• Title/Summary/Keyword: MEMS switch

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Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch (금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장)

  • Kang, Sung-Chan;Jang, Yeon-Su;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.58-63
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    • 2011
  • A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb

  • Kang, Sung-Chan;Moon, Sung-Soo;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.177-182
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    • 2007
  • This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

Studies on MEMS Inertial Switch Applicable to the Ignition SAU(Safe-Arm-Unit) of Propulsion System (추진기관 점화안전장치에 적용 가능한 MEMS 관성 스위치 연구)

  • Jang, Seung-Gyo;Jung, Hyung-Gyun
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2010.11a
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    • pp.126-129
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    • 2010
  • MEMS(micro electro-mechanical systems) inertial switch which is applicable to the ignition Safe-Arm- Unit of propulsion system is devised. The MEMS inertial switch is designed according to the general design procedure for conventional mechanical elements. Unlikely conventional MEMS accelerometer, threshold inertial switching mechanism is adopted which makes a MEMS element an abrupt switching in a certain acceleration level. By comparing the design data and test results of the specimen a small discrepancy in switching acceleration level is found which is presumably due to the nonlinear characteristics of the beam spring and the flexure hinge which are the main parts of the MEMS inertial switch.

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Design and Performance Analysis of Lateral Type MEMS Inertial Switch (수평 구동형 MEMS 관성 스위치 설계 및 성능해석)

  • Gim, Hakseong;Jang, Seung-gyo
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.48 no.7
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    • pp.523-528
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    • 2020
  • A lateral type MEMS inertial switch was designed on the same principle as spring-mass system. The MEMS switch is used for arming mechanism of the arm-fire device by sensing the applied acceleration. We analyzed the switching capability of the MEMS switch under various acceleration conditions via performance model. Simulation results showed that the MEMS switch works very well at 10 g when the applied acceleration slope does not exceed 10 g/msec. On the other hand, the threshold operating acceleration level simulation exceeded the requirement (10±2 g) due to the width and length of the spring by considering 10% tolerance of the design values. Design modification of doubling the width of the spring, which is difficult to reduce less than 10% tolerance in fabrication process, was proposed after confirming the simulation results comply the requirement.

Applications of MEMS-MOSFET Hybrid Switches to Power Management Circuits for Energy Harvesting Systems

  • Song, Sang-Hun;Kang, Sungmuk;Park, Kyungjin;Shin, Seunghwan;Kim, Hoseong
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.954-959
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    • 2012
  • A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

Package-Platformed Linear/Circular Polarization Reconfigurable Antenna Using an Integrated Silicon RF MEMS Switch

  • Hyeon, Ik-Jae;Jung, Tony J.;Lim, Sung-Joon;Baek, Chang-Wook
    • ETRI Journal
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    • v.33 no.5
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    • pp.802-805
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    • 2011
  • This letter presents a K-band polarization reconfigurable antenna integrated with a silicon radio frequency MEMS switch into the form of a compact package. The proposed antenna can change its state from linear polarization (LP) to circular polarization (CP) by actuating the MEMS switch, which controls the configuration of the coupling ring slot. Low-loss quartz is used for a radiating patch substrate and at the same time for a packaging lid by stacking it onto the MEMS substrate, which can increase the system integrity. The fabricated antenna shows broadband impedance matching and exhibits high axial ratios better than 15 dB in the LP and small axial ratios in the CP, with a minimum value of 0.002 dB at 20.8 GHz in the K-band.

Alleviating Deformation of MEMS Structure in Surface Micromachining (표면미세가공시 발생하는 MEMS 구조물의 변형 억제)

  • Hong Seok-Kwan;Kweon Soon-Cheol;Jeon Byung-Hee;Shin Hyung-Jae
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.8 s.185
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    • pp.163-170
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    • 2006
  • By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Using a Corrugated Bridge with HRS MEMS Package

  • Song Yo-Tak;Lee Hai-Young;Esashi Masayoshi
    • Journal of electromagnetic engineering and science
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    • v.6 no.2
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    • pp.135-145
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    • 2006
  • This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.