactured as the rectangular grid-stiffened structure. The rectangular grid-stiffened structure is the modification of the iso-grid structure, and provides the enough spaces for putting the general PCBs without the chassis/frames.

• Journal of the Korean Chemical Society
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• v.62 no.2
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• pp.79-86
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• 2018

This study reported the adsorption of Cu(II) ions onto activated carbon prepared from Myristica Fragrans shell (MFS AC) over independent variables of contact time, activating chemical (NaOH) concentration, initial adsorbate concentration, initial pH of adsorbate solution and adsorption temperature. The MFS AC structure, morphology and total surface area were characterized by FTIR, SEM and BET techniques, respectively. The Cu(II) ions adsorption on the MFS AC (activated using 0.5 M NaOH) fitted best to Freundlich adsorption isotherm (FAI), and the FAI constant obtained was 0.845 L/g at $30^{\circ}C$ and pH 4.5. It followed the pseudo first order of adsorption kinetic (PFOAK) model, and the PFOAK based adsorption capacity was 107.65 mg/g. Thermodynamic study confirmed the Cu(II) ions adsorption should be exothermic and non-spontaneous process, physical adsorption should be taken place. The total surface area and pore volume based on BET analysis was $99.85m^2/g$ and 0.086 cc/g, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of The Korean Astronomical Society
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• v.37 no.5
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• pp.427-431
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• 2004

We use simulations of large-scale structure formation to study the build-up of magnetic fields (MFs) in the intergalactic medium. Our basic assumption is that cosmological MFs grow in a magnetohy-drodynamical (MHD) amplification process driven by structure formation out of a magnetic seed field present at high redshift. This approach is motivated by previous simulations of the MFs in galaxy clusters which, under the same hypothesis that we adopt here, succeeded in reproducing Faraday rotation measurements (RMs) in clusters of galaxies. Our ACDM initial conditions for the dark matter density fluctuations have been statistically constrained by the observed large-scale density field within a sphere of 110 Mpc around the Milky Way, based on the IRAS 1.2-Jy all-sky redshift survey. As a result, the positions and masses of prominent galaxy clusters in our simulation coincide closely with their real counterparts in the Local Universe. We find excellent agreement between RMs of our simulated galaxy clusters and observational data. The improved numerical resolution of our simulations compared to previous work also allows us to study the MF in large-scale filaments, sheets and voids. By tracing the propagation of ultra high energy (UHE) protons in the simulated MF we construct full-sky maps of expected deflection angles of protons with arrival energies $E = 10^{20}\;eV$ and $4 {\times} 10^{19}\;eV$, respectively. Accounting only for the structures within 110 Mpc, we find that strong deflections are only produced if UHE protons cross galaxy clusters. The total area on the sky covered by these structures is however very small. Over still larger distances, multiple crossings of sheets and filaments may give rise to noticeable deflections over a significant fraction of the sky; the exact amount and angular distribution depends on the model adopted for the magnetic seed field. Based on our results we argue that over a large fraction of the sky the deflections are likely to remain smaller than the present experimental angular sensitivity. Therefore, we conclude that forthcoming air shower experiments should be able to locate sources of UHE protons and shed more light on the nature of cosmological MFs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.85-86
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• 2007

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.86-89
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• 2000

The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This method yields a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total moble ionic space charge, respectively. The calculated polarization and the mobile charge density were 0.42 [$\mu$C/$\textrm{cm}^2$] and 5.5$\times$10$^{11}$ (ions/$\textrm{cm}^2$) in the SBT film of MFIS structure measured at 25$0^{\circ}C$, and 1.4 [$\mu$C/$\textrm{cm}^2$] in the LiNbO$_3$ film of MFS structure measured at 30$0^{\circ}C$, respectively.

• Animal Bioscience
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• v.34 no.11
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• pp.1849-1858
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• 2021

Objective: Tenderness is a very complex feature, and the process of its formation is very complicated and not fully understood. Its diversification is one of the most important problems of beef production, as a result beef aging is widely used to improve tenderness as it is believed to provide a homogeneous product to consumers. While few studies have evaluated the muscle structure properties in relation to tenderness from early post-mortem, there little to no information available on how the muscle nanostructure of beef carcasses changes during post-mortem ageing to determine the appropriate aging time for acceptable tenderness. Methods: Muscle nanostructure (myofibril diameter [MYD], myofibril spacing [MYS], muscle fibre diameter [MFD], muscle fibre spacing [MFS], and sarcomere length [SL]), meat tenderness and cooking loss [CL]) were measured on 20 A2 longissimus muscles of Bonsmara, Beefmaster, Hereford, and Simbra at 45_mins, 1, 3, and 7 days post-slaughter. Muscle nanostructure was measured using a scanning electron microscope, while tenderness was measured using Warner Bratzler shear force. Results: At 45 minutes post-slaughter, breed affected MYD and MYS only, while at 24_hrs it also affected MFD and MFS. On day 3 breed effected MFS and SL, while on day 7 breed effected tenderness only. As the muscles matured, both MYD and MYS decreased while CL increased, and the muscles became tender. There was no uniformity on muscle texture features (surface structure, fibre separation, muscle contraction, and relaxation) throughout the ageing period. Conclusion: Meat tenderness can be directly linked to breed related myofibril structure changes during aging in particular the MYD, spacing between myofibrils and their interaction; while the MFD, spacing between muscle fibres, SL, and CL explain the non-uniformity in beef tenderness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.195-200
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• 1998

We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.